scholarly journals Ultrasmall Single-Crystal Indium Antimonide Nanowires

2010 ◽  
Vol 10 (10) ◽  
pp. 4669-4669 ◽  
Author(s):  
Xunyu Yang ◽  
Gongming Wang ◽  
Peter Slattery ◽  
Jin Z. Zhang ◽  
Yat Li
Keyword(s):  
Single Crystal ◽  
Indium Antimonide

Etch Pitting on Single‐Crystal Indium Antimonide

1958 ◽  
Vol 29 (8) ◽  
pp. 1261-1261 ◽  
Author(s):  
R. E. Maringer
Keyword(s):  
Single Crystal ◽  
Indium Antimonide

scholarly journals Study of the influence of treatment on the strength of undoped indium antimonide single-crystal plates

2021 ◽  
Vol 24 (1) ◽  
pp. 48-56
Author(s):  
S. S. Kormilitsina ◽  
E. V. Molodtsova ◽  
S. N. Knyzev ◽  
R. Yu. Kozlov ◽  
D. A. Zavrazhin ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Indium Antimonide ◽  
Crystallographic Orientation ◽  
Mechanical Damage ◽  
Thin Plates ◽  
Transverse Bending ◽  
Plane Transverse ◽  
Processing Steps ◽  
Processing Cycle

The method of plane-transverse bending was used to measure the strength of thin single-crystal plates of undoped InSb with a crystallographic orientation of (100). It was found that the strength of the plates (thickness ≤ 800 μm) depends on their processing. Using a full processing cycle (grinding and chemical polishing) allows to increase the strength of InSb plates by 2 times (from 3.0 to 6.4 kg/mm2). It is shown that the dependence of strength on processing for wafers with (100) orientation is similar to this dependence for wafers (111), while the strength of wafers (111) is 2 times higher. The contact profilometry method was used to measure the roughness of thin plates, which also passed successive processing steps. It was found that during a full cycle of processing, the roughness of InSb plates decreases (Ra from 0.6 to 0.04 μm), leading to a general smoothing of the surface roughness. The strength and roughness of the (100) InSb and GaAs wafers are compared. It was found that the strength of GaAs cut wafers is 2 times higher than the strength of InSb cut wafers and slightly increases after a full cycle of their processing. It was shown that the roughness of GaAs and InSb plates after a full cycle of surface treatment is significantly reduced: 10 times for InSb due to overall surface leveling and 3 times for GaAs (Rz from 2.4 to 0.8 μm) due to a decrease in the peak component. Conducting a full cycle of processing InSb plates can increase their strength by removing broken layers by sequential operations and reducing the risk of mechanical damage.

A systematic study of zone refining of single crystal indium antimonide

1966 ◽  
Vol 1 (1) ◽  
pp. 14-28 ◽  
Author(s):  
A. R. Murray ◽  
J. A. Baldrey ◽  
J. B. Mullin ◽  
O. Jones
Keyword(s):  
Single Crystal ◽  
Systematic Study ◽  
Indium Antimonide ◽  
Zone Refining

MAGNETORESISTANCE AND HALL EFFECT IN ORIENTED SINGLE CRYSTAL SAMPLES OF n-TYPE INDIUM ANTIMONIDE

1961 ◽  
Vol 39 (3) ◽  
pp. 452-467 ◽  
Author(s):  
C. H. Champness
Keyword(s):  
Magnetic Field ◽  
Field Strength ◽  
Single Crystal ◽  
Hall Effect ◽  
Air Temperature ◽  
Indium Antimonide ◽  
Room Temperature ◽  
Magneto Resistance ◽  
Longitudinal Magnetoresistance ◽  
Oriented Single Crystal

Measurements have been made on the angular dependence of the magneto-resistance effect and the Hall effect on oriented n-type indium antimonide samples. The measurements were taken at room temperature and liquid air temperature using a magnetic field strength of about 5000 gauss. Besides evidence of inhomogeneity, the results show directional dependence of the longitudinal magnetoresistance. The largest value was found in the [Formula: see text] direction. This can be explained if, in addition to electrons at the central minimum, there is some filling of the [Formula: see text] minima in k space.

scholarly journals Effect of mechanical treatment type on the strength of undoped single crystal indium antimonide wafers

2020 ◽  
Vol 6 (4) ◽  
pp. 147-153
Author(s):  
Svetlana S. Kormilitsina ◽  
Elena V. Molodtsova ◽  
Stanislav N. Knyzev ◽  
Roman Yu. Kozlov ◽  
Dmitry A. Zavrazhin ◽  
...  
Keyword(s):  
Single Crystal ◽  
Indium Antimonide ◽  
Mechanical Treatment ◽  
Treatment Cycle ◽  
Mechanical Damage ◽  
Damage Development ◽  
Transverse Bending ◽  
General Surface ◽  
Treatment Type ◽  
Strength Dependence

Thin (100) wafers of single crystal undoped InSb have been strength tested by plane transverse bending. The strength of the wafers (≤ 800 mm in thickness) has been shown to depend on their mechanical treatment type. If the full mechanical treatment cycle is used (grinding + chemical polishing) the strength of the InSb wafers increases twofold (from 3.0 to 6.4 kg/mm2). We show that the strength dependence on mechanical treatment type for (100) wafers is similar to that for (111) wafers, the strength of (111) wafers being 2 times higher. The roughness of the thin wafers after the full mechanical treatment cycle has been measured using contact profilometry. After the full mechanical treatment cycle the roughness of the InSb wafers Ra decreases from 0.6 to 0.04 mm leading to general surface smoothening. We have compared the strength and roughness between (100) InSb and GaAs wafers. The roughness of InSb and GaAs wafers after the full mechanical treatment cycle decreases significantly: by 10 times for InSb due to the general surface smoothening and by 3 times for GaAs (Rz from 2.4 to 0.8 mm) due to a reduction of the peak roughness component. The full mechanical treatment cycle increases the strength of InSb wafers by removing damaged layers through the sequence of operations and reducing the risk of mechanical damage development.

Ultrasmall Single-Crystal Indium Antimonide Nanowires

2010 ◽  
Vol 10 (6) ◽  
pp. 2479-2482 ◽  
Author(s):  
Xunyu Yang ◽  
Gongming Wang ◽  
Peter Slattery ◽  
Jin Z. Zhang ◽  
Yat Li
Keyword(s):  
Single Crystal ◽  
Indium Antimonide

Single Crystal Charge Density Studies of Thermoelectric Material Indium Antimonide

2011 ◽  
Vol 66 (8-9) ◽  
pp. 562-568 ◽  
Author(s):  
Charles Robert Muthaian ◽  
Bandarinathan Subha ◽  
Ramachandran Saravanan
Keyword(s):  
Single Crystal ◽  
Charge Density ◽  
Thermoelectric Material ◽  
Indium Antimonide ◽  
Maximum Entropy Method ◽  
Entropy Method ◽  
Covalent Character ◽  
X Ray ◽  
Density Analysis ◽  
Experimental Electron Density

Abstract density distribution using the single crystal X-ray intensity data. The charge density of this material has been studied including and excluding the quasi-forbidden h+k +l = 4n+2 type reflections using the maximum entropy method (MEM). Both the pictorial and numerical results of the experimental electron density show mixed ionic and covalent character in InSb. The use of InSb as a thermoelectric material is supported through charge density analysis.

A Preparation of High Resolution Standards for Electron Microscopy. Part II

1971 ◽  
Vol 29 ◽  
pp. 160-161
Author(s):  
Akira Tanaka ◽  
David F. Harling
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Carbon Black ◽  
Single Crystal ◽  
Dark Field ◽  
Graphitized Carbon Black ◽  
Graphitized Carbon ◽  
Dark Field Imaging ◽  
Crystal Films ◽  
Micro Holes

In the previous paper, the author reported on a technique for preparing vapor-deposited single crystal films as high resolution standards for electron microscopy. The present paper is intended to describe the preparation of several high resolution standards for dark field microscopy and also to mention some results obtained from these studies. Three preparations were used initially: 1.) Graphitized carbon black, 2.) Epitaxially grown particles of different metals prepared by vapor deposition, and 3.) Particles grown epitaxially on the edge of micro-holes formed in a gold single crystal film.The authors successfully obtained dark field micrographs demonstrating the 3.4Å lattice spacing of graphitized carbon black and the Au single crystal (111) lattice of 2.35Å. The latter spacing is especially suitable for dark field imaging because of its preparation, as in 3.), above. After the deposited film of Au (001) orientation is prepared at 400°C the substrate temperature is raised, resulting in the formation of many square micro-holes caused by partial evaporation of the Au film.

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