The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC

2014 ◽  
Vol 778-780 ◽  
pp. 230-233
Author(s):  
Yukimune Watanabe ◽  
Tsuyoshi Horikawa ◽  
Kiichi Kamimura
Keyword(s):  
Diffusion Mechanism ◽  
Growth Direction ◽  
Crystalline Quality ◽  
Process Conditions ◽  
Heteroepitaxial Growth ◽  
Crystal Axis ◽  
Si Substrates ◽  
Selected Area Electron Diffraction ◽  
Better Than

The carbonized layer for a buffer layer strongly influences the crystalline quality of the 3C-SiC epitaxial films on the Si substrates. The growth mechanism of the carbonized layer strongly depended on the process conditions. The surface of silicon substrate was carbonized under the pressure of 7.8 × 10-3 Pa or 7.8 × 10-2 Pa in this research. Under the relatively low pressure of 7.8 × 10-3 Pa, the carbonized layer was grown by the epitaxial mechanism. The crystal axis of the carbonized layer grown under this pressure was confirmed to coincide with the crystal axis of the Si substrate from the results of the selected area electron diffraction (SAED) analysis. Under the relatively high pressure condition of 7.8 × 10-2 Pa, the carbonized layer was grown by the diffusion mechanism. The result of the SAED pattern and the XTEM image indicated that this layer consisted of small grainy crystals and their crystal axes inclined against the growth direction. It was confirmed that the crystalline quality of the SiC film deposited on the carbonized layer grown by the epitaxial mechanism is better than that deposited on the layer grown by the diffusion mechanism.

Variation of Vanadium Incorporation in Semi-Insulating SiC Single Crystals Grown by PVT Method

2019 ◽  
Vol 963 ◽  
pp. 30-33
Author(s):  
Chae Young Lee ◽  
Jeong Min Choi ◽  
Dae Sung Kim ◽  
Mi Seon Park ◽  
Yeon Suk Jang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
High Purity ◽  
Growth Direction ◽  
Source Materials ◽  
Better Than

Two SiC crystals were grown using SiC source powder with different level of purity and then the effect of the purity of SiC source materials on the final electrical properties has been systematically observed. Furthermore, the variation of vanadium amount according to the growth direction of vanadium doped semi-insulated SiC single crystals has been investigated. The quality of SiC crystal grown using SiC source powder with higher purity was definitely better than SiC crystal with lower purity. SiC crystals having an average resistivity value of about 1×1010 Ωcm were successfully obtained. In the result of COREMA measurement, the use of high purity SiC powder was revealed to obtain wafers with better uniformity in resistivity value.

II-VI Material Integration With Silicon for Detector and PV Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (50) ◽  
pp. 3391-3402 ◽  
Author(s):  
T.A. Gessert ◽  
E. Colegrove ◽  
B. Stafford ◽  
R. Kodama ◽  
Wei Gao ◽  
...  
Keyword(s):  
Growth Process ◽  
High Efficiency ◽  
Photovoltaic Devices ◽  
Heteroepitaxial Growth ◽  
Ir Detector ◽  
Ir Detectors ◽  
Growth Environment ◽  
Si Substrates ◽  
Conversion Efficiencies

ABSTRACTHeteroepitaxial growth of high-quality II-VI-alloy materials on Si substrates is a well-established commercial growth process for infrared (IR) detector devices. However, it has only recently been recognized that these same processes may have important applications for production of high-efficiency photovoltaic devices. This submission reviews the process developments that have enabled effective heteroepitaxy of II-VI alloy materials on lattice-mismatched Si for IR detectors as a foundation to describe recent efforts to apply these insights to the fabrication of multijunction Si/CdZnTe devices with ultimate conversion efficiencies >40%. Reviewed photovoltaic studies include multijunction Si/CdZnTe devices with conversion efficiency of ∼17%, analysis of structural and optoelectrical quality of undoped CdTe epilayer films on Si, and the effect that a Te-rich growth environment has on the structural and optoelectronic quality of both undoped and As-doped heteroepitaxial CdTe.

Effects of substrates and catalysts compositions on the crystalline quality of InP Nanowires grown on SrTiO3 (001), Si(001) and InP (111)

2010 ◽  
Vol 1258 ◽  
Author(s):  
Khalid Naji ◽  
Herve Dumont ◽  
Guillaume Saint-Girons ◽  
Gilles Patriarche ◽  
michel Gendry
Keyword(s):  
Molecular Beam ◽  
Defect Formation ◽  
High Energy ◽  
Growth Direction ◽  
Crystalline Quality ◽  
Metal Catalyst ◽  
Cubic Phase ◽  
High Energy Electron ◽  
Transmission Electron

AbstractIndium phosphide (InP) nanowires (NWs) were grown by molecular beam epitaxy on various substrates including SrTiO3 (001), Si (001) and InP (111) at a growth temperature of 380°C. We used the Vapor Liquid Solid assisted method with Au as a metal catalyst. The composition of the catalyst particles and the crystalline structure of the nanowires were compared using reflection high energy electron diffraction, scanning electron microscopy and high resolution transmission electron microscope. It is found that InP nanowires grown onto InP and SrTiO3 substrates are structurally defects free with a wurtzite structure. On Si (001) substrates, the presence of stacking faults and cubic phase insertion along the growth direction is observed. The effect of the substrate on the composition of catalyst droplets and consequently on the crystalline quality of the nanowires is discussed for the conditions of nucleation and defect formation.

Irradiation‐induced improvement of crystalline quality of epitaxially grown Ag thin films on Si substrates

1996 ◽  
Vol 69 (19) ◽  
pp. 2828-2830 ◽  
Author(s):  
K. Takahiro ◽  
S. Nagata ◽  
S. Yamaguchi
Keyword(s):  
Thin Films ◽  
Crystalline Quality ◽  
Si Substrates

Plasma-Texturing Processes and a-Si:H Surface Passivation on c-Si Wafers for Photovoltaic Applications

2015 ◽  
Vol 137 (5) ◽  
Author(s):  
D. Murias ◽  
M. Moreno ◽  
C. Reyes-Betanzo ◽  
A. Torres ◽  
R. Ambrosio ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Crystalline Silicon ◽  
Low Cost ◽  
Process Conditions ◽  
Effective Lifetime ◽  
Heterojunction Solar Cells ◽  
Si Substrates ◽  
Photovoltaic Applications ◽  
Hydrogenated Amorphous ◽  
Better Than

In this work, we report the formation of pyramidlike structures on crystalline silicon (c-Si) substrates using plasma-texturing processes, and also, we present optimized process conditions for the deposition of hydrogenated amorphous silicon in order to passivate low cost CZ c-Si wafers. A relatively high effective lifetime of minority carriers was measured on nontextured wafers. Our results demonstrate that plasma-texturing processes can produce similar results or even better than wet-texturing processes. Finally, combined plasma texturing and passivation at low temperature is a promising approach for the fabrication of low cost heterojunction solar cells in CZ c-Si substrates.

Crystallographic Analysis of (110)CeO2/(100)Si Using RBS/Channeling Technique

1993 ◽  
Vol 312 ◽  
Author(s):  
Masataka Satoh ◽  
Yasuhiro Yamamoto ◽  
Shigeyuki Nakajima ◽  
Yoshinobu Sakurai ◽  
Tomoyasu Inoue ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystallographic Analysis ◽  
Crystalline Quality ◽  
Depth Information ◽  
Planar Channeling ◽  
Si Substrate ◽  
Si Substrates

AbstractEpitaxially grown CeO2 layers on (100)Si substrates are studied using the RBS/channeling technique. The crystallographic correlation between the overgrown layers and off-oriented Si substrates is precisely analyzed by means of constructing stereographic projections obtained from the planar channeling dips. From the stereographic projections for the CeO2 layer on the 4° off-oriented Si substrate, it is clearly seen not only that the epitaxial (110)CeO2 layer is single crystal with the direction defined as [001]CeO2 ║ [011]Si, but also that the crystalline quality of (110)CeO2 on (100)Si can be improved by use of the off-oriented substrate. The inclined epitaxial direction is also detected as the depth information.

The Influence of Frequency and Pressure on the Material Quality of PECVD A-SI:H

1995 ◽  
Vol 377 ◽  
Author(s):  
W.G.J.H.M. Van Sark ◽  
J. Bezemer ◽  
E. M. B. Heller ◽  
M. Kars ◽  
W. F. Van Der Weg
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Clear Correlation ◽  
Frequency Variation ◽  
Process Conditions ◽  
Optimum Pressure ◽  
Quality Requirements ◽  
Material Quality ◽  
Better Than

ABSTRACTA systematic study of material quality has been performed for a-Si:H layers deposited by plasma enhanced chemical vapour deposition at frequencies between 30–80 MHz. The effect of frequency variation was studied in combination with the variation of pressure and power density. The process conditions were optimised not only for ‘device quality’ opto-electronic properties but also for a uniformity in layer thickness better than 5 %. For every frequency an optimum pressure exists for which the properties of the deposited layer satisfy the ‘device quality’ requirements. A clear correlation is observed between the transition from the so-called α- to the γ-regime of the plasma and the dependence of the deposition rate γd with pressure pand frequency ƒ: γ d ∝ pƒ2/3.

Comparative Studies of the Structural, Electrical and Opto-Electronic Properties of Epitaxial GaAs Layers Grown On Either Si, Ge Or Ge Coated Si Substrates By Mocvd

1987 ◽  
Vol 91 ◽  
Author(s):  
M. Abdul Awai ◽  
El Hang Lee ◽  
Eric Y. Chan ◽  
R.M. Lum ◽  
J.K. Klingert ◽  
...  
Keyword(s):  
Defect Density ◽  
Schottky Diodes ◽  
Optoelectronic Properties ◽  
Electrical Characteristics ◽  
Doping Density ◽  
Si Substrates ◽  
Diode Ideality Factor ◽  
Gaas Films ◽  
Better Than

ABSTRACTWe report the epitaxial growth of GaAs films on bulk Si, Ge and Ge coated Si substrates by MOCVD. This work is directed at comparing the structural, electrical, optical and optoelectronic properties of the GaAs films grown on these substrates. The quality of the GaAs films was evaluated by a number of techniques including X-ray, TEM, RBS, I-V and C-V. We have also obtained good photoresponse for Au-GaAs/Si, Au-GaAs/Ge and Au-GaAs/Ge/Si Schottky diodes at 0.87μm. We have observed significant differences in defect density, strain, crystalline quality, structural order, doping density depth-profile, dark current, diode ideality factor, photoresponse, inter-diffusion and interface structure among these three different structures. The GaAs/Ge structure exhibited the best structural and electrical characteristics of all. The GaAs/Ge/Si structure showed material properties and Schottky diode performance that are better than those of the GaAs/Si stucture. Although Ge and Si both out-diffuse into GaAs, that the out-diffusion of Si into GaAs appears to cause more degradation in the electrical and optoelectronic properties of GaAs.

Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer

2015 ◽  
Vol 1 (1) ◽  
pp. 5
Author(s):  
Budi Astuti ◽  
Shaharin Fadzli Abd Rahman ◽  
Masahiro Tanikawa ◽  
Mohamad Rusop Mahmood ◽  
Kanji Yasui ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor ◽  
Diffraction Peak ◽  
Grown Film ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Growth Pressure ◽  
Si Substrates ◽  
Sic Film

Heteroepitaxial growth of silicon carbide (SiC) on graphene/SiO<sub>2</sub>/Si substrates was carried out using a home-made hot-mesh chemical vapor deposition (HM-CVD) apparatus. Monomethylsilane (MMS) was used as single source gas while hydrogen (H<sub>2</sub>) as carrier gas. The substrate temperature, tungsten mesh temperature, H<sub>2</sub> flow rate and distance between mesh and substrate were fixed at 750 °C, 1700 °C, 100 sccm and 30 mm, respectively. The growth pressures were set to 1.2, 1.8 and 2.4 Torr. The growth of 3C-SiC (111) on graphene/SiO<sub>2</sub>/Si were confirmed by the observation of θ-2θ diffraction peak at 35.68°. The diffraction peak of thin film on graphene/SiO<sub>2</sub>/Si substrate at pressure growth is 1.8 Torr is relatively more intense and sharper than thin film grown at pressure growth 1.2 and 2.4 Torr, thus indicates that the quality of grown film at 1.8 Torr is better. The sharp and strong peak at 33° was observed on the all film grown, that peak was attributed Si(200) nanocrystal. The reason why Si (200) nanocrystal layer is formed is not understood. In principle, it can’t be denied that the low quality of the grown thin film is influenced by the capability of our home-made apparatus. However, we believe that the quality can be further increased by the improvement of apparatus design. As a conclusion, the growth pressures around 1.8 Torr seems to be the best pressures for the growth of heteroepitaxial 3C-SiC thin film.

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