scholarly journals Imaging and identification of point defects in PtTe2

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Kuanysh Zhussupbekov ◽  
Lida Ansari ◽  
John B. McManus ◽  
Ainur Zhussupbekova ◽  
Igor V. Shvets ◽  
...  
Keyword(s):  
Point Defects ◽  
Density Functional ◽  
Transition Metal Dichalcogenides ◽  
Density Functional Theory Calculations ◽  
Charge Carrier Mobility ◽  
Scanning Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Recombination Rates ◽  
And Performance

AbstractThe properties and performance of two-dimensional (2D) materials can be greatly affected by point defects. PtTe2, a 2D material that belongs to the group 10 transition metal dichalcogenides, is a type-II Dirac semimetal, which has gained a lot of attention recently due to its potential for applications in catalysis, photonics, and spintronics. Here, we provide an experimental and theoretical investigation of point defects on and near the surface of PtTe2. Using scanning tunneling microscopy and scanning tunneling spectroscopy (STS) measurements, in combination with first-principle calculations, we identify and characterize five common surface and subsurface point defects. The influence of these defects on the electronic structure of PtTe2 is explored in detail through grid STS measurements and complementary density functional theory calculations. We believe these findings will be of significance to future efforts to engineer point defects in PtTe2, which is an interesting and enticing approach to tune the charge-carrier mobility and electron–hole recombination rates, as well as the site reactivity for catalysis.

scholarly journals Nanodomain structure of single crystalline nickel oxide

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
B. Walls ◽  
A. A. Mazilkin ◽  
B. O. Mukhamedov ◽  
A. Ionov ◽  
I. A. Smirnova ◽  
...  
Keyword(s):  
Nickel Oxide ◽  
Domain Structure ◽  
Point Defects ◽  
Photoelectron Spectroscopy ◽  
Density Functional ◽  
Gas Sensing ◽  
Density Functional Theory Calculations ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
X Ray

AbstractIn this work we present a comprehensive study of the domain structure of a nickel oxide single crystal grown by floating zone melting and suggest a correlation between point defects and the observed domain structure. The properties and structure of domains dictate the dynamics of resistive switching, water splitting and gas sensing, to name but a few. Investigating the correlation between point defects and domain structure can provide a deeper understanding of their formation and structure, which potentially allows one to tailor domain structure and the dynamics of the aforementioned applications. A range of inhomogeneities are observed by diffraction and microscopy techniques. X-ray and low-energy electron diffraction reveal domains on the submicron- and nanometer-scales, respectively. In turn, these domains are visualised by atomic force and scanning tunneling microscopy (STM), respectively. A comprehensive transmission electron microscopy (TEM) study reveals inhomogeneities ranging from domains of varying size, misorientation of domains, variation of the lattice constant and bending of lattice planes. X-ray photoelectron spectroscopy and electron energy-loss spectroscopy indicate the crystal is Ni deficient. Density functional theory calculations—considering the spatial and electronic disturbance induced by the favourable nickel vacancy—reveal a nanoscale distortion comparable to STM and TEM observations. The different inhomogeneities are understood in terms of the structural relaxation induced by ordering of nickel vacancies, which is predicted to be favourable.

scholarly journals Engineering the magnetism of nanographene via co-depositing hetero precursors

2021 ◽  
Author(s):  
Hui Zhang ◽  
Jianchen Lu ◽  
Yong Zhang ◽  
Lei Gao ◽  
Xin-Jing Zhao ◽  
...  
Keyword(s):  
Density Functional ◽  
Carbon Nanomaterials ◽  
Density Functional Theory Calculations ◽  
Scanning Tunneling Spectroscopy ◽  
Carbon Skeleton ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Molecular Precursors ◽  
New Strategy ◽  
Spin Number

Abstract The magnetism of carbon nanomaterials is dominated by the structure of its carbon skeleton. However, the magnetism engineering is hindered due to finite precursors. Here, we develop a new strategy to engineer the magnetism of nanographene through hetero-coupling two different precursors on Au(111) surface by using low-temperature bond-resolved scanning tunneling microscopy and scanning tunneling spectroscopy, combined with spin-polarized density functional theory calculations. Our results demonstrate that two homo-coupled products host close shell structure along with defects inducing magnetic one with the total spin number S = 1/2. Upon simultaneous depositing with another precursor, two hetero-coupled products switch to magnetic structure with the S = 1/2 and S = 1 resulting from carbon skeleton transformation. Our results provide a valid way via inducing different molecular precursors to engineer the magnetism of carbon nanomaterials, which could be extended in other magnetic materials instruction.

scholarly journals Uniaxial strain-induced phase transition in the 2D topological semimetal IrTe2

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Christopher W. Nicholson ◽  
Maxime Rumo ◽  
Aki Pulkkinen ◽  
Geoffroy Kremer ◽  
Björn Salzmann ◽  
...  
Keyword(s):  
Density Functional ◽  
Transition Metal Dichalcogenides ◽  
Gain Control ◽  
Density Functional Theory Calculations ◽  
Uniaxial Strain ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Topological Semimetal ◽  
Topological States ◽  
Metal Dichalcogenides

AbstractStrain is ubiquitous in solid-state materials, but despite its fundamental importance and technological relevance, leveraging externally applied strain to gain control over material properties is still in its infancy. In particular, strain control over the diverse phase transitions and topological states in two-dimensional transition metal dichalcogenides remains an open challenge. Here, we exploit uniaxial strain to stabilize the long-debated structural ground state of the 2D topological semimetal IrTe2, which is hidden in unstrained samples. Combined angle-resolved photoemission spectroscopy and scanning tunneling microscopy data reveal the strain-stabilized phase has a 6 × 1 periodicity and undergoes a Lifshitz transition, granting unprecedented spectroscopic access to previously inaccessible type-II topological Dirac states that dominate the modified inter-layer hopping. Supported by density functional theory calculations, we show that strain induces an Ir to Te charge transfer resulting in strongly weakened inter-layer Te bonds and a reshaped energetic landscape favoring the 6×1 phase. Our results highlight the potential to exploit strain-engineered properties in layered materials, particularly in the context of tuning inter-layer behavior.

scholarly journals Native point defects and their implications for the Dirac point gap at MnBi2Te4(0001)

2022 ◽  
Vol 7 (1) ◽  
Author(s):  
M. Garnica ◽  
M. M. Otrokov ◽  
P. Casado Aguilar ◽  
I. I. Klimovskikh ◽  
D. Estyunin ◽  
...  
Keyword(s):  
Point Defects ◽  
Density Functional ◽  
Dirac Point ◽  
Density Functional Theory Calculations ◽  
Scanning Tunneling ◽  
X Ray Diffraction ◽  
Tunneling Microscopy ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Native Point Defects ◽  
Topological Surface

AbstractWe study the surface crystalline and electronic structures of the antiferromagnetic topological insulator MnBi2Te4 using scanning tunneling microscopy/spectroscopy (STM/S), micro(μ)-laser angle-resolved photoemission spectroscopy (ARPES), and density functional theory calculations. Our STM images reveal native point defects at the surface that we identify as BiTe antisites and MnBi substitutions. Bulk X-ray diffraction further evidences the presence of the Mn-Bi intermixing. Overall, our characterizations suggest that the defects concentration is nonuniform within crystals and differs from sample to sample. Consistently, the ARPES and STS experiments reveal that the Dirac point gap of the topological surface state is different for different samples and sample cleavages, respectively. Our calculations show that the antiparallel alignment of the MnBi moments with respect to those of the Mn layer can indeed cause a strong reduction of the Dirac point gap size. The present study provides important insights into a highly debated issue of the MnBi2Te4 Dirac point gap.

scholarly journals Unlocking surface octahedral tilt in two-dimensional Ruddlesden-Popper perovskites

2022 ◽  
Vol 13 (1) ◽  
Author(s):  
Yan Shao ◽  
Wei Gao ◽  
Hejin Yan ◽  
Runlai Li ◽  
Ibrahim Abdelwahab ◽  
...  
Keyword(s):  
Density Functional ◽  
Carrier Transport ◽  
Plane Surface ◽  
Structural Phase ◽  
Density Functional Theory Calculations ◽  
Spin Splitting ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Out Of Plane ◽  
Inversion Asymmetry

AbstractMolecularly soft organic-inorganic hybrid perovskites are susceptible to dynamic instabilities of the lattice called octahedral tilt, which directly impacts their carrier transport and exciton-phonon coupling. Although the structural phase transitions associated with octahedral tilt has been extensively studied in 3D hybrid halide perovskites, its impact in hybrid 2D perovskites is not well understood. Here, we used scanning tunneling microscopy (STM) to directly visualize surface octahedral tilt in freshly exfoliated 2D Ruddlesden-Popper perovskites (RPPs) across the homologous series, whereby the steric hindrance imposed by long organic cations is unlocked by exfoliation. The experimentally determined octahedral tilts from n = 1 to n = 4 RPPs from STM images are found to agree very well with out-of-plane surface octahedral tilts predicted by density functional theory calculations. The surface-enhanced octahedral tilt is correlated to excitonic redshift observed in photoluminescence (PL), and it enhances inversion asymmetry normal to the direction of quantum well and promotes Rashba spin splitting for n > 1.

scholarly journals Atomistic investigation of surface characteristics and electronic features at high-purity FeSi(110) presenting interfacial metallicity

2021 ◽  
Vol 118 (17) ◽  
pp. e2021203118
Author(s):  
Biao Yang ◽  
Martin Uphoff ◽  
Yi-Qi Zhang ◽  
Joachim Reichert ◽  
Ari Paavo Seitsonen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Density Of States ◽  
Density Functional ◽  
Iron Silicide ◽  
Density Functional Theory Calculations ◽  
Surface Characteristics ◽  
Scanning Tunneling ◽  
Magnetic Characteristics ◽  
Tunneling Microscopy ◽  
Single Crystal Surfaces

Iron silicide (FeSi) is a fascinating material that has attracted extensive research efforts for decades, notably revealing unusual temperature-dependent electronic and magnetic characteristics, as well as a close resemblance to the Kondo insulators whereby a coherent picture of intrinsic properties and underlying physics remains to be fully developed. For a better understanding of this narrow-gap semiconductor, we prepared and examined FeSi(110) single-crystal surfaces of high quality. Combined insights from low-temperature scanning tunneling microscopy and density functional theory calculations (DFT) indicate an unreconstructed surface termination presenting rows of Fe–Si pairs. Using high-resolution tunneling spectroscopy (STS), we identify a distinct asymmetric electronic gap in the sub-10 K regime on defect-free terraces. Moreover, the STS data reveal a residual density of states in the gap regime whereby two in-gap states are recognized. The principal origin of these features is rationalized with the help of the DFT-calculated band structure. The computational modeling of a (110)-oriented slab notably evidences the existence of interfacial intragap bands accounting for a markedly increased density of states around the Fermi level. These findings support and provide further insight into the emergence of surface metallicity in the low-temperature regime.

Subsurface cation vacancy stabilization of the magnetite (001) surface

Science ◽  
2014 ◽  
Vol 346 (6214) ◽  
pp. 1215-1218 ◽  
Author(s):  
R. Bliem ◽  
E. McDermott ◽  
P. Ferstl ◽  
M. Setvin ◽  
O. Gamba ◽  
...  
Keyword(s):  
Iron Oxides ◽  
Density Functional ◽  
Density Functional Theory Calculations ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Material Interface ◽  
Functional Theory ◽  
Ordered Array ◽  
Low Energy Electron

Iron oxides play an increasingly prominent role in heterogeneous catalysis, hydrogen production, spintronics, and drug delivery. The surface or material interface can be performance-limiting in these applications, so it is vital to determine accurate atomic-scale structures for iron oxides and understand why they form. Using a combination of quantitative low-energy electron diffraction, scanning tunneling microscopy, and density functional theory calculations, we show that an ordered array of subsurface iron vacancies and interstitials underlies the well-known (2×2)R45° reconstruction of Fe3O4(001). This hitherto unobserved stabilization mechanism occurs because the iron oxides prefer to redistribute cations in the lattice in response to oxidizing or reducing environments. Many other metal oxides also achieve stoichiometry variation in this way, so such surface structures are likely commonplace.

scholarly journals Structure-resistive property relationships in thin ferroelectric BaTiO$$_{3}$$ films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
N. V. Andreeva ◽  
A. Petraru ◽  
O. Yu. Vilkov ◽  
A. E. Petukhov
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Point Defects ◽  
Ferroelectric Properties ◽  
Piezoresponse Force Microscopy ◽  
Scanning Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Ferroelectric Films ◽  
Force Microscopy ◽  
Atomic Force

Abstract A combined study of local structural, electric and ferroelectric properties of SrTiO$$_{3}$$ 3 /La$$_{0.7}$$ 0.7 Sr$$_{0.3}$$ 0.3 MnO$$_{3}$$ 3 /BaTiO$$_{3}$$ 3 heterostructures was performed by Piezoresponse Force Microscopy, tunneling Atomic Force Microscopy and Scanning Tunneling Microscopy in the temperature range 30–295 K. The direct correlation of film structure (epitaxial, nanocrystalline or polycrystalline) with local electric and ferroelectric properties was observed. For polycrystalline ferroelectric films the predominant polarization state is defined by the peculiarity of screening the built-in field by positively charged point defects. Based on Scanning Tunneling Spectroscopy results, it was found that a sequent voltage application provokes the modification of local resistive properties related to the redistribution of point defects in thin ferroelectric films. A qualitative analysis of acquired Piezoresponse Force Microscopy, tunneling Atomic Force Microscopy and Scanning Tunneling Microscopy images together with Scanning Tunneling Spectroscopy measurements enabled us to conclude that in the presence of structural defects the competing processes of electron injection, trap filling and the drift of positively charged point defects drives the change of resistive properties of thin films under applied electric field. In this paper, we propose a new approach based on Scanning Tunneling Microscopy/Spectroscopy under ultrahigh vacuum conditions to clarify the influence of point defects on local resistive properties of nanometer-thick ferroelectric films.

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