scholarly journals Deep Source Metal Trenches in GaN-on-Si HEMTs for Relieving Current Collapse

2021 ◽  
pp. 1-1
Author(s):  
Ji-Xuan Yang ◽  
Dai-Jie Lin ◽  
Yuh-Renn Wu ◽  
Jian-Jang Huang
Keyword(s):  
Current Collapse ◽  
Deep Source ◽  
Gan On Si

scholarly journals Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 842 ◽  
Author(s):  
Myoung-Jin Kang ◽  
Hyun-Seop Kim ◽  
Ho-Young Cha ◽  
Kwang-Seok Seo
Keyword(s):  
Chemical Vapor ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Breakdown Field ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Passivation Process ◽  
Gan On Si ◽  
Sinx Film

We optimized a silicon nitride (SiNx) passivation process using a catalytic-chemical vapor deposition (Cat-CVD) system to suppress the current collapse phenomenon of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs). The optimized Cat-CVD SiNx film exhibited a high film density of 2.7 g/cm3 with a low wet etch rate (buffered oxide etchant (BOE) 10:1) of 2 nm/min and a breakdown field of 8.2 MV/cm. The AlGaN/GaN-on-Si HEMT fabricated by the optimized Cat-CVD SiNx passivation process, which had a gate length of 1.5 μm and a source-to-drain distance of 6 μm, exhibited the maximum drain current density of 670 mA/mm and the maximum transconductance of 162 mS/mm with negligible hysteresis. We found that the optimized SiNx film had positive charges, which were responsible for suppressing the current collapse phenomenon.

Improved Current Collapse Phenomenon in AlGaN/GaN-on-Si HFETs Using Sacrificial GaOx Process

2013 ◽  
Author(s):  
J.G. Lee ◽  
S.W. Han ◽  
B.R. Park ◽  
K.S Seo ◽  
H. Kim ◽  
...  
Keyword(s):  
Current Collapse ◽  
Gan On Si

High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiNxsurface passivation layer deposited by low pressure CVD

2014 ◽  
Vol 53 (8S3) ◽  
pp. 08NH02 ◽  
Author(s):  
Sung-Woon Moon ◽  
Jongsub Lee ◽  
Deokwon Seo ◽  
Sungdal Jung ◽  
Hong Goo Choi ◽  
...  
Keyword(s):  
High Voltage ◽  
Low Pressure ◽  
Passivation Layer ◽  
Current Collapse ◽  
Gan On Si

Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices

2017 ◽  
Vol 64 (12) ◽  
pp. 5048-5056 ◽  
Author(s):  
Shu Yang ◽  
Chunhua Zhou ◽  
Shaowen Han ◽  
Jin Wei ◽  
Kuang Sheng ◽  
...  
Keyword(s):  
Substrate Bias ◽  
Power Devices ◽  
Current Collapse ◽  
Gan On Si

HVPE-GROWN AlGaN/GaN HEMTs

2003 ◽  
Vol 764 ◽  
Author(s):  
B. Luo ◽  
F. Ren ◽  
M. A. Mastro ◽  
D. Tsvetkov ◽  
A. Pechnikov ◽  
...  
Keyword(s):  
High Electron Mobility Transistors ◽  
Hydride Vapor Phase Epitaxy ◽  
Root Mean Square Roughness ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Collapse Characteristics ◽  
Capacitance Voltage ◽  
Source Current ◽  
Measurement Area

AbstractHigh quality undoped AlGaN/GaN high electron mobility transistors(HEMTs) structures have been gorwn by Hydride Vapor Phase Epitaxy (HVPE). The morphology of the films grown on Al2O3 substrates is excellent with root-mean-square roughness of ∼0.2nm over 10×10μm2 measurement area. Capacitance-voltage measurements show formation of dense sheet of charge at the AlGaN/GaN interface. HEMTs with 1μm gate length fabricated on these structures show transconductances in excess of 110 mS/mm and drain-source current above 0.6A/mm. Gate lag measurements show similar current collapse characteristics to HEMTs fabricated in MBE- or MOCVD grown material.

Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination

2021 ◽  
Vol 118 (24) ◽  
pp. 243501
Author(s):  
Xiaolu Guo ◽  
Yaozong Zhong ◽  
Xin Chen ◽  
Yu Zhou ◽  
Shuai Su ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Gan On Si
Sign in / Sign up

Export Citation Format

Share Document