A reliable high performance nano SOI MOSFET by considering quadruple silicon zones

Author(s):  
Meysam Zareiee ◽  
Milad Abtin
Keyword(s):  
2010 ◽  
Vol 7 (5) ◽  
pp. 371-376 ◽  
Author(s):  
Farzan Jazayeri ◽  
Farshid Raissi ◽  
Behjat Forouzandeh

1989 ◽  
Vol 25 (6) ◽  
pp. 394 ◽  
Author(s):  
X.L. Xu ◽  
Q.Y. Tong

2018 ◽  
Vol 7 (2.8) ◽  
pp. 191
Author(s):  
Arjimand Ashaf ◽  
Manisha Tyagi ◽  
Prashant Mani

In this paper, we are presenting a rigorous study about SOI MOSFET devices development. The development of SOI devices based on gate structure from single gate to surround gate is presented in this paper. We compared the various electrical characteristics between Single gate, double gate, and bulk and also discussed the device modeling based on surround gate structure.


Author(s):  
Jianning Wang ◽  
Jason Roland ◽  
Jeremy Popp ◽  
Xunyu Zhu ◽  
Chris Hutchens ◽  
...  
Keyword(s):  

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