An Efficient Ultrasonic-Assisted Synthesis and Nonlinear Optical Property of Donor (D) -π-Acceptor (A) Chalcone (DDFP)

2020 ◽  
Vol 234 (1) ◽  
pp. 145-152
Author(s):  
M. A. N. Razvi ◽  
S. M. Afzal ◽  
Salman A. Khan ◽  
Ahmed H. Bakry
Keyword(s):  
Nonlinear Optical ◽  
Nonlinear Optical Property ◽  
Limiting Behavior ◽  
Ultrasonic Assisted ◽  
Ion Laser ◽  
Ft Ir ◽  
Scan Data ◽  
Argon Ion ◽  
Very High ◽  
C Nmr

Abstract3-(3,4-dimethoxyphenyl)-1-(2,5-dimethylfuran-3-yl)prop-2-en-1-one (DDFP), is prepared by the equimolar ratio of 1-(2,5-dimethylfuran)ethan-1-one and 3,4, dimethoxy benzaldehyde under ultrasonic irradiation. Structure of DDFP was established by the FT-IR, 1H and 13C-NMR spectroscopic methods and elemental analysis. The nonlinear optical properties of this dye using the z-scan technique with a cw argon ion laser at 514.5 nm are studied. Both the closed and open aperture z-scan data is used to estimate the nonlinear refractive index n2 and the nonlinear absorption coefficient β respectively. The measurements are carried out at five concentrations as well as at five laser powers. The values obtained are relatively very high and vary linearly with concentration. The studies on optical limiting behavior of this dye are also reported here.

Resonant Nonlinear Optical Studies on Porphyrin Derivatives

1997 ◽  
Vol 06 (03) ◽  
pp. 361-375 ◽  
Author(s):  
K. Kandasamy ◽  
P. N. Puntambekar ◽  
Bhanu P. Singh ◽  
Shankar J. Shetty ◽  
T. S. Srivastava
Keyword(s):  
Excited State ◽  
Nonlinear Optical ◽  
Excited State Absorption ◽  
Saturable Absorption ◽  
Saturation Intensity ◽  
Porphyrin Derivatives ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Induced Changes ◽  
Argon Ion

The nonlinear optical properties of three porphyrin derivatives (T3,4 BCEMPP, T4 CEMPP and TPP) doped in boric acid glass were probed using the Z-scan technique at different argon-ion laser wavelengths. The nonlinear transmission characteristics of T3,4 BCEMPP and T4 CEMPP exhibit saturable absorption at 457.9 nm and 476.5 nm while these are dominated by excited state absorption at 488.0 nm. However, in the case of TPP, the excited state absorption dominates the nonlinear characteristics except at 457.9 nm. The experimental observations are explained by using the four-level saturable absorber model. Saturation intensity, excited state absorption cross-section, light-induced changes in the absorption and the refractive index along with its sign were determined at these argon-ion laser wavelengths. Furthermore, optical limiting characteristics of these samples were studied. The observed limiting action is consistent with the Z-scan studies.

Ultrasound-assisted aqua-mediated synthesis of multi-substituted tetrahydropyridine-3-carboxylates using N-carboxymethyl-3-pyridinium hydrogensulfate ([N-CH2CO2H-3-pic]+HSO4−) as a new efficient ionic liquid catalyst

2021 ◽  
Vol 3 (6) ◽  
Author(s):  
Kobra Nikoofar ◽  
Fatemeh Shahriyari
Keyword(s):  
Ionic Liquid ◽  
Reaction Times ◽  
Aromatic Aldehydes ◽  
Environmentally Benign ◽  
H Nmr ◽  
Sonic Waves ◽  
Ft Ir ◽  
High Yields ◽  
Work Up ◽  
C Nmr

AbstractA simple, straightforward, and ultrasound-promoted method for the preparation of some highly functionalized tetrahydropyridines reported via pseudo five-component reaction of (hetero)aromatic aldehydes, different anilines, and alkyl acetoacetates in the presence of [N-CH2CO2H-3-pic]+HSO4−, as a novel ionic liquid, in green aqueous medium. The IL was synthesized utilizing simple and easily-handled substrates and characterized by FT-IR, 1H NMR, 13C NMR, GC-MASS, FESEM, EDX, and TGA/DTG techniques. The procedure contains some highlighted aspects which are: (a) performing the MCR in the presence of aqua and sonic waves, as two main important and environmentally benign indexes in green and economic chemistry, (b) high yields of products within short reaction times, (c) convenient work-up procedure, (d) preparing the new IL via simple substrates and procedure.

From [B6O13]8– to [GaB5O13]8– to [Ga{B5O9(OH)}{BO(OH)2}]2–: Synthesis, structure and nonlinear optical property of the new metal borates

CrystEngComm ◽  
2021 ◽  
Author(s):  
Qi-Ming Qiu ◽  
Guo-Yu Yang
Keyword(s):  
Optical Property ◽  
Nonlinear Optical ◽  
Nonlinear Optical Property ◽  
Solvothermal Conditions ◽  
3D Framework

Three new metal borates, namely K0.5[B6O10]·H2O·1.5H3O (1), [GaB5O10]·H2en (2) and NaCs[Ga{B5O9(OH)}{BO(OH)2}] (3) have been synthesized under solvothermal conditions. Compound 1 features an intricate 3D framework composed of [B6O13]8– clusters, resulting...

scholarly journals Tunable Nonlinear Optical Property of MnS Nanoparticles with Different Size and Crystal Form

Nanomaterials ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 34
Author(s):  
Zhihao Zhang ◽  
Pengchao Li ◽  
Yuzong Gu
Keyword(s):  
Optical Property ◽  
Nonlinear Optical ◽  
Nonlinear Optical Property ◽  
Nonlinear Refraction ◽  
Synthesis Method ◽  
Crystal Form ◽  
Optical Nonlinearity ◽  
Photon Absorption ◽  
Third Order ◽  
Crystal Forms

It is significant to study the reason that semiconductor material has adjustable third-order optical nonlinearity through crystal form and dimensions are changed. αMnS nanoparticles with different crystal forms and sizes were successfully prepared by one-step hydrothermal synthesis method and their size-limited third-order nonlinear optical property was tested by Z-scan technique with 30 ps laser pulses at 532 nm wavelength. Nanoparticles of different crystal forms exhibited different NLO (nonlinear optical) responses. γMnS had stronger NLO response than αMnS because of higher fluorescence quantum yield. Two-photon absorption and the nonlinear refraction are enhanced as size of nanoparticlesreduced. The nanoparticles had maximum NLO susceptibility which was 3.09 × 10−12 esu. Susceptibility of αMnS increased about nine times than that of largest nanoparticles. However, it was reduced when size was further decreased. This trend was explained by the effects of light induced dipole moments. And defects in αMnS nanoparticles also had effect on this nonlinear process. MnS nanoparticles had potential application value in optical limiting and optical modulation.

Optical, electrochemical and third-order nonlinear optical studies of triphenylamine substituted zinc phthalocyanine

2016 ◽  
Vol 20 (08n11) ◽  
pp. 1173-1181 ◽  
Author(s):  
Narra Vamsi Krishna ◽  
Puliparambil Thilakan Anusha ◽  
S. Venugopal Rao ◽  
L. Giribabu
Keyword(s):  
Nonlinear Optical ◽  
Emission Spectra ◽  
Optical Emission ◽  
Soret Band ◽  
Laser Pulses ◽  
Zinc Phthalocyanine ◽  
Third Order ◽  
Time Resolved ◽  
Nlo Properties ◽  
Scan Data

Zinc phthalocyanine possessing triphenylamine at its peripheral position has been synthesized and its optical, emission, electrochemical and third-order nonlinear optical (NLO) properties were investigated. Soret band was broadened due to the presence of triphenylamine moiety. Electrochemical properties indicated that both oxidation and reduction processes were ring centered. Emission spectra were recorded in different solvents and the fluorescence yields obtained were in the range of 0.02–0.17 while the time-resolved fluorescence data revealed radiative lifetimes of typically few ns. Third-order NLO properties of this molecule have been examined using the Z-scan technique with picosecond (ps) and femtoseocnd (fs) pulses. Closed and open aperture Z-scan data were recorded with 2 ps/1 50 fs laser pulses at a wavelength of 800 nm and NLO coefficients were extracted from both the data. Our data clearly suggests the potential of this molecule for photonics applications.

Laser Induced Etching for Generation of Si Nanocrystals and Spectroscopic Investigation of Morphology

2005 ◽  
Vol 23 ◽  
pp. 43-46
Author(s):  
H.S. Mavi ◽  
S. Rath ◽  
Arun Shukla
Keyword(s):  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Laser Wavelength ◽  
Interconnected Network ◽  
Substrate Type ◽  
Argon Ion Laser ◽  
Si Nanocrystals ◽  
Ion Laser ◽  
Laser Induced Etching ◽  
Argon Ion

Laser-induced etching of silicon is used to generate silicon nanocrystals. The pore structure depends on the substrate type and etching laser wavelength. Porous silicon (PS) samples prepared by Nd:YAG laser (1.16 eV) etching of n-type substrate showed a fairly uniform and highly interconnected network of nearly circular pores separated by thin columnar boundaries, while no circular pits were produced by argon- ion laser (2.41 eV) etching under similar conditions. The size and size distribution of the nanocrystals are investigated by Raman and photoluminescence spectroscopies and analyzed within the framework of quantum confinement models.

scholarly journals Structural differences between humic fractions from different soil types as determined by FT-IR and 13 C-NMR studies

1989 ◽  
Vol 81-82 ◽  
pp. 187-194 ◽  
Author(s):  
R. Fründ ◽  
H.-D. Lüdemann ◽  
F.J. Gonzalez-Vila ◽  
G. Almendros ◽  
J.C. del Rio ◽  
...  
Keyword(s):  
Soil Types ◽  
Nmr Studies ◽  
Structural Differences ◽  
Ft Ir ◽  
Humic Fractions ◽  
C Nmr

A Current Conduction Mechanism in Laser Recrystallized Silicon Metal-Oxide-Semiconductor Transistors

1983 ◽  
Vol 23 ◽  
Author(s):  
Han-Sheng Lee
Keyword(s):  
Conduction Mechanism ◽  
Single Crystal Silicon ◽  
Silicon Films ◽  
Oxide Semiconductor ◽  
Silicon Substrates ◽  
Mos Transistors ◽  
Crystal Silicon ◽  
Ion Laser ◽  
Argon Ion ◽  
A Current

ABSTRACTN-channel MOS transistors were fabricated on silicon films that had been recrystallized by an argon ion laser at different power levels. These transistors showed electrical characteristics similar, but somewhat inferior to those devices fabricated on single crystal silicon substrates. These differences are attributed to the presence of trapping states at the grain boundaries of the crystallites in the recrystallized silicon. A coulombic scattering model is presented to explain these differences. In the case of films annealed at low laser power, an additional factor of nonuniform trap state distribution is invoked to explain device characteristics. This model provides an adequate explanation for the observed transport properties of transistors fabricated from recrystallized silicon films.

Electron temperatures in a segmented-metal argon-ion laser

1972 ◽  
Vol 5 (10) ◽  
pp. 1807-1814 ◽  
Author(s):  
A Maitland ◽  
J C L Cornish
Keyword(s):  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion
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