Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in ${\rm HfGeO}_{\rm x}$ Interfacial Layer Formed by In Situ Desorption

2014 ◽  
Vol 35 (5) ◽  
pp. 509-511 ◽  
Author(s):  
Chen-Chien Li ◽  
Kuei-Shu Chang-Liao ◽  
Li-Jung Liu ◽  
Tzu-Min Lee ◽  
Chung-Hao Fu ◽  
...  
Keyword(s):  
Oxidation State ◽  
Interfacial Layer ◽  
Electrical Characteristics ◽  
High Oxidation State ◽  
Mos Devices ◽  
High Oxidation

Very Low EOT in Ge MOS Devices with High Oxidation State Interfacial Layer

2014 ◽  
Author(s):  
C.H. Lin ◽  
K.S. Chang-Liao ◽  
C.C. Li ◽  
L.J. Liu ◽  
T.M. Lee
Keyword(s):  
Oxidation State ◽  
Interfacial Layer ◽  
High Oxidation State ◽  
Mos Devices ◽  
High Oxidation

Very low EOT and high oxidation state interfacial layer in Ge MOS devices

2014 ◽  
Author(s):  
Szu-Chun Yu ◽  
Kuei-Shu Chang-Liao ◽  
Mong-Chi Li ◽  
Wei-Fong Chi ◽  
Chen-Chien Li ◽  
...  
Keyword(s):  
Oxidation State ◽  
Interfacial Layer ◽  
High Oxidation State ◽  
Mos Devices ◽  
High Oxidation
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