Automatic ASET sensitivity evaluation of a custom-designed 180nm CMOS technology operational amplifier

Author(s):  
Andres Fontana ◽  
Sebastian M. Pazos ◽  
Fernando L. Aguirre ◽  
Felix Palumbo
2019 ◽  
Vol 28 (03) ◽  
pp. 1950052
Author(s):  
Ali Safari ◽  
Massoud Dousti ◽  
Mohammad Bagher Tavakoli

Graphene Field Effect Transistor (GFET) is a promising candidate for future high performance applications in the beyond CMOS roadmap for analog circuit applications. This paper presents a Verilog-A implementation of a monolayer graphene field-effect transistor (mGFET) model. The study of characteristic curves is carried out using advanced design system (ADS) tools. Validation of the model through comparison with measurements from the characteristic curves is carried out using Silvaco TCAD tools. Finally, the mGFET is used to design a GFET-based operational amplifier (Op-Amp). The GFET Op-Amp performances are tuned in term of the graphene channel length in order to obtain a reasonable gain and bandwidth. The main characteristics of the Op-Amp performance are compared with 0.18[Formula: see text][Formula: see text]m CMOS technology.


2020 ◽  
Vol 10 (1) ◽  
pp. 399 ◽  
Author(s):  
Kwonsang Han ◽  
Hyungseup Kim ◽  
Jaesung Kim ◽  
Donggeun You ◽  
Hyunwoo Heo ◽  
...  

This paper proposes a low noise readout integrated circuit (IC) with a chopper-stabilized multipath operational amplifier suitable for a Wheatstone bridge sensor. The input voltage of the readout IC changes due to a change in input resistance, and is efficiently amplified using a three-operational amplifier instrumentation amplifier (IA) structure with high input impedance and adjustable gain. Furthermore, a chopper-stabilized multipath structure is applied to the operational amplifier, and a ripple reduction loop (RRL) in the low frequency path (LFP) is employed to attenuate the ripple generated by the chopper stabilization technique. A 12-bit successive approximation register (SAR) analog-to-digital converter (ADC) is employed to convert the output voltage of the three-operational amplifier IA into digital code. The Wheatstone bridge readout IC is manufactured using a standard 0.18 µm complementary metal-oxide-semiconductor (CMOS) technology, drawing 833 µA current from a 1.8 V supply. The input range and the input referred noise are ±20 mV and 24.88 nV/√Hz, respectively.


2020 ◽  
Vol 140 (1) ◽  
pp. 9-15
Author(s):  
Koken Chin ◽  
Mamoru Ohsawa ◽  
Atsushi Kitajima ◽  
Yoshiaki Arai ◽  
Jun Yamashita ◽  
...  

2020 ◽  
Author(s):  
Lee Cha Sing ◽  
N. Ahmad ◽  
M. Mohamad Isa ◽  
F. A. S. Musa

This paper features a single-input single-output (SISO). The suggested circuit is depend on OTRA which is referred as operational transresistance amplifier. and OTRA recommended on the parameters of its increasing slew rate and large bandwidth as compared to conventional circuit containing operational amplifier. In this paper Bessel Higher order All Pass filter structure are described and their simulation is carried out in PSPICE with the help of 0.5μm CMOS technology and simulation result follows the theoretical approach.


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