Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

Applied Physics Letters ◽

10.1063/1.3617436 ◽

2011 ◽

Vol 99 (4) ◽

pp. 042908 ◽

Author(s):

L. K. Chu ◽

C. Merckling ◽

A. Alian ◽

J. Dekoster ◽

J. Kwo ◽

...

Keyword(s):

Metal Oxide ◽

Molecular Beam ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness

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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Applied Physics Letters ◽

10.1063/1.2189456 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132107 ◽

Author(s):

A. Ritenour ◽

A. Khakifirooz ◽

D. A. Antoniadis ◽

R. Z. Lei ◽

W. Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

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Effects of composition and thickness of TiN metal gate on the equivalent oxide thickness and flat-band voltage in metal oxide semiconductor devices

Microelectronic Engineering ◽

10.1016/j.mee.2013.03.056 ◽

2013 ◽

Vol 109 ◽

pp. 160-162 ◽

Author(s):

Seok-Hee Lee ◽

Rino Choi ◽

Changhwan Choi

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flat Band ◽

Flat Band Voltage ◽

Equivalent Oxide Thickness ◽

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In-Situ Deposition of High-k Gate Stack on InGaAs and GaAs for Metal-Oxide-Semiconductor Devices with Low Equivalent Oxide Thickness

ECS Transactions ◽

10.1149/1.2779579 ◽

2019 ◽

Vol 11 (4) ◽

pp. 431-439 ◽

Author(s):

Rama Kambhampati ◽

Sergei Koveshnikov ◽

Vadim Tokranov ◽

M. Yakimov ◽

R Moore ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

In Situ Deposition ◽

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Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness

Applied Physics Letters ◽

10.1063/1.4805037 ◽

2013 ◽

Vol 102 (19) ◽

pp. 192904 ◽

Author(s):

S. P. Pavunny ◽

P. Misra ◽

R. Thomas ◽

A. Kumar ◽

J. Schubert ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

High K ◽

High K Gate Dielectric

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Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

Microelectronic Engineering ◽

10.1016/j.mee.2011.04.009 ◽

2012 ◽

Vol 89 ◽

pp. 15-18 ◽

Author(s):

Chuan-Hsi Liu ◽

Hung-Wen Hsu ◽

Hung-Wen Chen ◽

Pi-Chun Juan ◽

Mu-Chun Wang ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectrics ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

Reliability Characteristics

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In-Situ Deposition of High-k Gate Stack on MBE Grown InGaAs and GaAs for Metal-Oxide-Semiconductor Devices with High Channel Mobility and Low Equivalent Oxide Thickness

ECS Meeting Abstracts ◽

10.1149/ma2007-02/20/1154 ◽

2007 ◽

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

Channel Mobility ◽

In Situ Deposition ◽

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕HfO2 gate dielectric

Applied Physics Letters ◽

10.1063/1.2943186 ◽

2008 ◽

Vol 92 (25) ◽

pp. 253506 ◽

Author(s):

Han Zhao ◽

Davood Shahrjerdi ◽

Feng Zhu ◽

Hyoung-Sub Kim ◽

Injo OK ◽

...

Keyword(s):

Indium Phosphide ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness

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Improved electrical properties of Ge metal-oxide-semiconductor devices with HfO2 gate dielectrics using an ultrathin GeSnOx film as the surface passivation layer

Applied Physics Letters ◽

10.1063/1.4800228 ◽

2013 ◽

Vol 102 (14) ◽

pp. 142906 ◽

Author(s):

Mei Zhao ◽

Renrong Liang ◽

Jing Wang ◽

Jun Xu

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Surface Passivation ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

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Crystalline ZrTiO4 gated p-metal–oxide–semiconductor field effect transistors with sub-nm equivalent oxide thickness featuring good electrical characteristics and reliability

Applied Physics Letters ◽

10.1063/1.4907728 ◽

2015 ◽

Vol 106 (5) ◽

pp. 053508 ◽

Author(s):

Chao-Yi Wu ◽

Ching-Heng Hsieh ◽

Ching-Wei Lee ◽

Yung-Hsien Wu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Equivalent Oxide Thickness

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