scholarly journals Discharge dynamics, plasma kinetics and gas flow effect in argon-acetylene discharges

2021 ◽  
Author(s):  
Gautier Tetard ◽  
Armelle Michau ◽  
Swaminathan Prasanna ◽  
Jonathan Mougenot ◽  
Pascal Brault ◽  
...  
Keyword(s):  
Gas Flow ◽  
Plasma Kinetics ◽  
Flow Effect

Gas Flow Effect on E. coli and B. subtilis Bacteria Inactivation in Water Using a Pulsed Dielectric Barrier Discharge

2013 ◽  
Vol 41 (1) ◽  
pp. 147-154 ◽  
Author(s):  
Benjamín Gonzalo Rodriguez-Mendez ◽  
Alma Neli Hernandez-Arias ◽  
Régulo Lopez-Callejas ◽  
Raúl Valencia-Alvarado ◽  
Antonio Mercado-Cabrera ◽  
...  
Keyword(s):  
Dielectric Barrier Discharge ◽  
Gas Flow ◽  
Barrier Discharge ◽  
Dielectric Barrier ◽  
Flow Effect ◽  
E Coli ◽  
Bacteria Inactivation

scholarly journals Investigation of the gas flow effect on an atmospheric pressure RF plasma torch

2011 ◽  
Vol 275 ◽  
pp. 012012 ◽  
Author(s):  
M Atanasova ◽  
D Mihailova ◽  
E Carbone ◽  
J van Dijk ◽  
J J A M van der Mullen ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Plasma Torch ◽  
Gas Flow ◽  
Rf Plasma ◽  
Flow Effect

p-Si(100)/InGaN thin film structure and investigation of its physical properties: N2 gas flow effect

2019 ◽  
Vol 18 ◽  
pp. 1868-1874
Author(s):  
Erman Erdoğan ◽  
Mutlu Kundakçı ◽  
Ahmet Emre Kasapoğlu ◽  
Emre Gür
Keyword(s):  
Thin Film ◽  
Physical Properties ◽  
Gas Flow ◽  
Film Structure ◽  
Flow Effect ◽  
Thin Film Structure

TEM evaluation of graded SixGe1-x heterolayers

1991 ◽  
Vol 49 ◽  
pp. 894-895
Author(s):  
N. David Theodore ◽  
Mamoru Tomozane ◽  
Ming Liaw
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Gas Flow ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Dark Field ◽  
Bipolar Transistors ◽  
Structural Quality ◽  
Weak Beam ◽  
Transmission Electron ◽  
And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

Electron Microscopy/Diffraction Study of the Ternary Mn-Er-S System

1990 ◽  
Vol 48 (1) ◽  
pp. 76-77
Author(s):  
A. R. Landa Canovas ◽  
L.C. Otero Diaz ◽  
T. White ◽  
B.G. Hyde
Keyword(s):  
Electron Microscopy ◽  
Gas Flow ◽  
Graphite Crucible ◽  
Nominal Composition ◽  
X Ray Diffraction ◽  
Alumina Crucible ◽  
X Ray ◽  
Intermediate Phases ◽  
Twin Band ◽  
Ar Gas

X-Ray diffraction revealed two intermediate phases in the system MnS+Er2S3,:MnEr2S4= MnS.Er2S3, and MnEr4S7= MnS.2Er2S3. Their structures may be described as NaCl type, chemically twinned at the unit cell level, and isostructural with CaTi2O4, and Y5S7 respectively; i.e. {l13} NaCl twin band widths are (4,4) and (4,3).The present study was to search for structurally-related (twinned B.) structures and or possible disorder, using the more sensitive and appropiate technigue of electron microscopy/diffraction.A sample with nominal composition MnEr2S4 was made by heating Mn3O4 and Er2O3 in a graphite crucible and a 5% H2S in Ar gas flow at 1500°C for 4 hours. A small amount of this material was thenannealed, in an alumina crucible, contained in sealed evacuated silica tube, for 24 days at 1100°C. Both samples were studied by X-ray powder diffraction, and in JEOL 2000 FX and 4000 EX microscopes.

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