Misorientation Characteristics at the Growth Front of Abnormally-Growing Goss Grains in Fe–3%Si Steel

2020 ◽  
Author(s):  
Tae-Young Kim ◽  
Tae-Wook Na ◽  
Hyung-Seok Shim ◽  
Yong-Keun Ahn ◽  
Yong-Kwon Jeong ◽  
...  
Keyword(s):  
Growth Front

Montmorillonite Dendrites

1974 ◽  
Vol 32 ◽  
pp. 454-455
Author(s):  
Necip Güven ◽  
Rodney W. Pease
Keyword(s):  
Crystal Growth ◽  
Growth Mechanism ◽  
Growth Front ◽  
Morphological Features ◽  
Dendritic Crystal ◽  
Crystal Growth Mechanism

Morphological features of montmorillonite aggregates in a large number of samples suggest that they may be formed by a dendritic crystal growth mechanism (i.e., tree-like growth by branching of a growth front).

COLONY OF THE FUNGUS Aspergillus oryzae AND SELF-AFFINE FRACTAL GEOMETRY OF GROWTH FRONTS

Fractals ◽  
1993 ◽  
Vol 01 (01) ◽  
pp. 11-19 ◽  
Author(s):  
SHU MATSUURA ◽  
SASUKE MIYAZIMA
Keyword(s):  
Aspergillus Oryzae ◽  
Environmental Conditions ◽  
Fractal Geometry ◽  
Nutrient Concentration ◽  
Incubation Temperature ◽  
Characteristic Exponent ◽  
Growth Front ◽  
Favorable Condition ◽  
The Self ◽  
The Mean

A variety of colony shapes of the fungus Aspergillus oryzae under varying environmental conditions such as the nutrient concentration, medium stiffness and incubation temperature are obtained, ranging from a homogeneous Eden-like to a ramified DLA-like pattern. The roughness σ(l, h) of the growth front of the band-shaped colony, where h is the mean front height within l of the horizontal range, satisfies the self-affine fractal relation under favorable environmental conditions. In the most favorable condition of our experiments, its characteristic exponent is found to be a little larger than that of the 2-dimensional Eden model.

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

The Interfacial Diffusion Zone in Magnetron Sputtered Ni-Ti Thin Films Deposited on Different Si Substrates Studied by HR-TEM

2008 ◽  
Vol 587-588 ◽  
pp. 820-823 ◽  
Author(s):  
Rui M.S. Martins ◽  
Manfred Beckers ◽  
A. Mücklich ◽  
Norbert Schell ◽  
Rui Jorge C. Silva ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Front ◽  
Interfacial Structure ◽  
Interfacial Diffusion ◽  
Tem Analysis ◽  
Si Substrates ◽  
Microelectromechanical Devices ◽  
Preferential Diffusion ◽  
High Resolution Tem ◽  
Columnar Grains

Ni-Ti Shape Memory Alloy thin films are suitable materials for microelectromechanical devices. During the deposition of Ni-Ti thin films on Si substrates, there exist interfacial diffusion and chemical interactions at the interface due to the high temperature processing necessary to crystallize the film. For the present study, Ni-Ti thin films were prepared by magnetron cosputtering from Ni-Ti and Ti targets in a specially designed chamber mounted on the 6-circle goniometer of the ROssendorf BeamLine (ROBL-CRG) at ESRF, Grenoble (France). The objective of this study has been to investigate the interfacial structure resulting from depositions (at a temperature of ≈ 470°C) on different substrates: naturally oxidized Si(100), Si(111) and poly-Si substrates. A detailed High-Resolution TEM analysis of the interfacial structure has been performed. When Ni-Ti is deposited on Si(100) substrate, a considerable diffusion of Ni into the substrate takes place, resulting in the growth of semi-octaeder A-NiSi2 silicide. In the case of Ni-Ti deposited on Si(111), there appears an uniform thickness plate, due to the alignment between substrate orientation and the [111]-growth front. For Ni-Ti deposited on poly-Si, the diffusion is inhomogeneous. Preferential diffusion is found along the columnar grains of poly-Si, which are favourably aligned for Ni diffusion. These results show that for the Ni-Ti/Si system, the morphology of the diffusion interface is strongly dependent on the type of substrates.

Expression of senescence in Neurospora intermedia

1986 ◽  
Vol 28 (3) ◽  
pp. 459-467 ◽  
Author(s):  
A. J. F. Griffiths ◽  
S. Kraus ◽  
H. Bertrand
Keyword(s):  
Mitochondrial Dna ◽  
Genetic Factors ◽  
Growth Arrest ◽  
Growth Front ◽  
Continuous Growth ◽  
Quiescent Cells ◽  
Neurospora Intermedia ◽  
Aerial Hyphae ◽  
Similar Basis ◽  
Transfer Interval

Kalilo cytoplasms of Neurospora intermedia have been shown to express senescence in two ways. First, by the previously reported way of death in a subculture series, and second, as reported here, by growth cessation in a 50-cm race tube. Only those cultures that are sufficiently far advanced in the development of senescence will stop growth in the length of a race tube. Resumption of growth occurs in most cases of growth arrest in race tubes. Although in subculture series growth resumption is rare, there is probably a similar basis: mitochondrial DNA (mtDNA) studies on one such case showed that growth resumption is associated with a resurgence of normal mtDNA and a decline of abnormal genomes. When senescent cultures in race tubes were sampled by removing mycelial cores, longer grown cultures were shown to be able to support less growth than younger cultures of the same genotype, and the growth front was generally able to support less growth than other regions. Therefore senescence in both transfer series and in race tubes involves the accumulation of genetic factors unable to suppport continuous growth. The expression of senescence is considered to be more efficient in subculture series than in race tubes. In such series, conidia or aerial hyphae work equally well as transfer inocula, but 1-mm hyphal tips cut from growing mycelium do not promote senescence when used as inocula. Furthermore, varying the transfer interval does not affect senescence. It is concluded that there is some feature of the development or germination of quiescent cells that enhances the expression of senescence in Neurospora.Key words: Neurospora, senescence, mitochondria, growth.

Growth-front hopping via stress-induced nucleation illustrated for the crystallization of Ba1-xSrxZn2Si2O7 from a glass in the BaO-SrO-ZnO-SiO2 system

2018 ◽  
Vol 44 (16) ◽  
pp. 19970-19980
Author(s):  
Katrin Thieme ◽  
Tilman Zscheckel ◽  
Christian Thieme ◽  
Michael Kracker ◽  
Christian Rüssel ◽  
...  
Keyword(s):  
Growth Front ◽  
Sio2 System

Monolayer Growth Front of Precious Metals through Insulating Mesoporous Membranes

2017 ◽  
Vol 9 (36) ◽  
pp. 30964-30968 ◽  
Author(s):  
Nicholas Linck ◽  
Alex Peek ◽  
Bruce J. Hinds
Keyword(s):  
Precious Metals ◽  
Growth Front ◽  
Monolayer Growth ◽  
Mesoporous Membranes

Observation of Growth Front on the Initial Stage of Goss Abnormally-Growing Grain in Fe-3%Si Steel

2013 ◽  
Vol 753 ◽  
pp. 307-310
Author(s):  
Kyung Jun Ko ◽  
Jong Tae Park ◽  
Chan Hee Han
Keyword(s):  
Solid State ◽  
Grain Boundary ◽  
Three Dimensional ◽  
Secondary Recrystallization ◽  
Growth Front ◽  
Very High Frequency ◽  
Grain Boundary Mobility ◽  
Initial Stage ◽  
The Matrix

During abnormal grain growth, a few Goss grains grow exclusively fast and consume the matrix grains. The Goss abnormally-growing grain (AGG) has peculiar features which are irregular grain boundaries and very high frequency of peninsular grains nearby the growth front of AGG and island grains trapped inside AGG. These features might provide a clue for clarifying the mechanism of Goss AGG. The experimentally-observed microstructural feature and grain boundary characterization of Goss were approached by the solid-state wetting mechanism. In this study, observing the three-dimensional wetting morphology in serial section images of Goss AGG by EBSD, we report some direct microstrucrual evidence supporting solid-state wetting mechanism for Goss AGG. The solid-state wetting mechanism for the evolution of the Goss AGG in Fe-3%Si steel explains the microstructural features evolved during secondary recrystallization, which cannot be approached by the conventional theories based on the grain boundary mobility.

scholarly journals Collision patterns on mollusc shells

1997 ◽  
Vol 1 (1) ◽  
pp. 57-76 ◽  
Author(s):  
P. J. Plath ◽  
J. K. Plath ◽  
J. Schwietering
Keyword(s):  
Reaction Diffusion ◽  
Growth Front ◽  
Cell System ◽  
One Dimensional ◽  
Reaction Diffusion Systems ◽  
Diffusion Systems ◽  
Different Types ◽  
Classical Waves ◽  
Cellular Behaviour ◽  
Mollusc Shells

On mollusc shells one can find famous patterns. Some of them show a great resemblance to the soliton patterns in one-dimensional systems. Other look like Sierpinsky triangles or exhibit very irregular patterns. Meinhardt has shown that those patterns can be well described by reaction–diffusion systems [1]. However, such a description neglects the discrete character of the cell system at the growth front of the mollusc shell.We have therefore developed a one-dimensional cellular vector automaton model which takes into account the cellular behaviour of the system [2]. The state of the mathematical cell is defined by a vector with two components. We looked for the most simple transformation rules in order to develop quite different types of waves: classical waves, chemical waves and different types of solitons. Our attention was focussed on the properties of the system created through the collision of two waves.

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