scholarly journals Application of Ni-doped ZnO nanorods in surface acoustic wave ultraviolet photodetectors

Author(s):  
Walter Water ◽  
Cheng-Je Li ◽  
Liang-Wen Ji

A surface acoustic wave ultraviolet photodetector was fabricated on a ZnO thin film with pure and Ni-doped ZnO nanorods deposited on a Si substrate. Piezoelectric ZnO thin films were grown on Si through radio-frequency magnetron sputtering, and ZnO nanorods were synthesized on ZnO thin films by using the hydrothermal method. The crystalline structure, surface morphology, and luminescent characteristics of ZnO films and nanorods were examined using X-ray diffraction and photoluminescence spectrometers and scanning electron microscope. The performance of the surface acoustic wave photodetector was evaluated using the variations in surface capacitance, insertion loss, and phase shift. ZnO nanorods became shorter and thicker with an increase in the concentration of Ni doping; however, the variations in surface capacitance of Ni-doped ZnO nanorods were greater than those of pure ZnO nanorods obtained under ultraviolet irradiation. Devices with Ni-doped ZnO nanorods exhibited larger shifts in insertion loss and phase than those with pure ZnO nanorods did.

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 252 ◽  
Author(s):  
A. M. Alsaad ◽  
A. A. Ahmad ◽  
I. A. Qattan ◽  
Qais M. Al-Bataineh ◽  
Zaid Albataineh

Undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films at 3% doping concentration level are dip-coated on glass substrates using a sol-gel technique. The optical properties of the as-prepared thin films are investigated using UV–Vis spectrophotometer measurements. Transmittance of all investigated thin films is found to attain high values of ≥80% in the visible region. We found that the index of refraction of undoped ZnO films exhibits values ranging between 1.6 and 2.2 and approximately match that of bulk ZnO. Furthermore, we measure and interpret nonlinear optical parameters and the electrical and optical conductivities of the investigated thin films to obtain a deeper insight from fundamental and practical points of view. In addition, the structural properties of all studied thin film samples are investigated using the XRD technique. In particular, undoped ZnO thin film is found to exhibit a hexagonal structure. Due to the large difference in size of boron and indium compared with that of zinc, doping ZnO thin films with these two elements is expected to cause a phase transition. However, Al-doped ZnO and Ga-doped ZnO thin films preserve the hexagonal phase. Moreover, as boron and indium are introduced in ZnO thin films, the grain size increases. On the other hand, grain size is found to decrease upon doping ZnO with aluminum and gallium. The drastic enhancement of optical properties of annealed dip-synthesized undoped ZnO thin films upon doping with group III metals paves the way to tune these properties in a skillful manner, in order to be used as key candidate materials in the fabrication of modern optoelectronic devices.


2014 ◽  
Vol 685 ◽  
pp. 3-6
Author(s):  
Ying Lian Wang ◽  
Jun Yao Ye

Pure ZnO thin films and Ag doped ZnO thin films were prepared on quartz substrates by sol-gel process. Structural features and UV absorption spectrum have been studied by XRD and UV-Vis-Nir scanning spectrophotometer. Taking phenol as pollutants, further study of the effect of different annealing temperature and Ag dopant amount of ZnO films on photocatalytic properties was carried out. The results showed that, the optimal annealing temperature on photocatalytic degradation of phenol in this experiment was 300 °C, the best molar ratio of ZnO and Ag was 30:1, which was better than pure ZnO film greatly. Excellent adhesion, recyclable and efficient degradation Ag doped ZnO thin films were found in this experiment.


2015 ◽  
Vol 773-774 ◽  
pp. 739-743
Author(s):  
A.N. Afaah ◽  
N.A.M. Asib ◽  
Aadila Aziz ◽  
Ruziana Mohamed ◽  
Kevin Alvin Eswar ◽  
...  

Mist-atomization deposition method was applied in order to grow ZnO nanoparticles on Au-seeded glass substrates acting as seeded template. Ag doped ZnO thin films were deposited on ZnO seeded templates by solution-immersion method. The influence of Ag doping content on the optical and Raman scattering properties of ZnO films were systematically investigated by UV-Vis transmittance measurement measured by ultra-violet visible spectroscopy (UV-Vis) and Raman scattering spectrum measured by Raman spectroscopy under room temperature. From UV-Vis transmittance measurement, the incorporation of Ag dopant to the ZnO makes the transmittance wavelength shifted to the shorter wavelength as compared to the pure ZnO. From Raman spectra, 4 cm-1 downshift is observed in Ag-doped thin films as compared to pure ZnO thin films. This Raman peak shift shows that a tensile stress existed in the Ag-doped ZnO film.


2001 ◽  
Vol 398-399 ◽  
pp. 641-646 ◽  
Author(s):  
Jin-Bock Lee ◽  
Hye-Jung Lee ◽  
Soo-Hyung Seo ◽  
Jin-Seok Park

Author(s):  
Sema Kurtaran ◽  
Serhat Aldağ ◽  
Göksu Öföfoğlu

Ga doped ZnO thin films were formed by the Ultrasonic Chemical Spray Pyrolysis method onto substrates using zinc acetate and gallium (III) nitrate hydrate as precursors. The structural, optical, surface and electrical properties were studied as a function of increasing Ga doping concentration from 0 to 6 at %. Structural studies were shown polycrystalline with a hexagonal crystal structure. The transparency in the visible range was around 85% for thin film deposited using 6 at % Ga doping. With the aim of determining surface images and surface roughness of the films atomic force microscope images were taken. Ga doping of ZnO thin films could markedly decrease surface roughness. Electrical resistivity was determined by four point method. The resistivity 2.0% Ga doped ZnO film was the lowest resistivity of 1.7 cm. In the photoluminescence measurements of the films, existence of UV and defect emission band was observed. As a result, Ga doped ZnO films have advanced properties and promising materials for solar cells.


2018 ◽  
Vol 6 (26) ◽  
pp. 12682-12692 ◽  
Author(s):  
Arreerat Jiamprasertboon ◽  
Michael J. Powell ◽  
Sebastian C. Dixon ◽  
Raul Quesada-Cabrera ◽  
Abdullah M. Alotaibi ◽  
...  

Cl-doped ZnO films, grown via aerosol-assisted CVD, can function as both TCOs and photocatalysts.


2014 ◽  
Vol 38 (1) ◽  
pp. 93-96
Author(s):  
E Hoq ◽  
MRA Bhuiyan ◽  
J Begum

Sb doped ZnO thin films having various thicknesses have been prepared onto glass substrate by using thermal evaporation method. The atomic compositions of the grown films have been determined by Energy Dispersive Analysis of X-ray (EDAX) method. The optical properties were measured by using a UV-VIS-NIR spectrophotometer (300 to 2500 nm). The EDAX analysis revealed that Sb is doped into the ZnO films. Optical properties showed high absorption coefficient (~105/cm) that direct allowed transition band gap. The optical band gap of the ZnO thin films became reduced due to the doping of Sb. DOI: http://dx.doi.org/10.3329/jbas.v38i1.20217 Journal of Bangladesh Academy of Sciences, Vol. 38, No. 1, 93-96, 2014


2012 ◽  
Vol 33 (3) ◽  
pp. 328-333
Author(s):  
刘凤娟 LIU Feng-juan ◽  
胡佐富 HU Zuo-fu ◽  
李振军 LI Zhen-jun ◽  
张希清 ZHANG Xi-qing

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