scholarly journals Analytical model for the depth progress of percussion drilling with ultrashort laser pulses

2021 ◽  
Vol 127 (5) ◽  
Author(s):  
Daniel Holder ◽  
Rudolf Weber ◽  
Thomas Graf ◽  
Volkher Onuseit ◽  
David Brinkmeier ◽  
...  

AbstractA simplified analytical model is presented that predicts the depth progress during and the final hole depth obtained by laser percussion drilling in metals with ultrashort laser pulses. The model is based on the assumption that drilled microholes exhibit a conical shape and that the absorbed fluence linearly increases with the depth of the hole. The depth progress is calculated recursively based on the depth changes induced by the successive pulses. The experimental validation confirms the model and its assumptions for percussion drilling in stainless steel with picosecond pulses and different pulse energies.

2021 ◽  
Vol 127 (12) ◽  
Author(s):  
Daniel Holder ◽  
Rudolf Weber ◽  
Thomas Graf ◽  
Volkher Onuseit ◽  
David Brinkmeier ◽  
...  

2021 ◽  
Vol 127 (9) ◽  
Author(s):  
A. Feuer ◽  
R. Weber ◽  
R. Feuer ◽  
D. Brinkmeier ◽  
T. Graf

AbstractThe influence of the laser fluence on the quality of percussion-drilled holes was investigated both experimentally and by an analytical model. The study reveals that the edge quality of the drilled microholes depends on the laser fluence reaching the rear exit of the hole and changes with the number of pulses applied after breakthrough. The minimum fluence that must reach the hole’s exit in order to obtain high-quality microholes in stainless steel was experimentally found to be 2.8 times the ablation threshold.


2014 ◽  
Author(s):  
Jan-Philipp Negel ◽  
Andreas Voss ◽  
Marwan Abdou Ahmed ◽  
Dominik Bauer ◽  
Dirk Sutter ◽  
...  

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 891 ◽  
Author(s):  
Nursidik Yulianto ◽  
Steffen Bornemann ◽  
Lars Daul ◽  
Christoph Margenfeld ◽  
Irene Manglano Clavero ◽  
...  

Transferable substrate-less InGaN/GaN light-emitting diode (LED) chips have successfully been fabricated in a laser lift-off (LLO) process employing high power ultrashort laser pulses with a wavelength of 520 nm. The irradiation of the sample was conducted in two sequential steps involving high and low pulse energies from the backside of the sapphire substrate, which led to self-detachment of the GaN stack layer without any additional tape release procedure. To guarantee their optoelectrical function and surface quality, the lifted LED chips were assessed in scanning electron microscopy (SEM) and electroluminescence (EL) measurements. Moreover, surface characterizations were done using atomic force microscopy (AFM) and Auger Electron Spectroscopy (AES).


Author(s):  
Isamu Miyamoto ◽  
Kristian Cvecek ◽  
Yasuhiro Okamoto ◽  
Michael Schmidt ◽  
Henry Helvajian

Author(s):  
Marcelo Bertolete Carneiro ◽  
Patrícia Alves Barbosa ◽  
Ricardo Samad ◽  
NIlson Vieira ◽  
Wagner de Rossi ◽  
...  

Author(s):  
V. Pouget ◽  
E. Faraud ◽  
K. Shao ◽  
S. Jonathas ◽  
D. Horain ◽  
...  

Abstract This paper presents the use of pulsed laser stimulation with picosecond and femtosecond laser pulses. We first discuss the resolution improvement that can be expected when using ultrashort laser pulses. Two case studies are then presented to illustrate the possibilities of the pulsed laser photoelectric stimulation in picosecond single-photon and femtosecond two-photon modes.


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