Improving the ZT of SnTe using electronic structure engineering: unusual behavior of Bi dopant in the presence of Pb as a co-dopant

Extraordinary tuning of electronic structure of SnTe by Bi in the presence of Pb as a co-adjuvant dopant. Synergistic effect of resonance level, increase in the band gap, valence and conduction sub-bands convergence leads to enhanced TE performance.

An enhanced Seebeck coefficient and high thermoelectric performance in p-type In and Mg co-doped Sn1−xPbxTe via the co-adjuvant effect of the resonance level and heavy hole valence band

Remarkable enhancement of the Seebeck coefficient of an Sn rich Sn1−xPbxTe system due to the synergistic effect of resonance level formation and valence band convergence.

Enhancement of the thermoelectric performance of bulk SnTe alloys via the synergistic effect of band structure modification and chemical bond softening

Seebeck coefficient of SnTe is largely enhanced by large band effective mass or decrease of energy separation through synergistic effect including resonance level and band convergence.

The Tunnelling Current through Oscillating Resonance and the Sisyphus Effect

The tunnelling current through an oscillating resonance level is thoroughly investigated exactly numerically and with several approximations—analytically. It is shown that while the oscillations can increase the tunnelling current (and in several cases the increase is exponentially large), their main effect is to reduce it dramatically at certain energies. In fact, the current in the presence of the oscillations cannot increase the maximum current of the adiabatic solution. That is why, while the elevator effect does occur in this system, the Sisyphus effect is the more dominant and prominent one.