monte carlo device simulation Latest Research Papers

Exact Correction of the Self-Force Problem in Monte Carlo Device Simulation

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2019.8870461 ◽

2019 ◽

Author(s):

Andrea Ghetti

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

The Self ◽

Self Force ◽

Force Problem ◽

Monte Carlo Device Simulation

Download Full-text

Accelerated 3D full band self-consistent ensemble Monte Carlo device simulation utilizing intel MIC co-processors on tianhe II

2015 International Workshop on Computational Electronics (IWCE) ◽

10.1109/iwce.2015.7301990 ◽

2015 ◽

Cited By ~ 1

Author(s):

Longxiang Yin ◽

Minquaan Fang ◽

Lang Zeng ◽

Lilun Zhang ◽

Gang Du ◽

...

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Ensemble Monte Carlo ◽

Full Band ◽

Self Consistent ◽

Intel Mic ◽

Monte Carlo Device Simulation

Download Full-text

Three dimemsional electro-thermal coupled Monte Carlo device simulation

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict.2014.7021520 ◽

2014 ◽

Author(s):

Xiaoyan Liu ◽

Kangliang Wei ◽

Longxiang Yin ◽

Gang Du ◽

Hai Jiang ◽

...

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Monte Carlo Device Simulation

Download Full-text

Large-signal mm-wave InAlN/GaN HEMT power amplifier characterization through self-consistent Harmonic Balance / Cellular Monte Carlo device simulation

2011 International Electron Devices Meeting ◽

10.1109/iedm.2011.6131668 ◽

2011 ◽

Cited By ~ 6

Author(s):

D. Guerra ◽

F. A. Marino ◽

D. K. Ferry ◽

S. M. Goodnick ◽

M. Saraniti ◽

...

Keyword(s):

Monte Carlo ◽

Power Amplifier ◽

Harmonic Balance ◽

Device Simulation ◽

Large Signal ◽

Gan Hemt ◽

Self Consistent ◽

Cellular Monte Carlo ◽

Monte Carlo Device Simulation

Download Full-text

Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues

2011 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2011.6035056 ◽

2011 ◽

Cited By ~ 18

Author(s):

Diego Guerra ◽

David K. Ferry ◽

Sthepen M. Goodnick ◽

Marco Saraniti ◽

Fabio A. Marino

Keyword(s):

Monte Carlo ◽

Millimeter Wave ◽

Device Simulation ◽

Wave Power ◽

Large Signal ◽

Full Band ◽

Gan Hemts ◽

Monte Carlo Device Simulation

Download Full-text

FinFET stress engineering using 3D mechanical stress and 2D Monte Carlo device simulation

ESSDERC 2008 - 38th European Solid-State Device Research Conference ◽

10.1109/essderc.2008.4681725 ◽

2008 ◽

Cited By ~ 3

Author(s):

F.M. Bufler ◽

L. Sponton ◽

A. Erlebach

Keyword(s):

Monte Carlo ◽

Mechanical Stress ◽

Device Simulation ◽

Stress Engineering ◽

Monte Carlo Device Simulation

Download Full-text

Spin-dependent injection model for Monte Carlo device simulation

Journal of Applied Physics ◽

10.1063/1.2986137 ◽

2008 ◽

Vol 104 (7) ◽

pp. 073702 ◽

Cited By ~ 2

Author(s):

H. López ◽

X. Oriols ◽

J. Suñé ◽

X. Cartoixà

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Injection Model ◽

Monte Carlo Device Simulation

Download Full-text

Universal Method for Extracting Transport Parameters From Monte Carlo Device Simulation

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.906937 ◽

2007 ◽

Vol 54 (11) ◽

pp. 3092-3096 ◽

Cited By ~ 1

Author(s):

Simon C. Brugger ◽

Andreas Schenk

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Universal Method ◽

Transport Parameters ◽

Monte Carlo Device Simulation

Download Full-text

Self-consistent full-band Monte Carlo device simulation for strained nMOSFETs incorporating vertical quantization, multi-subband, and different channel orientation effects

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282837 ◽

2006 ◽

Cited By ~ 2

Author(s):

Masami Hane ◽

Takeo Ikezawa ◽

Michihito Kawada ◽

Tatsuya Ezaki ◽

Toyoji Yamamoto

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Orientation Effects ◽

Full Band ◽

Self Consistent ◽

Channel Orientation ◽

Monte Carlo Device Simulation

Download Full-text

3D Monte Carlo Device Simulation of NanoWire MOSFETs including Quantum Mechanical and Strain Effects

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282840 ◽

2006 ◽

Cited By ~ 4

Author(s):

Andrea Ghetti ◽

Denis Rideau

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Quantum Mechanical ◽

Strain Effects ◽

3D Monte Carlo ◽

Nanowire Mosfets ◽

Monte Carlo Device Simulation

Download Full-text

monte carlo device simulation
Recently Published Documents

TOTAL DOCUMENTS

H-INDEX

Exact Correction of the Self-Force Problem in Monte Carlo Device Simulation

Accelerated 3D full band self-consistent ensemble Monte Carlo device simulation utilizing intel MIC co-processors on tianhe II

Three dimemsional electro-thermal coupled Monte Carlo device simulation

Large-signal mm-wave InAlN/GaN HEMT power amplifier characterization through self-consistent Harmonic Balance / Cellular Monte Carlo device simulation

Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues

FinFET stress engineering using 3D mechanical stress and 2D Monte Carlo device simulation

Spin-dependent injection model for Monte Carlo device simulation

Universal Method for Extracting Transport Parameters From Monte Carlo Device Simulation

Self-consistent full-band Monte Carlo device simulation for strained nMOSFETs incorporating vertical quantization, multi-subband, and different channel orientation effects

3D Monte Carlo Device Simulation of NanoWire MOSFETs including Quantum Mechanical and Strain Effects

Export Citation Format

monte carlo device simulationRecently Published Documents

TOTAL DOCUMENTS

H-INDEX

Exact Correction of the Self-Force Problem in Monte Carlo Device Simulation

Accelerated 3D full band self-consistent ensemble Monte Carlo device simulation utilizing intel MIC co-processors on tianhe II

Three dimemsional electro-thermal coupled Monte Carlo device simulation

Large-signal mm-wave InAlN/GaN HEMT power amplifier characterization through self-consistent Harmonic Balance / Cellular Monte Carlo device simulation

Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues

FinFET stress engineering using 3D mechanical stress and 2D Monte Carlo device simulation

Spin-dependent injection model for Monte Carlo device simulation

Universal Method for Extracting Transport Parameters From Monte Carlo Device Simulation

Self-consistent full-band Monte Carlo device simulation for strained nMOSFETs incorporating vertical quantization, multi-subband, and different channel orientation effects

3D Monte Carlo Device Simulation of NanoWire MOSFETs including Quantum Mechanical and Strain Effects

monte carlo device simulation
Recently Published Documents