Micro-Raman characterization of stress distribution within free standing mono- and poly-crystalline silicon membranes

1998 ◽  
Vol 41-42 ◽  
pp. 469-472 ◽  
Author(s):  
M. Siakavellas ◽  
E. Anastassakis ◽  
G. Kaltsas ◽  
A.G. Nassiopoulos
Keyword(s):  
Stress Distribution ◽  
Crystalline Silicon ◽  
Free Standing ◽  
Silicon Membranes ◽  
Raman Characterization

Preparation and characterization of ultrathin crystalline silicon membranes

1994 ◽  
Vol 42 (1-3) ◽  
pp. 689-694 ◽  
Author(s):  
B. Schmidt ◽  
J. von Borany ◽  
U. Todt ◽  
A. Erlebach
Keyword(s):  
Crystalline Silicon ◽  
Silicon Membranes

Raman Stress Characterization of Hetero-Epitaxial 3C-SiC Free Standing Structures

2011 ◽  
Vol 679-680 ◽  
pp. 141-144 ◽  
Author(s):  
Nicolò Piluso ◽  
Massimo Camarda ◽  
Ruggero Anzalone ◽  
Andrea Severino ◽  
Antonino La Magna ◽  
...  
Keyword(s):  
Stress Distribution ◽  
Stress Tensor ◽  
Raman Microscopy ◽  
Raman Frequency ◽  
Raman Shift ◽  
Experimental Measurements ◽  
Free Standing ◽  
Fem Simulations ◽  
Stress Relation

Raman microscopy has been used to study the stress distribution on 3C-SiC/Si(100) micro-machined free standing structures. Linear scans along different structures reveal similar trends of the TO mode Raman Shift. We have found that, independently of the microstructure considered, the Raman frequency decreases close to the undercut. We compare our experimental measurements with FEM simulations finding that, close to the undercut, the stress tensor becomes non-diagonal, modifying the Raman shift to stress relation.

Steam thermal SiO2: Preparation and Raman characterization of free‐standing films

1980 ◽  
Vol 37 (8) ◽  
pp. 712-714 ◽  
Author(s):  
J. C. Mikkelsen ◽  
F. L. Galeener
Keyword(s):  
Free Standing ◽  
Raman Characterization

scholarly journals Ultra-thin free-standing single crystalline silicon membranes with strain control

2013 ◽  
Vol 102 (19) ◽  
pp. 192108 ◽  
Author(s):  
A. Shchepetov ◽  
M. Prunnila ◽  
F. Alzina ◽  
L. Schneider ◽  
J. Cuffe ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Free Standing ◽  
Strain Control ◽  
Single Crystalline ◽  
Silicon Membranes

Analysis of an Anomalous CMOS Transistor Exhibiting Drain to Source Leakage—Its Model and Cause

2014 ◽  
Author(s):  
Yuk L. Tsang ◽  
Alex VanVianen ◽  
Xiang D. Wang ◽  
N. David Theodore
Keyword(s):  
Threshold Voltage ◽  
Crystalline Silicon ◽  
Electrical Characterization ◽  
Visual Defect ◽  
Scanning Capacitance Microscopy ◽  
Device Model ◽  
Graphical Simulation ◽  
Cmos Transistor

Abstract In this paper, we report a device model that has successfully described the characteristics of an anomalous CMOS NFET and led to the identification of a non-visual defect. The model was based on detailed electrical characterization of a transistor exhibiting a threshold voltage (Vt) of about 120mv lower than normal and also exhibiting source to drain leakage. Using a simple graphical simulation, we predicted that the anomalous device was a transistor in parallel with a resistor. It was proposed that the resistor was due to a counter doping defect. This was confirmed using Scanning Capacitance Microscopy (SCM). The dopant defect was shown by TEM imaging to be caused by a crystalline silicon dislocation.

Raman characterization of phonon confinement and strain effects from latent ion tracks in α‐quartz

2021 ◽  
Author(s):  
Maria C. Garcia Toro ◽  
Miguel L. Crespillo ◽  
Jose Olivares ◽  
Joseph T. Graham
Keyword(s):  
Phonon Confinement ◽  
Strain Effects ◽  
Ion Tracks ◽  
Raman Characterization

Mechanics of free-standing inorganic and molecular 2D materials

Nanoscale ◽  
2021 ◽  
Author(s):  
Xianghui Zhang ◽  
Andre Beyer
Keyword(s):  
Recent Progress ◽  
Mechanical Characterization ◽  
2D Materials ◽  
Two Dimensional ◽  
Free Standing ◽  
Inorganic As

The discovery of graphene has triggered a great interest in inorganic as well as molecular two-dimensional (2D) materials. In this review, we summarize recent progress in the mechanical characterization of...

scholarly journals Synthesis and Magnetic Characterization of Graphite-Coated Iron Nanoparticles

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
A. M. Espinoza-Rivas ◽  
M. A. Pérez-Guzmán ◽  
R. Ortega-Amaya ◽  
J. Santoyo-Salazar ◽  
C. D. Gutiérrez-Lazos ◽  
...  
Keyword(s):  
Magnetite Nanoparticles ◽  
Iron Nanoparticles ◽  
Vapour Deposition ◽  
Magnetic Measurements ◽  
Chemical Vapour ◽  
Hydrogen Atmosphere ◽  
Iron Core ◽  
Carbon Excess ◽  
Raman Characterization

Graphite-coated iron nanoparticles were prepared from magnetite nanoparticles by chemical vapour deposition (CVD) under methane and hydrogen atmosphere. After being purified from carbon excess, graphite-coated iron nanoparticles were tested for morphological and magnetic properties. It was found that, during the thermal process, magnetite nanoparticles 6 nm in size coalesce and transform into graphite-coated iron 200 nm in size, as revealed by scanning electron microscopy (SEM). Raman characterization assessed that high-quality graphite coats the iron core. Magnetic measurements revealed the phase change (magnetite to iron) as an increase in the saturation magnetization from 50 to 165 emu/g after the CVD process.

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