Study of particulate formation and its control by a radio frequency power modulation in the reactive ion etching process of SiO2 with CF4/H2 plasma

1997 ◽  
Vol 15 (1) ◽  
pp. 66-71 ◽  
Author(s):  
Chung-Kyu Yeon ◽  
Ki-Woong Whang
Keyword(s):  
Radio Frequency ◽  
Reactive Ion Etching ◽  
Radio Frequency Power ◽  
Etching Process ◽  
Ion Etching ◽  
Power Modulation ◽  
Frequency Power

scholarly journals High performance metal–insulator–graphene diodes for radio frequency power detection application

Nanoscale ◽  
2017 ◽  
Vol 9 (33) ◽  
pp. 11944-11950 ◽  
Author(s):  
Mehrdad Shaygan ◽  
Zhenxing Wang ◽  
Mohamed Saeed Elsayed ◽  
Martin Otto ◽  
Giuseppe Iannaccone ◽  
...  
Keyword(s):  
Radio Frequency ◽  
High Performance ◽  
Radio Frequency Power ◽  
Metal Insulator ◽  
Frequency Power

Metal–insulator–graphene diodes are proved to be able to deliver high performance, and meanwhile are suitable for radiofrequency power detection.

Radio Observations of Two Large Solar Disturbances

1951 ◽  
Vol 4 (1) ◽  
pp. 51
Author(s):  
JV Hindman ◽  
AG Little ◽  
R Payne-Scott ◽  
DE Yabsley ◽  
CW Allen
Keyword(s):  
Radio Frequency ◽  
Solar Flares ◽  
Radio Frequency Power ◽  
Frequency Range ◽  
Power Flux ◽  
Apparent Position ◽  
Radio Receivers ◽  
Solar Origin ◽  
Solar Disturbances ◽  
Frequency Power

On February 17 and 21-22, 1950, two exceptionally large radio-frequency disturbances of solar origin were observed on seven radio receivers working in the frequency range from 62 to 9400 Mc/s. At each of the frequencies the radio-frequency power flux was recorded continuously during the disturbance and at several frequencies the polarization of the radiation was examined. The apparent position of the origin of the radiation was determined at one frequency. The time of commencement and the duration of the disturbances at the different frequencies were compared with each other and with those of associated phenomena, solar flares, radio fade-outs, and geomagnetic effects. The two disturbances show marked similarities and marked differences ; these are summarized.

Modeling and simulation of the lag effect in a deep reactive ion etching process

2006 ◽  
Vol 16 (12) ◽  
pp. 2570-2575 ◽  
Author(s):  
Yiyong Tan ◽  
Rongchun Zhou ◽  
Haixia Zhang ◽  
Guizhang Lu ◽  
Zhihong Li
Keyword(s):  
Modeling And Simulation ◽  
Reactive Ion Etching ◽  
Etching Process ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
Lag Effect
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