Effect of Light on the Threshold Switching Voltage in Amorphous Thin Films

1985 ◽  
pp. 889-892
Author(s):  
Chun Chiang
Keyword(s):  
Thin Films ◽  
Switching Voltage ◽  
Amorphous Thin Films ◽  
Threshold Switching ◽  
Effect Of Light

The reason for the increased threshold switching voltage of SiO2 doped Ge2Sb2Te5 thin films for phase change random access memory

2009 ◽  
Vol 95 (11) ◽  
pp. 112110 ◽  
Author(s):  
Seung Wook Ryu ◽  
Jong Ho Lee ◽  
Young Bae Ahn ◽  
Choon Hwan Kim ◽  
Bong Seob Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Switching Voltage ◽  
Access Memory ◽  
Threshold Switching

Structure of pulsed-laser deposited arsenic-rich As–S amorphous thin films, and effect of light and temperature

2005 ◽  
Vol 351 (43-45) ◽  
pp. 3497-3502 ◽  
Author(s):  
P. Němec ◽  
J. Jedelský ◽  
M. Frumar ◽  
Z. Černošek ◽  
M. Vlček
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Amorphous Thin Films ◽  
Effect Of Light

scholarly journals Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2

2021 ◽  
Vol 9 (1) ◽  
pp. 117-126
Author(s):  
Jonas Keukelier ◽  
Karl Opsomer ◽  
Thomas Nuytten ◽  
Stefanie Sergeant ◽  
Wouter Devulder ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Electrical Behaviour ◽  
Electrical Measurements ◽  
Threshold Switching ◽  
Switching Behaviour

Raman spectroscopy and electrical measurements are performed on sputtered GexSe1−x thin films to identify and link bond presence to electrical behaviour.

Irradiation Effect on Al-Dispersed Amorphous Silicon Thin Films by Femtosecond Laser

2020 ◽  
Vol 984 ◽  
pp. 91-96
Author(s):  
Cheng Liu ◽  
Yu Hao Song ◽  
Dong Yang Li ◽  
Wei Li
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Laser Raman Spectroscopy ◽  
Irradiation Effect ◽  
Amorphous Thin Films ◽  
Laser Raman ◽  
Silicon Thin Films ◽  
Al Nanoparticles ◽  
Spot Area ◽  
Fs Laser

The structural and optical properties of amorphous silicon (a-Si) and Al-dispersed amorphous silicon (a-Si:Al) thin films irradiated by femtosecond (fs) laser at various energy densities are investigated comparatively in this article. It is found that there is an uneven crystallization in both amorphous thin films by means of optical microscopy and laser Raman spectroscopy respectively. The crystallization in each pulse spot area is gradually weakened from the center to the edge along with the energy dispersion of laser irradiation. The laser induced crystallization in a-Si thin films begins early and develops more extensively compared to that in a-Si:Al thin films, and Al nanoparticles inhibit somehow the crystallization of a-Si in a-Si:Al thin films.

Pyroelectricity in Highly Stressed Quasi-Amorphous Thin Films

2003 ◽  
Vol 15 (21) ◽  
pp. 1826-1828 ◽  
Author(s):  
V. Lyahovitskaya ◽  
I. Zon ◽  
Y. Feldman ◽  
S.R. Cohen ◽  
A.K. Tagantsev ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Thin Films

Comparative study of electron- and photo-induced structural transformations on the surface of As35S65 amorphous thin films

2008 ◽  
Vol 516 (21) ◽  
pp. 7511-7518 ◽  
Author(s):  
A. Kovalskiy ◽  
J.R. Neilson ◽  
A.C. Miller ◽  
F.C. Miller ◽  
M. Vlcek ◽  
...  
Keyword(s):  
Thin Films ◽  
Comparative Study ◽  
Structural Transformations ◽  
Amorphous Thin Films
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