Design of High Power Supply Rejection Ratio Complementary Metal-Oxide-Semiconductor Bandgap Voltage Reference Using Single Node Approach

2019 ◽  
Vol 17 (10) ◽  
pp. 777-783
Author(s):  
Shishu Pal ◽  
Ashutosh Nandi

This paper describes a compact, low voltage and high power supply rejection ratio (PSRR) Bandgap voltage reference circuit by using subthreshold MOSFETs. The proposed reference circuit is implemented using 0.18 μm CMOS technology. The circuit simulation is performed using the Cadence Spectre and Synopsys Hspice. The circuit generates the mean output reference voltage of 164 mV and temperature coefficient of 15.5 ppm/°C when temperature is swept from –40 °C to 120 °C at power supply of 1.2 V. For better PSRR, a feed forward mechanism is used. The proposed design has only single transistor for start-up circuit. The measured settling time for output reference voltage is observed to be less than 4 μs. No filtering capacitor is used to improve the PSRR, which is –97 dB up to 1 MHz and subsequently reduces to –47.5 dB at 158 MHz.

Author(s):  
Anass SLAMTI ◽  
Youness MEHDAOUI ◽  
Driss CHENOUNI ◽  
Zakia LAKHLIAI

<span lang="EN-US">A sub-1V opamp based β-multiplier CMOS bandgap voltage reference (BGVR) with high power supply rejection ratio (PSRR) and low temperature coefficient (TC) is proposed in this paper. A current mode regulator scheme is inserted to isolate the supply voltage of the operational amplifier (opamp) and the supply voltage of the BGVR core from the supply voltage source in order to reduce ripple sensitivity and to achieve a high PSRR. The proposed circuit is designed and simulated in 0.18-μm standard CMOS technology. The proposed voltage reference delivers an output voltage of 634.6mV at 27°C. Tthe measurement temperature coefficient is 22,3ppm/°C over temperature range -40°C to 140°C, power supply rejection ratio is -93dB at 10kHz and -71dB at 1MHz and a line regulation of 104μV/V is achieved over supply voltage range 1.2V to 1.8V. The layout area of the proposed circuit is 0.0337mm<sup>2</sup>. The proposed sub-1V bandgap voltage reference can be used as an internal voltage reference in low power LDO regulators and switching regulators.</span>


2011 ◽  
Vol 483 ◽  
pp. 481-486 ◽  
Author(s):  
Xiao Wei Liu ◽  
Bing Jun Lv ◽  
Peng Fei Wang ◽  
Liang Yin ◽  
Na Xu

The reference is an important part in the accelerometer system. With the development of science and technology, the request of the performance of accelerometers is increasingly higher and the precision of reference directly affects the performance of accelerometers. Therefore, a reference voltage applicable to accelerometers is presented based on the analysis of basic principles of conventional bandgap reference (BGR) in this paper. A high-order curvature compensation technique, which uses a temperature dependent resistor ratio generated by a high poly resistor and a nwell resistor, effectively serves to reduce temperature coefficient of proposed reference voltage circuit and to a large extent improve its performance. To achieve a high power supply rejection ratio (PSRR) over a broad frequency range, a pre-regulator is introduced to remain the supply voltage of the core circuit of BGR relatively independent of the global supply voltage. The proposed circuitry is designed in standard 2.0μm CMOS process. The simulated result shows that the average temperature coefficient is less than 2ppm/°C in the temperature range from -40 to 120°C. The improvement on temperature coefficient (TC) is about 10 times reduction compared to the conventional approach. And the PSR at DC frequency and 1kHz achieves -107 and -71dB respectively at 9.0V supply voltage.


2014 ◽  
Vol 644-650 ◽  
pp. 3575-3578
Author(s):  
Zheng Da Li ◽  
Lin Xie

This paper designed a new band-gap voltage reference circuit with two-stage temperature compensation.It realizes non-linear temperature compensation by using NMOS-pipe leakage current and increases the power supply rejection ratio of the band-gap voltage reference source by introducing negative feedback between the operational amplifier and the power supply. What is more, the paper simulates the band-gap voltage reference source based on CSMC 0.5μm CMOS technique. The result as follow: the band-gap voltage reference source has the temperature coefficient of 8.2ppm/oC among-40-120oC with the supply voltage of 3V, the low-frequency power supply rejection ratio is 83dBat 27oC and the power supply rejection ratio is 71dB in 1KHz, the output voltage regulation is 1.05mV/V in the supply voltage range from 2.4V to 5V.


2016 ◽  
Vol 25 (11) ◽  
pp. 1650147 ◽  
Author(s):  
Hongbing Wu ◽  
Hongxia Liu

This paper presents a bandgap reference (BGR) with the characteristics of curvature-compensation and high power supply rejection ratio (PSRR). To achieve a better performance, the base current of BJT is injected to a small segment of resistor string to flatten the temperature variation, and a pre-regulator of the power supply is implemented to improve the PSRR. The circuits, designed in 0.18[Formula: see text][Formula: see text]m BCD technology, exhibit an average voltage of 1.212[Formula: see text]V with temperature coefficient of 2.0[Formula: see text]ppm/[Formula: see text] in the range from [Formula: see text] to 110[Formula: see text] at typical condition, and a power supply rejection ratio of [Formula: see text][Formula: see text]dB at low frequency. After 4-bit trimming, Monte Carlo simulation results show that the proposed design gets an accuracy of 0.29%, with a variation of [Formula: see text][Formula: see text]mV. The active design area is 160[Formula: see text][Formula: see text]m, and the power supply current is about 8.2[Formula: see text][Formula: see text]A.


2013 ◽  
Vol 310 ◽  
pp. 448-452
Author(s):  
Zhi Chao Zhao ◽  
Tie Feng Wu ◽  
Jing Li ◽  
Li Min Li ◽  
Qie Pan ◽  
...  

In order to provide steady voltage for PWM controller, a design of bipolar voltage reference circuit with high performance is presented. The circuit based on the compensation principle between Zener diode and B-E junction of triode is used in PWM controller and can bring out multi-way steady voltages, moreover, there is a high power supply rejection ratio (PSRR) and low temperature dependence. The results of simulation and test in Candence with bipolar process of HuaYue SB45 show that the temperature coefficient is about 1.2ppm/°C in the temperature range -55~125°C. The line regulation is about 0.4mV/V in 8~30V and the PSRR is 77.54dB. The design of circuit can satisfy the requirements of PWM controller.


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