2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

A 150V novel high-voltage LDMOS in a 0.18um BCD plug-in process

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393670 ◽

2018 ◽

Author(s):

Yen-Ming Chen ◽

Chiu-Ling Lee ◽

Min-Hsuan Tsai ◽

Chiu-Te Lee ◽

Chih-Chong Wang

Keyword(s):

High Voltage

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A power inductor integration technology using a silicon interposer for DC-DC converter applications

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393674 ◽

2018 ◽

Author(s):

Yixiao Ding ◽

Xiangming Fang ◽

Yuan Gao ◽

Yuefei Cai ◽

Xing Qiu ◽

...

Keyword(s):

Integration Technology ◽

Power Inductor

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Influence of the off-state gate-source voltage on the transient drain current response of SiC MOSFETs

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393599 ◽

2018 ◽

Cited By ~ 9

Author(s):

Christian Unger ◽

Martin Pfost

Keyword(s):

Drain Current ◽

Current Response ◽

Source Voltage

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A more accurate electromagnetic modeling of WBG power modules

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393652 ◽

2018 ◽

Cited By ~ 2

Author(s):

Ivana Kovacevic-Badstubner ◽

Ulrike Grossner ◽

Daniele Romano ◽

Giulio Antonini ◽

Jonas Ekman

Keyword(s):

Electromagnetic Modeling ◽

Power Modules

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Design of LED driver ICs for high-performance miniaturized lighting systems

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393714 ◽

2018 ◽

Cited By ~ 3

Author(s):

Yuan Gao ◽

Lisong Li ◽

Philip K. T. Mok

Keyword(s):

High Performance ◽

Led Driver ◽

Lighting Systems

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Reliability investigation with accelerated body diode current stress for 3.3 kV 4H-SiC MOSFETs with various buffer epilayer thickness

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393699 ◽

2018 ◽

Cited By ~ 6

Author(s):

Yuji Ebiike ◽

Takeshi Murakami ◽

Eisuke Suekawa ◽

Shigehisa Yamamoto ◽

Hiroaki Sumitani ◽

...

Keyword(s):

Current Stress ◽

Diode Current

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Enhancement of punch-through voltage in GaN with buried p-type layer utilizing polarization-induced doping

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393644 ◽

2018 ◽

Cited By ~ 1

Author(s):

Wenshen Li ◽

Mingda Zhu ◽

Kazuki Nomoto ◽

Zongyang Hu ◽

Xiang Gao ◽

...

Keyword(s):

Type Layer ◽

P Type

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High voltage capacitive voltage conversion

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393715 ◽

2018 ◽

Cited By ~ 1

Author(s):

Randall L. Sandusky ◽

Alexander Holke

Keyword(s):

High Voltage ◽

Capacitive Voltage ◽

Voltage Conversion

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A high-voltage half-bridge gate drive circuit for GaN devices with high-speed low-power and high-noise-immunity level shifter

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393676 ◽

2018 ◽

Cited By ~ 4

Author(s):

Xin Ming ◽

Xuan Zhang ◽

Zhi-wen Zhang ◽

Xu-dong Feng ◽

Li Hu ◽

...

Keyword(s):

Low Power ◽

High Voltage ◽

High Speed ◽

Noise Immunity ◽

High Noise ◽

Level Shifter ◽

Drive Circuit

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P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393645 ◽

2018 ◽

Cited By ~ 1

Author(s):

Han Wu ◽

Asad Fayyaz ◽

Alberto Castellazzi

Keyword(s):

Short Circuit ◽

Joint Optimization ◽

Switching Performance ◽

Gan Hemt ◽

Gate Driver

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2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A 150V novel high-voltage LDMOS in a 0.18um BCD plug-in process

A power inductor integration technology using a silicon interposer for DC-DC converter applications

Influence of the off-state gate-source voltage on the transient drain current response of SiC MOSFETs

A more accurate electromagnetic modeling of WBG power modules

Design of LED driver ICs for high-performance miniaturized lighting systems

Reliability investigation with accelerated body diode current stress for 3.3 kV 4H-SiC MOSFETs with various buffer epilayer thickness

Enhancement of punch-through voltage in GaN with buried p-type layer utilizing polarization-induced doping

High voltage capacitive voltage conversion

A high-voltage half-bridge gate drive circuit for GaN devices with high-speed low-power and high-noise-immunity level shifter

P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness

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2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A 150V novel high-voltage LDMOS in a 0.18um BCD plug-in process

A power inductor integration technology using a silicon interposer for DC-DC converter applications

Influence of the off-state gate-source voltage on the transient drain current response of SiC MOSFETs

A more accurate electromagnetic modeling of WBG power modules

Design of LED driver ICs for high-performance miniaturized lighting systems

Reliability investigation with accelerated body diode current stress for 3.3 kV 4H-SiC MOSFETs with various buffer epilayer thickness

Enhancement of punch-through voltage in GaN with buried p-type layer utilizing polarization-induced doping

High voltage capacitive voltage conversion

A high-voltage half-bridge gate drive circuit for GaN devices with high-speed low-power and high-noise-immunity level shifter

P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Latest Publications