scholarly journals ExoMol line lists – XXXVIII. High-temperature molecular line list of silicon dioxide (SiO2)

2020 ◽  
Vol 495 (2) ◽  
pp. 1927-1933 ◽  
Author(s):  
A Owens ◽  
E K Conway ◽  
J Tennyson ◽  
S N Yurchenko
Keyword(s):  
High Temperature ◽  
Silicon Dioxide ◽  
Data Base ◽  
First Principles ◽  
Spectroscopic Data ◽  
Rotational Excitation ◽  
Molecular Line ◽  
Line List ◽  
Wavenumber Range

ABSTRACT Silicon dioxide (SiO2) is expected to occur in the atmospheres of hot rocky super-Earth exoplanets but a lack of spectroscopic data is hampering its possible detection. Here, we present the first, comprehensive molecular line list for SiO2. The line list, named OYT3, covers the wavenumber range 0 – 6000 cm−1 (wavelengths λ > 1.67 μm) and is suitable for temperatures up to T = 3000 K. Almost 33 billion transitions involving 5.69 million rotation–vibration states with rotational excitation up to J = 255 have been computed using robust first-principles methodologies. The OYT3 line list is available from the ExoMol data base at www.exomol.com.

scholarly journals ExoMol line lists – XLI. High-temperature molecular line lists for the alkali metal hydroxides KOH and NaOH

2021 ◽  
Author(s):  
A Owens ◽  
J Tennyson ◽  
S N Yurchenko
Keyword(s):  
High Temperature ◽  
Alkali Metal ◽  
First Principles ◽  
Spectroscopic Data ◽  
Potassium Hydroxide ◽  
Energy Levels ◽  
Rotational Excitation ◽  
Molecular Line ◽  
Metal Hydroxides ◽  
Line List

Abstract Potassium hydroxide (KOH) and sodium hydroxide (NaOH) are expected to occur in the atmospheres of hot rocky super-Earth exoplanets but a lack of spectroscopic data is hampering their potential detection. Using robust first-principles methodologies, comprehensive molecular line lists for KOH and NaOH that are applicable for temperatures up to T = 3500 K are presented. The KOH OYT4 line list covers the 0 – 6000 cm−1 (wavelengths λ > 1.67 μm) range and comprises 38 billion transitions between 7.3 million energy levels with rotational excitation up to J = 255. The NaOH OYT5 line list covers the 0 – 9000 cm−1 (wavelengths λ > 1.11 μm) range and contains almost 50 billion lines involving 7.9 million molecular states with rotational excitation up to J = 206. The OYT4 and OYT5 line lists are available from the ExoMol database at www.exomol.com and should greatly aid the study of hot rocky exoplanets.

scholarly journals ExoMol molecular line lists – XXXV. A rotation-vibration line list for hot ammonia

2019 ◽  
Vol 490 (4) ◽  
pp. 4638-4647 ◽  
Author(s):  
Phillip A Coles ◽  
Sergei N Yurchenko ◽  
Jonathan Tennyson
Keyword(s):  
Experimental Data ◽  
Dipole Moment ◽  
High Temperature ◽  
Potential Energy ◽  
Potential Energy Surface ◽  
Ab Initio ◽  
Data Base ◽  
Energy Surface ◽  
Molecular Line ◽  
Line List

ABSTRACT A new hot line list for 14NH3 is presented. The line list CoYuTe was constructed using an accurate, empirically refined potential energy surface and a CCSD(T)/aug-cc-pVQZ ab initio dipole moment surface of ammonia, previously reported. The line list is an improvement of the ammonia line list BYTe. The CoYuTe line list covers wavenumbers up to 20 000 cm−1, i.e. wavelengths beyond 0.5 μm for temperatures up to 1500 K. Comparisons with the high temperature experimental data from the literature show excellent agreement for wavenumbers below 6000 cm−1. The CoYuTe line list contains 16.9 billion transitions and is available from the ExoMol website (www.exomol.com) and the CDS data base.

scholarly journals ExoMol molecular line lists – XXXVII. Spectra of acetylene

2020 ◽  
Vol 493 (2) ◽  
pp. 1531-1545 ◽  
Author(s):  
Katy L Chubb ◽  
Jonathan Tennyson ◽  
Sergei N Yurchenko
Keyword(s):  
Angular Momentum ◽  
High Temperature ◽  
Electronic State ◽  
Energy Levels ◽  
Stellar Atmospheres ◽  
Ground Electronic State ◽  
Data Bases ◽  
Molecular Line ◽  
Line List ◽  
Maximum Value

ABSTRACT A new ro-vibrational line list for the ground electronic state of the main isotopologue of acetylene, 12C2H2, is computed as part of the ExoMol project. The aCeTY line list covers the transition wavenumbers up to 10 000 cm−1 (λ > 1 $\mu$m), with lower and upper energy levels up to 12 000 and 22 000 cm−1 considered, respectively. The calculations are performed up to a maximum value for the vibrational angular momentum, Kmax = Lmax  =  16, and maximum rotational angular momentum, J = 99. Higher values of J were not within the specified wavenumber window. The aCeTY line list is considered to be complete up to 2200 K, making it suitable for use in characterizing high-temperature exoplanet or cool stellar atmospheres. Einstein-A coefficients, which can directly be used to calculate intensities at a particular temperature, are computed for 4.3 billion (4 347 381 911) transitions between 5 million (5 160 803) energy levels. We make comparisons against other available data for 12C2H2, and demonstrate this to be the most complete line list available. The line list is available in electronic form from the online CDS and ExoMol data bases.

scholarly journals Exomol molecular line lists – VI. A high temperature line list for phosphorus nitride

2014 ◽  
Vol 445 (2) ◽  
pp. 1383-1391 ◽  
Author(s):  
Leo Yorke ◽  
Sergei N. Yurchenko ◽  
Lorenzo Lodi ◽  
Jonathan Tennyson
Keyword(s):  
High Temperature ◽  
Molecular Line ◽  
Line List ◽  
Temperature Line

Defect Complexes and Non-Equilibrium Processes Underlying the P-Type Doping of GaN

1998 ◽  
Vol 537 ◽  
Author(s):  
Fernando A. Reboredo ◽  
Sokrates T. Pantelides
Keyword(s):  
High Temperature ◽  
Experimental Evidence ◽  
First Principles ◽  
Final Anneal ◽  
First Principles Calculations ◽  
Defect Complexes ◽  
Equilibrium Processes ◽  
Open Questions ◽  
High Temperature Anneal ◽  
P Type

AbstractIt is well known that hydrogen plays a key role in p-type doping of GaN. It is believed that H passivates substitutional Mg during growth by forming a Mgs-N-Hi complex; in subsequent annealing, H is removed, resulting in p-type doping. Several open questions have remained, however, such as experimental evidence for other complexes involving Mg and H and difficulties in accounting for the relatively high-temperature anneal needed to remove H. We present first principles calculations in terms of which we show that the doping process is in fact significantly more complex. In particular, interstitial Mg plays a major role in limiting p-type doping. Overall, several substitutional/interstitial complexes form and can bind H, with vibrational frequencies that account for hitherto unidentified observed lines. We predict that these defects, which limit doping efficiency, can be eliminated by annealing in an atmosphere of H and N prior to the final anneal that removes H.

Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO2 Interface during Nitric Oxide Passivation – A First Principles Study

2016 ◽  
Vol 858 ◽  
pp. 465-468 ◽  
Author(s):  
D.P. Ettisserry ◽  
Neil Goldsman ◽  
Akin Akturk ◽  
Aivars J. Lelis
Keyword(s):  
Nitric Oxide ◽  
Silicon Dioxide ◽  
First Principles ◽  
Density Functional ◽  
Oxygen Vacancies ◽  
Functional Theory ◽  
Power Mosfets ◽  
Voltage Instability ◽  
Nitrogen Incorporation ◽  
Effective Mobility

In this work, we investigate the behavior of Nitrogen atoms at 4H-Silicon Carbide (4H-SiC)/Silicon dioxide (SiO2) interface during nitric oxide passivation using ab-initio Density Functional Theory. Our calculations suggest different possible energetically favorable and competing mechanisms by which nitrogen atoms could a) incorporate themselves into the oxide, just above the 4H-SiC substrate, and b) substitute for carbon atoms at the 4H-SiC surface. We attribute the former process to cause increased threshold voltage instability (hole traps), and the latter to result in improved effective mobility through channel counter-doping, apart from removing interface traps in 4H-SiC power MOSFETs. These results support recent electrical and XPS measurements. Additionally, Nitric Oxide passivation is shown to energetically favor re-oxidation of the 4H-SiC surface accompanied by the generation of oxygen vacancies under the conditions considered in this work.

Unraveling the selective etching mechanism of silicon nitride over silicon dioxide by phosphoric acid: First-principles study

2021 ◽  
Vol 551 ◽  
pp. 149376
Author(s):  
Soyong Park ◽  
Hyunwook Jung ◽  
Kyung-Ah Min ◽  
Junyeop Kim ◽  
Byungchan Han
Keyword(s):  
Silicon Nitride ◽  
Phosphoric Acid ◽  
Silicon Dioxide ◽  
First Principles ◽  
Selective Etching ◽  
Etching Mechanism ◽  
First Principles Study
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