Improving mobility of silicon metal-oxide–semiconductor devices for quantum dots by high vacuum activation annealing
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2010 ◽
Vol 54
(9)
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pp. 965-971
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2009 ◽
Vol 27
(3)
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pp. 1261
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2011 ◽
Vol 32
(7)
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pp. 076001
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2010 ◽
Vol 242
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pp. 012010
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