Accelerated 3D full band self-consistent ensemble Monte Carlo device simulation utilizing intel MIC co-processors on tianhe II

2015 International Workshop on Computational Electronics (IWCE) ◽

10.1109/iwce.2015.7301990 ◽

2015 ◽

Cited By ~ 1

Author(s):

Longxiang Yin ◽

Minquaan Fang ◽

Lang Zeng ◽

Lilun Zhang ◽

Gang Du ◽

...

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Ensemble Monte Carlo ◽

Full Band ◽

Self Consistent ◽

Intel Mic ◽

Monte Carlo Device Simulation

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Self-consistent full-band Monte Carlo device simulation for strained nMOSFETs incorporating vertical quantization, multi-subband, and different channel orientation effects

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282837 ◽

2006 ◽

Cited By ~ 2

Author(s):

Masami Hane ◽

Takeo Ikezawa ◽

Michihito Kawada ◽

Tatsuya Ezaki ◽

Toyoji Yamamoto

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Orientation Effects ◽

Full Band ◽

Self Consistent ◽

Channel Orientation ◽

Monte Carlo Device Simulation

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Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues

2011 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2011.6035056 ◽

2011 ◽

Cited By ~ 18

Author(s):

Diego Guerra ◽

David K. Ferry ◽

Sthepen M. Goodnick ◽

Marco Saraniti ◽

Fabio A. Marino

Keyword(s):

Monte Carlo ◽

Millimeter Wave ◽

Device Simulation ◽

Wave Power ◽

Large Signal ◽

Full Band ◽

Gan Hemts ◽

Monte Carlo Device Simulation

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MOSFET hot-carrier induced gate current simulation by self-consistent silicon/oxide Monte Carlo device simulation

International Conferencre on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2002.1034559 ◽

2003 ◽

Cited By ~ 3

Author(s):

A. Ghetti

Keyword(s):

Monte Carlo ◽

Silicon Oxide ◽

Device Simulation ◽

Gate Current ◽

Hot Carrier ◽

Self Consistent ◽

Monte Carlo Device Simulation

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Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method

Journal of Semiconductors ◽

10.1088/1674-4926/31/8/084004 ◽

2010 ◽

Vol 31 (8) ◽

pp. 084004 ◽

Cited By ~ 4

Author(s):

Wei Kangliang ◽

Liu Xiaoyan ◽

Du Gang ◽

Han Ruqi

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Carrier Transport ◽

Ensemble Monte Carlo ◽

Full Band ◽

Self Consistent

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Accurate prediction of hot-carrier effects for a deep sub-μm CMOS technology based on inverse modeling and full band Monte Carlo device simulation

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) ◽

10.1109/sispad.1996.865273 ◽

2005 ◽

Cited By ~ 1

Author(s):

C. Jungemann ◽

S. Yamaguchi ◽

H. Goto

Keyword(s):

Monte Carlo ◽

Inverse Modeling ◽

Device Simulation ◽

Cmos Technology ◽

Accurate Prediction ◽

Hot Carrier ◽

Full Band ◽

Hot Carrier Effects ◽

Monte Carlo Device Simulation

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Large-signal mm-wave InAlN/GaN HEMT power amplifier characterization through self-consistent Harmonic Balance / Cellular Monte Carlo device simulation

2011 International Electron Devices Meeting ◽

10.1109/iedm.2011.6131668 ◽

2011 ◽

Cited By ~ 6

Author(s):

D. Guerra ◽

F. A. Marino ◽

D. K. Ferry ◽

S. M. Goodnick ◽

M. Saraniti ◽

...

Keyword(s):

Monte Carlo ◽

Power Amplifier ◽

Harmonic Balance ◽

Device Simulation ◽

Large Signal ◽

Gan Hemt ◽

Self Consistent ◽

Cellular Monte Carlo ◽

Monte Carlo Device Simulation

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Assessment of accuracy limitations of full band Monte Carlo device simulation

SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest ◽

10.1109/sispad.1997.621408 ◽

2002 ◽

Cited By ~ 14

Author(s):

F. Venturi ◽

A. Ghetti

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Full Band ◽

Monte Carlo Device Simulation

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Full-band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile

1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) ◽

10.1109/sispad.1999.799300 ◽

2003 ◽

Cited By ~ 1

Author(s):

S. Keith ◽

C. Jungemann ◽

S. Decker ◽

B. Neinhus ◽

M. Bartels ◽

...

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Sige Hbt ◽

Full Band ◽

Monte Carlo Device Simulation

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Spatial analysis of the electron transit time in a silicon/germanium heterojunction bipolar transistor by drift-diffusion, hydrodynamic, and full-band Monte Carlo device simulation

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) ◽

10.1109/sispad.2000.871202 ◽

2002 ◽

Cited By ~ 1

Author(s):

C. Jungemann ◽

B. Neinhus ◽

B. Meinerzhagen

Keyword(s):

Monte Carlo ◽

Spatial Analysis ◽

Transit Time ◽

Silicon Germanium ◽

Device Simulation ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Drift Diffusion ◽

Full Band ◽

Monte Carlo Device Simulation

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A new practical method to include recombination-generation process in self-consistent Monte Carlo device simulation

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) ◽

10.1109/sispad.1996.865274 ◽

2005 ◽

Cited By ~ 1

Author(s):

Gyoyoung Jin ◽

E.C. Kan ◽

R.W. Dutton

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Practical Method ◽

Generation Process ◽

Self Consistent ◽

Monte Carlo Device Simulation

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