Irradiation‐induced improvement of crystalline quality of epitaxially grown Ag thin films on Si substrates

1996 ◽  
Vol 69 (19) ◽  
pp. 2828-2830 ◽  
Author(s):  
K. Takahiro ◽  
S. Nagata ◽  
S. Yamaguchi
Keyword(s):  
Thin Films ◽  
Crystalline Quality ◽  
Si Substrates

The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC

2014 ◽  
Vol 778-780 ◽  
pp. 230-233
Author(s):  
Yukimune Watanabe ◽  
Tsuyoshi Horikawa ◽  
Kiichi Kamimura
Keyword(s):  
Diffusion Mechanism ◽  
Growth Direction ◽  
Crystalline Quality ◽  
Process Conditions ◽  
Heteroepitaxial Growth ◽  
Crystal Axis ◽  
Si Substrates ◽  
Selected Area Electron Diffraction ◽  
Better Than

The carbonized layer for a buffer layer strongly influences the crystalline quality of the 3C-SiC epitaxial films on the Si substrates. The growth mechanism of the carbonized layer strongly depended on the process conditions. The surface of silicon substrate was carbonized under the pressure of 7.8 × 10-3 Pa or 7.8 × 10-2 Pa in this research. Under the relatively low pressure of 7.8 × 10-3 Pa, the carbonized layer was grown by the epitaxial mechanism. The crystal axis of the carbonized layer grown under this pressure was confirmed to coincide with the crystal axis of the Si substrate from the results of the selected area electron diffraction (SAED) analysis. Under the relatively high pressure condition of 7.8 × 10-2 Pa, the carbonized layer was grown by the diffusion mechanism. The result of the SAED pattern and the XTEM image indicated that this layer consisted of small grainy crystals and their crystal axes inclined against the growth direction. It was confirmed that the crystalline quality of the SiC film deposited on the carbonized layer grown by the epitaxial mechanism is better than that deposited on the layer grown by the diffusion mechanism.

Crystalline quality of ZnSe thin films grown on GaAs by pulsed laser deposition in He and Ar ambients

2001 ◽  
Vol 388 (1-2) ◽  
pp. 189-194 ◽  
Author(s):  
Tapas Ganguli ◽  
M. Vedvyas ◽  
P. Bhattacharya ◽  
L.M. Kukreja ◽  
Alka Ingale ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Crystalline Quality ◽  
Znse Thin Films

Preparation and Electrical Properties of (100) Preferred (Ba,Sr)TiO3 Bilayer Thin Films Derived from Pulse Laser Deposition Method

2007 ◽  
Vol 280-283 ◽  
pp. 849-852
Author(s):  
Sheng Guo Lu ◽  
Philip A. Friddle ◽  
Z.K. Xu ◽  
G.G. Siu ◽  
Haydn Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulse Laser Deposition ◽  
Leakage Current ◽  
Pulse Laser ◽  
Laser Deposition ◽  
Pulse Laser Deposition Method ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
Si Substrates

Bilayer Ba0.6Sr0.4TiO3 - Ba0.4Sr0.6TiO3 and Ba0.4Sr0.6TiO3 - Ba0.6Sr0.4TiO3 thin films were deposited on the LaNiO3-buffered Pt/Ti/SiO2/Si substrates using pulse laser deposition method. A (100)preferred orientation was obtained. The structure was characterized using x-ray diffraction (XRD) and Raman spectroscopy. The leakage current, and dielectric permittivity versus temperature were characterized. Results indicated that the (100) preferred bilayer structure had less leakage current and smaller loss tangent, which was in favor of enhancing the quality of thin film used as microwave dielectrics.

scholarly journals Influence of growth rate on the epitaxial orientation and crystalline quality of CeO2 thin films grown on Al2O3(0001)

2011 ◽  
Vol 109 (1) ◽  
pp. 013525 ◽  
Author(s):  
M. I. Nandasiri ◽  
P. Nachimuthu ◽  
T. Varga ◽  
V. Shutthanandan ◽  
W. Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Crystalline Quality

Effects of Heat Treatment on Crystalline Quality of Er-Ba-Cu-O Thin Films

1989 ◽  
pp. 587-591
Author(s):  
Kazumasa Takagi ◽  
Tsutomu Ishiba ◽  
Toshiyuki Aida ◽  
Tokuumi Fukazawa ◽  
Katsuki Miyauchi
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Crystalline Quality

Determination of domain structure and abundance of epitaxial Pb(Zr, Ti)O3 thin films grown on MgO(001) by rf magnetron sputtering

1999 ◽  
Vol 14 (1) ◽  
pp. 132-141 ◽  
Author(s):  
Kyeong Seok Lee ◽  
Young Min Kang ◽  
Sunggi Baik
Keyword(s):  
Thin Films ◽  
Curie Temperature ◽  
Magnetron Sputtering ◽  
Domain Structure ◽  
Rf Magnetron Sputtering ◽  
Curve Analysis ◽  
Crystalline Quality ◽  
Rocking Curve ◽  
X Ray

Epitaxial Pb(ZrxTi1−x)O3 (x = 0.0−0.32) ferroelectric thin films of 500 nm thickness were grown on MgO(001) single crystal substrates by in situ rf magnetron sputtering, and evolution of their domain structures is characterized by employing various x-ray diffraction techniques. X-ray θ-2θ scan showed the films were grown highly c-axis oriented with a tetragonal perovskite structure. 90° domain configuration was investigated using the x-ray rocking curve analysis for PZT 100 peaks in two different Φphi; angles. The rocking curve analysis showed that the degree of c-axis orientation and the crystalline quality of the films were improved continuously with increasing Zr concentration. The c-domain abundance as a function of Zr concentration was quantified using the x-ray rocking curves of PZT 001 and 100, taking account of structural factors and Lorentz-polarization factors. High temperature x-ray technique was also employed to quantify the domain structure as a function of temperature during cooling after reheating the samples to 650 °C. During the cooling process, c-domain abundance was found to increase continuously while the crystalline quality of the films was deteriorated below the Curie temperature. The results led us to conclude that the transformation strain of the film at and below the Curie temperature plays a significant role in the final domain structure and abundance of epitaxial PZT thin films.

Crystallographic Analysis of (110)CeO2/(100)Si Using RBS/Channeling Technique

1993 ◽  
Vol 312 ◽  
Author(s):  
Masataka Satoh ◽  
Yasuhiro Yamamoto ◽  
Shigeyuki Nakajima ◽  
Yoshinobu Sakurai ◽  
Tomoyasu Inoue ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystallographic Analysis ◽  
Crystalline Quality ◽  
Depth Information ◽  
Planar Channeling ◽  
Si Substrate ◽  
Si Substrates

AbstractEpitaxially grown CeO2 layers on (100)Si substrates are studied using the RBS/channeling technique. The crystallographic correlation between the overgrown layers and off-oriented Si substrates is precisely analyzed by means of constructing stereographic projections obtained from the planar channeling dips. From the stereographic projections for the CeO2 layer on the 4° off-oriented Si substrate, it is clearly seen not only that the epitaxial (110)CeO2 layer is single crystal with the direction defined as [001]CeO2 ║ [011]Si, but also that the crystalline quality of (110)CeO2 on (100)Si can be improved by use of the off-oriented substrate. The inclined epitaxial direction is also detected as the depth information.

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