Complementary Metal-Oxide-Semiconductor Symmetric Current-Conveyor Transimpedance Amplifier

This paper presents a novel symmetric current-conveyor transimpedance amplifier (SCC-TIA) implemented in a 0.13-μm CMOS technology for the applications of LiDAR systems, where a modifiedcascode configuration is newly proposed for input current buffer to deliver the photo-currents to the following voltage-mode inverter TIA without signal loss. Measured results of the proposed SCC-TIA demonstrate 69-dBΩ transimpedance gain, 410-MHz bandwidth, 13-pA/sqrt (Hz) average noise current spectral density, and 20-mW power dissipation from a single 1.2-V supply. Chip core occupies the area of 280×130 μm2.

Analysis and Design of a Low Noise Shunt-Shunt CMOS Transimpedance Amplifier for 10 Gbps Optoelectronic Receivers

This article presents a complete design flow of a low noise transimpedance amplifier for 10 Gbps optoelectronic receivers. The proposed topology is based on the shunt-shunt structure with negative feedback. A set of equations was deduced from the frequency analysis and noise analysis. An optimization algorithm is proposed in order to maximize the bandwidth and improve the noise performance simultaneously. Experimental results shown a 51 dBΩ transimpedance gain, a 10.54 Ghz bandwidth and an input referred current noise equal to 6.8, the lowest one between other state-of-art designs. The circuit was manufactured in 130 nm RF CMOS technology.

RF Transimpedance Amplifier for CATV Applications over PON

In this work, we present a fully differential transimpedance amplifier (TIA) with controllable transimpedance for use in RF overlay downstream communication systems. The transimpedance amplifier has been designed in a standard 180-nm CMOS technology and it is intended for 47 MHz to 870 MHz subcarrier multiplexed RF signals. It performs a 18 dBΩ transimpedance gain control range for extended optical input range from -6 dBm up to +2 dBm.