Diffusion in Semiconductors by Using Fourier Series Expansion Technique
Keyword(s):
Doping by diffusion is still one of acceptable and important methods that have essential technological applications. A theoretical approach to study diffusion in semi-conductors is introduced. The diffusion equation together with Fick's law and mass balance equation are solved to obtain the concentration function and the mass penetration depth using Fourier Series expansion technique. Doping of indium, phosphorus, gallium and Arsenic in Silicon as illustrative examples are given.
2012 ◽
Vol 132
(3)
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pp. 366-373
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2014 ◽
Vol 5
(1-4)
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pp. 121-128
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1999 ◽
Vol 32
(4)
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pp. L57-L62
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1995 ◽
Vol 33
(4)
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pp. 194-203
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1995 ◽
Vol 02
(04)
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pp. 489-494
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2019 ◽
Vol 487
(1)
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pp. 729-736
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2005 ◽
Vol 495-497
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pp. 1565-1572
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