Characterization of ultrathin metal–oxide–semiconductor structures using coupled current and capacitance–voltage models based on quantum calculation

2002 ◽  
Vol 92 (8) ◽  
pp. 4449-4458 ◽  
Author(s):  
O. Simonetti ◽  
T. Maurel ◽  
M. Jourdain
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Quantum Calculation ◽  
Semiconductor Structures ◽  
Capacitance Voltage

Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structures

2013 ◽  
Vol 109 ◽  
pp. 10-12 ◽  
Author(s):  
Sung-Bum Bae ◽  
Ki-Won Kim ◽  
Yong Soo Lee ◽  
Jung-Hee Lee ◽  
Youngho Bae ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Capacitance Voltage

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

2015 ◽  
Vol 106 (5) ◽  
pp. 051605 ◽  
Author(s):  
Shenghou Liu ◽  
Shu Yang ◽  
Zhikai Tang ◽  
Qimeng Jiang ◽  
Cheng Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Interfacial Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures

Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

2007 ◽  
Vol 91 (13) ◽  
pp. 133510 ◽  
Author(s):  
Guy Brammertz ◽  
Koen Martens ◽  
Sonja Sioncke ◽  
Annelies Delabie ◽  
Matty Caymax ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Capacitance Voltage
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