scholarly journals Thermal annealing ambiance effect on phosphorus passivation and reactivation mechanisms in silicon-based Schottky diodes hydrogenated by MW-ECR plasma

2021 ◽  
Vol 24 (04) ◽  
pp. 378-389
Author(s):  
D. Belfennache ◽  
◽  
D. Madi ◽  
R. Yekhlef ◽  
L. Toukal ◽  
...  

The main objective of this work is to investigate the effect of thermal annealing in forming gas atmosphere on the mechanism of deactivation and reactivation of phosphorus in silicon-based Schottky diodes. Firstly, the microwave plasma power, initial phosphorus concentration in the samples and hydrogen flux were fixed as 650 W, 1015 cm–3, and 30 sccm, respectively, to investigate the behavior of different working parameters of diodes, specifically the duration and temperature of hydrogenation. Secondly, few samples hydrogenated at 400 °C for 1 h were annealed under the forming gas (10% H2 + 90% N2) within the temperature range from 100 to 700 °C for 1 h. The profiles of active phosphorus concentration were monitored by evaluating the change in concentration of phosphorus after hydrogenation or thermal annealing in a forming gas environment through capacitance-voltage measurements. The obtained results depict the temperature and duration of hydrogenation, which ultimately reveals the complex behavior of phosphorous and hydrogen in silicon. However, the phosphorus passivation rate is homogeneous over all the depths measured at 400 °C. The thermal annealing in a forming gas indicates the increase in passivation rate of phosphorus as a function of annealing temperature, till the passivation rate attains saturation in the sample annealed at 400 °C. At higher temperatures, a decrease in the concentration of phosphorous-hydrogen complexes is observed due to the dissociation of these complexes and reactivation of phosphorus under thermal effect.

1994 ◽  
Vol 339 ◽  
Author(s):  
J. R. Flemish ◽  
K. Xie ◽  
W. Buchwald ◽  
L. Casas ◽  
J. H. Zhao ◽  
...  

ABSTRACTElectron cyclotron resonance (ECR) plasma etching of single crystal 6H-SiC has been investigated using a CF4/O2 gas mixture and compared to conventional reactive ion etching (RIE) in a radio frequency (13.56 MHz) reactor. The use of ECR results in higher etch rates, lower levels of bias and smoother etched surfaces than rf-RIE. ECR etch rates exceeding 100 nm/min have been obtained at a substrate bias of-100 V. Etch rate and surface morphology have been studied as a function of pressure, bias and power. Auger electron spectroscopy shows that ECR etching leaves no residues unlike rf-RIE which leaves residues containing Al, F, O and C. The current-voltage and capacitance-voltage measurements of Schottky diodes show that there is far less damage induced by ECR etching compared to rf-RIE.


Nano Energy ◽  
2021 ◽  
pp. 106861
Author(s):  
Stuart Ferrie ◽  
Anton P. Le Brun ◽  
Gowri Krishnan ◽  
Gunther Anderson ◽  
Nadim Darwish ◽  
...  

1999 ◽  
Vol 572 ◽  
Author(s):  
W. C. Lai ◽  
M. Yokoyama ◽  
C. Y. Chang ◽  
J. D. Guo ◽  
J. S. Tsang ◽  
...  

ABSTRACTCopper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as (ΦB =1.13eV by current-voltage (I-V) method and corrected to be ΦB =1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB =1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.


2016 ◽  
Vol 858 ◽  
pp. 197-200 ◽  
Author(s):  
Ruggero Anzalone ◽  
Marco Salanitri ◽  
Simona Lorenti ◽  
Alberto Campione ◽  
Nicolò Piluso ◽  
...  

Doping incorporation and good uniformity along the wafer it is a mandatory for application in high voltage electronic devices. In this work the effect of the Hydrogen (H) flux position inside the reaction chamber on homo-epitaxial 4H-SiC growth process has been studied. Capacitance-Voltage and FT-IR analyses show as the different position of the gas injector affect the doping and thickness uniformity and profile. On the other hand, By Candela and AFM analyses no morphological or surface influence by Hydrogen flux position has been observed.


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