Powder formation in SiH4–H2 discharge in large area capacitively coupled reactors: A study of the combined effect of interelectrode distance and pressure

2010 ◽  
Vol 107 (2) ◽  
pp. 023302 ◽  
Author(s):  
B. Strahm ◽  
Ch. Hollenstein
Keyword(s):  
Combined Effect ◽  
Interelectrode Distance ◽  
Large Area ◽  
Capacitively Coupled ◽  
Powder Formation ◽  
Coupled Reactors

Effect of Segmenting Powered Electrode on Plasma Uniformity in Large-Area Capacitively Coupled Plasma Discharge

2011 ◽  
Vol 39 (11) ◽  
pp. 2526-2527 ◽  
Author(s):  
Zhigang Chen ◽  
Jason Kenney ◽  
Shahid Rauf ◽  
Ken Collins ◽  
Tom Tanaka ◽  
...  
Keyword(s):  
Plasma Discharge ◽  
Large Area ◽  
Capacitively Coupled ◽  
Capacitively Coupled Plasma

Engineering of PECVD Systems for Macroelectronic Applications

1992 ◽  
Vol 258 ◽  
Author(s):  
R. Martins ◽  
I. Ferreira ◽  
C. N. Carvalho ◽  
A. Maçarico ◽  
L. Guimarães
Keyword(s):  
Reactor Design ◽  
Behaviour Problems ◽  
Large Area ◽  
Powder Formation ◽  
Deposition Conditions

ABSTRACTThe materials quality (uniformity and homogeneity) produced by PECVD technique depends on the plasma behaviour. Problems related to the gas dissociation ratio and powder formation are responsible for materials costs and the appearance of voids. In this paper, we present data concerning the role of the plasma and reactor design, on the deposition conditions, suggesting ways to improve them for large area device (macroelectronics) applications.

Effects of process parameters and chamber structure on plasma uniformity in a large-area capacitively coupled discharge

Vacuum ◽  
2021 ◽  
pp. 110678
Author(s):  
Jicheng Zhou ◽  
Jia Liao ◽  
Jing Huang ◽  
Techao Chen ◽  
Bowen Lv ◽  
...  
Keyword(s):  
Process Parameters ◽  
Large Area ◽  
Capacitively Coupled

Crystallinity Uniformity of Microcrystalline Silicon Thin Films Deposited in Large Area Radio Frequency Capacitively-coupled Reactors

2008 ◽  
Vol 1066 ◽  
Author(s):  
Benjamin Strahm ◽  
Alan A. Howling ◽  
Christoph Hollenstein
Keyword(s):  
Solar Cells ◽  
Radio Frequency ◽  
Power Distribution ◽  
Plasma Chemistry ◽  
Cost Effective ◽  
Rf Power ◽  
Microcrystalline Silicon ◽  
Large Area ◽  
Capacitively Coupled ◽  
Silane Concentration

ABSTRACTThe microcrystalline silicon (μc-Si:H) intrinsic layer for application in micromorph tandem photovoltaic solar cells has to be optimized in order to achieve cost-effective mass production of solar cells in large area, radio frequency, capacitively-coupled PECVD reactors. The optimization has to be performed with regard to the deposition rate as well as to the crystallinity uniformity over the substrate area. The latter condition is difficult to achieve since the optimal solar grade μc-Si:H is deposited at the limit between a-Si:H and μc-Si:H material, where the film crystallinity is very sensitive to the plasma process. In this work, a controlled RF power nonuniformity was generated in a large area industrial reactor. The resulting film uniformity was studied as a function of the deposition regimes. Results show that the higher the input silane concentration, the more the uniformity of the crystallinity is sensitive to the RF power nonuniformity for films deposited at the limit between a-Si:H and μc-Si:H. The effect of the input silane concentration on the microstructure uniformity could be explained on the basis of an analytical plasma chemistry model. This result is important for reactor design. In reactors generating nonuniform plasma the input silane concentration has to be limited to low values in order to deposit films with uniform microstructure. To benefit from the high silane flow rate utilization fraction encountered only for higher input silane concentration, the RF power distribution has to be as uniform as possible over the whole substrate area.

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