A near-threshold ASK demodulator for ultra-low-power implantable biomedical microsystems

With the existing technology and survey it indicates the increasing the number of transistors count and exploring methodologies leads to innovative design in memories. In general SRAM occupies considerable amount of area and less performance due to leakage power that limits the operation under sub threshold region. The power consumption of the circuit design is primarily depends on the switching activity of the transistor that leads to increasing of leakage current at near or subthreshold operation. Some of the challenges like PVT variations, SEU, SEE, and RDF lead to reduction in performance, increasing the power, BTI, sizing, delay and yield. The research work in this paper primarily describes the challenges with the technology and effects on CMOS & Finfet designs. The second aspect of the paper is to represents the design methodologies of CMOS & FinFET models and its operation. The third part of the paper explains design tradeoff of FinFET SRAM. Final sections present a comparison of high performance, low power at normal and near threshold operation. The Comparisons is made on the basis of process parameters and made a conclusion with circuit functionality, reliability under different technologies. FinFET based SRAM’s are the emerging memory trends by the performance under or near sub-threshold operation with the minimal variation in the leakage current, minimal gate delay is an alternate solution to the traditional CMOS memory designs as showed in the present work.

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Near-Threshold Flip-Flops for Ultra Low-Power Applications

Lecture Notes in Electrical Engineering - Future Intelligent Information Systems ◽

10.1007/978-3-642-19706-2_7 ◽

2011 ◽

pp. 47-54 ◽

Cited By ~ 1

Author(s):

Xiaoying Yu ◽

Jianping Hu

Keyword(s):

Low Power ◽

Ultra Low Power ◽

Near Threshold

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Evaluating Cell Library Sizing Methodologies for Ultra-Low Power Near-Threshold Operation in Bulk CMOS

2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS) ◽

10.1109/lascas45839.2020.9069031 ◽

2020 ◽

Author(s):

Rodrigo N. Wuerdig ◽

Vitor G. Lima ◽

Filipe Baumgratz ◽

Rafael Soares ◽

Sergio Bampi

Keyword(s):

Low Power ◽

Ultra Low Power ◽

Cell Library ◽

Near Threshold

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A 400 μW Near-Threshold Feedback Class-C VCO with Auto Amplitude Control

Journal of Circuits System and Computers ◽

10.1142/s021812661850072x ◽

2018 ◽

Vol 27 (05) ◽

pp. 1850072

Author(s):

Chenggang Yan ◽

Chen Hu

Keyword(s):

Low Power ◽

Phase Noise ◽

Feedback Loop ◽

Cmos Process ◽

Voltage Controlled Oscillator ◽

Amplitude Control ◽

Ultra Low Power ◽

Class C ◽

Low Phase Noise ◽

Near Threshold

A 400[Formula: see text][Formula: see text]W near-threshold supply class-C voltage controlled oscillator (VCO) with amplitude feedback loop and auto amplitude control (AAC) is proposed in this paper. The amplitude feedback loop and AAC ensure the robust startup of the proposed VCO and automatically adapts it to the class-C mode in steady state. Consequently, ultra-low power can be achieved in AAC mode and low phase noise, high swing can be achieved in AAC off mode. The proposed VCO with AAC gets ultra-low power consumption by limiting the oscillating amplitude and driving the proposed VCO into the deep Class-C mode. Additionally, the peak value detector is employed in this work to boost the controlling voltage of capacitors bank. Thus, a low on resistance of switch transistors is obtained, which increases the Q value of capacitors bank. The simulated phase noise is [Formula: see text]124.5[Formula: see text]dBc/Hz at 1[Formula: see text]MHz offset with the 1.16[Formula: see text]GHz oscillation frequency. In this case, the figure-of-merit including tuning range (FOMT) of proposed VCO is [Formula: see text]195[Formula: see text]dBc/Hz. The proposed VCO is fabricated in SMIC 40[Formula: see text]nm CMOS process and consumes 0.62[Formula: see text]mA from 0.65[Formula: see text]V supply. The measured phase noise is [Formula: see text]109[Formula: see text]dBc/Hz and FOMT is [Formula: see text]179[Formula: see text]dBc/Hz.

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