scholarly journals Effect of mechanical treatment type on the strength of undoped single crystal indium antimonide wafers

2020 ◽  
Vol 6 (4) ◽  
pp. 147-153
Author(s):  
Svetlana S. Kormilitsina ◽  
Elena V. Molodtsova ◽  
Stanislav N. Knyzev ◽  
Roman Yu. Kozlov ◽  
Dmitry A. Zavrazhin ◽  
...  
Keyword(s):  
Single Crystal ◽  
Indium Antimonide ◽  
Mechanical Treatment ◽  
Treatment Cycle ◽  
Mechanical Damage ◽  
Damage Development ◽  
Transverse Bending ◽  
General Surface ◽  
Treatment Type ◽  
Strength Dependence

Thin (100) wafers of single crystal undoped InSb have been strength tested by plane transverse bending. The strength of the wafers (≤ 800 mm in thickness) has been shown to depend on their mechanical treatment type. If the full mechanical treatment cycle is used (grinding + chemical polishing) the strength of the InSb wafers increases twofold (from 3.0 to 6.4 kg/mm2). We show that the strength dependence on mechanical treatment type for (100) wafers is similar to that for (111) wafers, the strength of (111) wafers being 2 times higher. The roughness of the thin wafers after the full mechanical treatment cycle has been measured using contact profilometry. After the full mechanical treatment cycle the roughness of the InSb wafers Ra decreases from 0.6 to 0.04 mm leading to general surface smoothening. We have compared the strength and roughness between (100) InSb and GaAs wafers. The roughness of InSb and GaAs wafers after the full mechanical treatment cycle decreases significantly: by 10 times for InSb due to the general surface smoothening and by 3 times for GaAs (Rz from 2.4 to 0.8 mm) due to a reduction of the peak roughness component. The full mechanical treatment cycle increases the strength of InSb wafers by removing damaged layers through the sequence of operations and reducing the risk of mechanical damage development.

scholarly journals Study of the influence of treatment on the strength of undoped indium antimonide single-crystal plates

2021 ◽  
Vol 24 (1) ◽  
pp. 48-56
Author(s):  
S. S. Kormilitsina ◽  
E. V. Molodtsova ◽  
S. N. Knyzev ◽  
R. Yu. Kozlov ◽  
D. A. Zavrazhin ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Indium Antimonide ◽  
Crystallographic Orientation ◽  
Mechanical Damage ◽  
Thin Plates ◽  
Transverse Bending ◽  
Plane Transverse ◽  
Processing Steps ◽  
Processing Cycle

The method of plane-transverse bending was used to measure the strength of thin single-crystal plates of undoped InSb with a crystallographic orientation of (100). It was found that the strength of the plates (thickness ≤ 800 μm) depends on their processing. Using a full processing cycle (grinding and chemical polishing) allows to increase the strength of InSb plates by 2 times (from 3.0 to 6.4 kg/mm2). It is shown that the dependence of strength on processing for wafers with (100) orientation is similar to this dependence for wafers (111), while the strength of wafers (111) is 2 times higher. The contact profilometry method was used to measure the roughness of thin plates, which also passed successive processing steps. It was found that during a full cycle of processing, the roughness of InSb plates decreases (Ra from 0.6 to 0.04 μm), leading to a general smoothing of the surface roughness. The strength and roughness of the (100) InSb and GaAs wafers are compared. It was found that the strength of GaAs cut wafers is 2 times higher than the strength of InSb cut wafers and slightly increases after a full cycle of their processing. It was shown that the roughness of GaAs and InSb plates after a full cycle of surface treatment is significantly reduced: 10 times for InSb due to overall surface leveling and 3 times for GaAs (Rz from 2.4 to 0.8 μm) due to a decrease in the peak component. Conducting a full cycle of processing InSb plates can increase their strength by removing broken layers by sequential operations and reducing the risk of mechanical damage.

The Effects of Cooling Holes on the Creep Life in a Modeling Specimen of Single Crystal Air-Cooled Turbine Blade

2011 ◽  
Vol 284-286 ◽  
pp. 1678-1683 ◽  
Author(s):  
Da Shun Liu ◽  
Bai Zhi Wang ◽  
Zhi Xun Wen ◽  
Zhu Feng Yue
Keyword(s):  
Single Crystal ◽  
Turbine Blade ◽  
Damage Model ◽  
Creep Damage ◽  
Creep Life ◽  
Damage Development ◽  
User Subroutine ◽  
Initial Rupture ◽  
Creep Deformations ◽  
Sem Analyses

This paper presents the study of the influences of cooling holes on the creep life behavior in the modeling specimen of single crystal cooling turbine blade at high temperature. Thin-walled cylindrical specimens with holes are tested to model the air-cooled turbine blade. Specimens without holes are also studied to make comparisons. Experimental results show that at 900°C, the creep lives of specimens with holes are longer than those of specimens without holes. Scanning Electron Microscopy (SEM) analyses reveal that creep deformations occur firstly around the cooling holes and finally rupture at the region with low stress and strain. Finite element analyses are used to study the creep damage development by a K-R damage model which has been implemented into the Abaqus user subroutine (UMAT). Simulation results show that stress concentration and redistribution occur around the cooling holes during the creep development. It is also shown that the maximum strain and stress are around the cooling holes which are the initial rupture region in the experiments.

The effect of thermal and mechanical treatment on the drying rates of leaves and flowering stem internodes of Italian ryegrass (Lolium multiflorum) measured in the laboratory

1975 ◽  
Vol 85 (2) ◽  
pp. 325-329 ◽  
Author(s):  
C. E. Harris ◽  
R. Thaine
Keyword(s):  
Thermal Treatment ◽  
Mechanical Treatment ◽  
Dry Matter ◽  
Lolium Multiflorum ◽  
Mechanical Damage ◽  
Italian Ryegrass ◽  
Drying Rate ◽  
Flowering Stem ◽  
Air Speed ◽  
Drying Rates

SUMMARYThe drying rate of leaves and stem internodes from flowering culms of two varieties of Italian ryegrass (Lolium multiflorum) were measured in the laboratory in controlled conditions of temperature (28 °C), relative humidity (22%) and air speed (40 cm/sec), without treatment, or after being subjected to thermal treatment or to mechanical damage followed by thermal treatment. The two treatments increased the drying rate of leaves and, to a greater extent, stem internodes.While it cannot be concluded that all treatments that increase crop drying rate will increase the rate for stems more than for leaves, these results are considered to indicate the possibility of devising practical treatments which will. Such treatments could reduce leaf shatter and consequent serious loss of dry matter during the field drying of grass crops.

Etch Pitting on Single‐Crystal Indium Antimonide

1958 ◽  
Vol 29 (8) ◽  
pp. 1261-1261 ◽  
Author(s):  
R. E. Maringer
Keyword(s):  
Single Crystal ◽  
Indium Antimonide

scholarly journals Ultrasmall Single-Crystal Indium Antimonide Nanowires

2010 ◽  
Vol 10 (10) ◽  
pp. 4669-4669 ◽  
Author(s):  
Xunyu Yang ◽  
Gongming Wang ◽  
Peter Slattery ◽  
Jin Z. Zhang ◽  
Yat Li
Keyword(s):  
Single Crystal ◽  
Indium Antimonide

A systematic study of zone refining of single crystal indium antimonide

1966 ◽  
Vol 1 (1) ◽  
pp. 14-28 ◽  
Author(s):  
A. R. Murray ◽  
J. A. Baldrey ◽  
J. B. Mullin ◽  
O. Jones
Keyword(s):  
Single Crystal ◽  
Systematic Study ◽  
Indium Antimonide ◽  
Zone Refining

MAGNETORESISTANCE AND HALL EFFECT IN ORIENTED SINGLE CRYSTAL SAMPLES OF n-TYPE INDIUM ANTIMONIDE

1961 ◽  
Vol 39 (3) ◽  
pp. 452-467 ◽  
Author(s):  
C. H. Champness
Keyword(s):  
Magnetic Field ◽  
Field Strength ◽  
Single Crystal ◽  
Hall Effect ◽  
Air Temperature ◽  
Indium Antimonide ◽  
Room Temperature ◽  
Magneto Resistance ◽  
Longitudinal Magnetoresistance ◽  
Oriented Single Crystal

Measurements have been made on the angular dependence of the magneto-resistance effect and the Hall effect on oriented n-type indium antimonide samples. The measurements were taken at room temperature and liquid air temperature using a magnetic field strength of about 5000 gauss. Besides evidence of inhomogeneity, the results show directional dependence of the longitudinal magnetoresistance. The largest value was found in the [Formula: see text] direction. This can be explained if, in addition to electrons at the central minimum, there is some filling of the [Formula: see text] minima in k space.

Photoluminescence at 1.5 µm from single-crystal silicon layers subjected to mechanical treatment

2003 ◽  
Vol 37 (12) ◽  
pp. 1380-1382
Author(s):  
R. I. Batalov ◽  
R. M. Bayazitov ◽  
B. A. Andreev ◽  
D. I. Kryzhkov ◽  
E. I. Terukov ◽  
...  
Keyword(s):  
Single Crystal ◽  
Mechanical Treatment ◽  
Single Crystal Silicon ◽  
Crystal Silicon
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