Determination of the composition of sputtered silcon oxynitride films by Auger electron spectroscopy and Rutherford backscattering spectrometry

1988 ◽  
Vol 167 (1-2) ◽  
pp. L1-L6 ◽  
Author(s):  
Herwig Reinhardt ◽  
Dirk Schalch ◽  
Arthur Scharmann
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering

Influence of Oxygen on the Iridium Silicide Formation by Rapid Thermal Annealing

1994 ◽  
Vol 299 ◽  
Author(s):  
M. Fernandez ◽  
T. Rodriguez ◽  
A. Almendra ◽  
J. Jimenez-Leube ◽  
H. Wolters
Keyword(s):  
Auger Electron Spectroscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Oxygen Effect ◽  
Silicide Formation

AbstractIridium silicide formation by rapid thermal annealing (RTA) in an Ar atmosphere or under vacuum has been investigated. The evolution of the silicide front and the identification of the phases were monitored by Auger Electron Spectroscopy (AES) and Rutherford Backscattering Spectrometry (RBS). Oxygen was incorporated during the RTA process in an Ar atmosphere. The oxygen effect is to slow down the silicide formation and eventually to stop it. In all the cases, the oxygen piled-up at the iridium-iridium silicide interface. No distinguishable phase was formed by RTA in an Ar atmosphere. No oxygen contarsi'nation was detected when the RTA was performed under a vacuum lower than 2×10−5 Torr. In this case Ir1Si1 and Ir1Si1.75 phases were formed.

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