Wideband transformer-coupled E-band power amplifier in 90 nm CMOS
2012 ◽
Vol 5
(1)
◽
pp. 71-75
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Keyword(s):
In this work, the design of the wideband millimeter-wave power amplifier for multiband communication is presented. In order to achieve compact, simple and robust design, a differential cascade transformer-coupled topology is used. The amplifier is implemented in 90 nm low-leakage CMOS technology and achieves 3 dB bandwidth of 8 GHz (from 60 to 68 GHz) and a peak gain of 18 dB. The PO1dB is better than 5 dBm from 58 to 80 GHz, and peak output power is 11.9 dBm with 1 dB flatness from 62 to 77 GHz. The chip consumes an area of 0.25 mm2 including bond pads and DC current of 125 mA from a 2.2 V supply.
2013 ◽
Vol 24
(4)
◽
pp. 403-409
2016 ◽
Vol 27
(3)
◽
pp. 330-333
2019 ◽
pp. 1-9
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2016 ◽
Vol 11
(2)
◽
pp. 97-105
Keyword(s):
2019 ◽
Vol 29
(3)
◽
pp. 234-236
◽
2020 ◽
Vol 30
(1)
◽
pp. 106-108