1.2-V 101-GHz W-band power amplifier integrated in a 65-nm CMOS technology

2013 ◽  
Author(s):  
Uroschanit Yodprasit ◽  
Kosuke Katayama ◽  
Ryuichi Fujimoto ◽  
Mizuki Motoyoshi ◽  
Minoru Fujishima
Keyword(s):  
Power Amplifier ◽  
Cmos Technology ◽  
Band Power ◽  
W Band

scholarly journals Design of a W-Band Power Amplifier Using 65 nm CMOS Technology

2016 ◽  
Vol 27 (3) ◽  
pp. 330-333
Author(s):  
Jun-Seong Kim ◽  
Oh-yun Kwon ◽  
Reem Song ◽  
Byung-Sung Kim
Keyword(s):  
Power Amplifier ◽  
Cmos Technology ◽  
Band Power ◽  
W Band

scholarly journals Design of a V Band Power Amplifier Using 65 nm CMOS Technology

2013 ◽  
Vol 24 (4) ◽  
pp. 403-409
Author(s):  
Sungah Lee ◽  
Chenglin Cui ◽  
Seong-Kyun Kim ◽  
Byung-Sung Kim
Keyword(s):  
Power Amplifier ◽  
Cmos Technology ◽  
V Band ◽  
Band Power

W band power amplifier based on 1 µm InP DHBT

2014 ◽  
Author(s):  
Oupeng Li ◽  
Wei Cheng ◽  
Lei Wang ◽  
Haiyan Lu ◽  
Ruimin Xu
Keyword(s):  
Power Amplifier ◽  
Band Power ◽  
W Band

Spatially power-combined W-band power amplifier using stacked CMOS

2014 ◽  
Author(s):  
Jefy Jayamon ◽  
Ozan Gurbuz ◽  
Bassel Hanafi ◽  
Amir Agah ◽  
James Buckwalter ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Band Power ◽  
W Band

A 16.9 dBm InP DHBT W-band power amplifier with more than 20 dB gain

2013 ◽  
Vol 34 (7) ◽  
pp. 075005
Author(s):  
Hongfei Yao ◽  
Yuxiong Cao ◽  
Danyu Wu ◽  
Xiaoxi Ning ◽  
Yongbo Su ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Band Power ◽  
W Band

Wideband transformer-coupled E-band power amplifier in 90 nm CMOS

2012 ◽  
Vol 5 (1) ◽  
pp. 71-75 ◽  
Author(s):  
Igor Gertman ◽  
Eran Socher
Keyword(s):  
Power Amplifier ◽  
Cmos Technology ◽  
Wave Power ◽  
Peak Output Power ◽  
Low Leakage ◽  
Band Power ◽  
Bond Pads ◽  
Dc Current ◽  
Peak Gain ◽  
Better Than

In this work, the design of the wideband millimeter-wave power amplifier for multiband communication is presented. In order to achieve compact, simple and robust design, a differential cascade transformer-coupled topology is used. The amplifier is implemented in 90 nm low-leakage CMOS technology and achieves 3 dB bandwidth of 8 GHz (from 60 to 68 GHz) and a peak gain of 18 dB. The PO1dB is better than 5 dBm from 58 to 80 GHz, and peak output power is 11.9 dBm with 1 dB flatness from 62 to 77 GHz. The chip consumes an area of 0.25 mm2 including bond pads and DC current of 125 mA from a 2.2 V supply.

A 92–96 GHz W-band power amplifier

2012 ◽  
Author(s):  
Dan Zhong ◽  
Jun Xu ◽  
Mao Yan Wang ◽  
Gui Ping Li ◽  
Xiao Chuan Zhang
Keyword(s):  
Power Amplifier ◽  
Band Power ◽  
W Band
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