Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

2010 ◽  
Vol 3 (8) ◽  
pp. 081001 ◽  
Author(s):  
Yu Saitoh ◽  
Kazuhide Sumiyoshi ◽  
Masaya Okada ◽  
Taku Horii ◽  
Tomihito Miyazaki ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
High Mobility ◽  
Schottky Barrier Diodes ◽  
High Breakdown Voltage ◽  
Low Dislocation Density

Diamond Schottky barrier diodes with floating metal rings for high breakdown voltage

2019 ◽  
Vol 97 ◽  
pp. 101-105 ◽  
Author(s):  
Juan Wang ◽  
Dan Zhao ◽  
Wei Wang ◽  
Xiaofan Zhang ◽  
Yanfeng Wang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Schottky Barrier Diodes ◽  
High Breakdown Voltage ◽  
Metal Rings

High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure

2009 ◽  
Vol 615-617 ◽  
pp. 963-966 ◽  
Author(s):  
Taku Horii ◽  
Tomihito Miyazaki ◽  
Yu Saito ◽  
Shin Hashimoto ◽  
Tatsuya Tanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Schottky Barrier Diodes ◽  
Field Plate ◽  
Forward Current ◽  
Low Dislocation Density ◽  
Current Voltage ◽  
Dislocation Densities ◽  
Current Voltage Characteristics

Gallium nitride (GaN) vertical Schottky barrier diodes (SBDs) with a SiNx field plate (FP) structure on low-dislocation-density GaN substrates have been designed and fabricated. We have successfully achieved the SBD breakdown voltage (Vb) of 680V with the FP structure, in contrast to that of 400V without the FP structure. There was no difference in the forward current-voltage characteristics with a specific on-resistance (Ron) of 1.1mcm2. The figure of merit V2b/Ron of the SBD with the FP structure was 420MWcm-2. The FP structure and the high quality drift layers grown on the GaN substrates with low dislocation densities have greatly contributed to the obtained results.

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