Dielectric and microstructural properties of barium titanate zirconate thin films on copper substrates

2005 ◽  
Vol 20 (10) ◽  
pp. 2838-2844 ◽  
Author(s):  
J.F. Ihlefeld ◽  
J-P. Maria ◽  
W. Borland
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Barium Titanate ◽  
Room Temperature ◽  
Metallic Copper ◽  
Copper Substrate ◽  
Hydrogen Gas ◽  
Average Grain Size ◽  
Reductive Atmosphere ◽  
Unit Cell Dimensions

Barium titanate zirconate, Ba(Ti1−xZrx)O3 (0 ≤ x ≤ 0.25), thin films were deposited via the chemical solution deposition (CSD) method directly on copper foils. The films were processed in a reductive atmosphere containing nitrogen, water vapor, and hydrogen gas at 900 °C to preserve the metallic copper substrate during crystallization. Increasing the fraction of BaZrO3 revealed several effects, including an increase in unit cell dimensions, a decrease in both the temperature and value of the maximum permittivity, as well as a decrease in the average grain size of the films. The decrease in the relative permittivity was attributed to a grain size effect as opposed to zirconium substitution. In film compositions containing 25 mol% BaZrO3, the permittivity below Tmax became dispersive, and the ferroelectric transitions became increasingly diffuse. These characteristics suggest relaxor-like behavior. The dielectric tunability of Ba(Ti1−xZrx)O3 was studied at room temperature and at Tmax for each composition. There was little variation in the tunability with measurement temperature; however compositions that were ferroelectric at room temperature saw a decrease in hysteresis at Tmax, and all compositions showed an increase in permittivity.

Low Temperature Chemical Synthesis of p-Type SnS Thin Films Suitable for Photovoltaic Structures

2013 ◽  
Vol 209 ◽  
pp. 82-85
Author(s):  
T.H. Patel
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Band Gap ◽  
Room Temperature ◽  
Chemical Compositions ◽  
X Rays ◽  
Average Grain Size ◽  
Sns Thin Films ◽  
P Type ◽  
Deposited Film

SnS thin film has been deposited on glass substrate at room temperature using low cost, environmental friendly chemical bath deposition (CBD) technique. The structural parameters of the deposited film have been investigated through X- ray diffraction measurements. The deposited SnS film found almost crystalline with preferred orientations along (111) planes revealing an orthorhombic phase of herzenbergite SnS structure. The lattice parameters and dislocation density were determined. The average grain size estimated to be ~ 25 nm. The surface morphology of the film examined using scanning electron microscopy (SEM) show uniform granular and any crack or pinhole free deposition of the film. The chemical compositions of the film examined using energy dispersive analysis of x-rays (EDAX) confirmed stoichiometric deposition. The analysis of the optical absorption spectra of the deposited film in the wavelength range of 200-1200 nm indicate that direct allowed transitions are dominant in the film. The direct band gap of the film determined to be ~ 1.92 eV which is higher than those reported earlier for bulk or single crystal SnS, exhibiting quantum size effect at the observed grain size in the film. This value of band gap is promising for possible use of the deposited film as absorption layer in photovoltaic structures like solar cells. The thermoelectric power measurements indicate p-type electrical conductivity of the deposited films. A systematic study on room temperature chemical deposition and characterization of SnS thin films suitable for absorber layer in photovoltaic structures has been reported.

Effect of Annealing Conditions on the Grain Size of Nanocrystalline Copper Thin Films

2008 ◽  
Vol 587-588 ◽  
pp. 483-487 ◽  
Author(s):  
Sonia Simões ◽  
Rosa Calinas ◽  
P.J. Ferreira ◽  
M. Teresa Vieira ◽  
Filomena Viana ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Grain Size ◽  
Grain Growth ◽  
Copper Substrate ◽  
Nanocrystalline Metals ◽  
Nanocrystalline Copper ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Average Grain Size

Nanocrystalline metals demonstrate a broad range of fascinating mechanical properties at the nanoscale, namely a significant increase in hardness and superior yield stress. In this regard, understanding grain growth in nanocrystalline metals is crucial, particularly because nano size grains are characterized by a high curvature, which results in a high driving force for grain growth. In this work, the effect of annealing conditions on grain size of copper nanocrystalline thin films was investigated. The nanocrystalline copper thin films were first deposited by d.c. magnetron sputtering on a copper substrate. The specimens were then annealed in vacuum at 100, 300 and 500°C from 10 minutes to 5 hours. Transmission electron microscopy observations revealed that the as-deposited thin films have a bimodal grain size distribution; an average grain size of 43±2nm and the presence of nanotwins. Abnormal grain growth was observed for some samples annealed. Increasing the annealing time induced significant grain growth and promoted twin formation in the larger grains. Finally, the hardness of these nanocrystalline Cu thin films was determined using atomic force microscope. The relation between mechanical properties, annealing conditions and grain size was analyzed.

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

scholarly journals Sensing mechanism of an optimized room temperature optical hydrogen gas sensor made of zinc oxide thin films

2020 ◽  
Vol 9 (5) ◽  
pp. 10624-10634
Author(s):  
Siti Nor Aliffah Mustaffa ◽  
Nurul Assikin Ariffin ◽  
Ahmed Lateef Khalaf ◽  
Mohd. Hanif Yaacob ◽  
Nizam Tamchek ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Gas Sensor ◽  
Room Temperature ◽  
Hydrogen Gas ◽  
Oxide Thin Films ◽  
Sensing Mechanism

scholarly journals Experimental and Numerical Investigation of the ECAP Processed Copper: Microstructural Evolution, Crystallographic Texture and Hardness Homogeneity

Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 607
Author(s):  
A. I. Alateyah ◽  
Mohamed M. Z. Ahmed ◽  
Yasser Zedan ◽  
H. Abd El-Hafez ◽  
Majed O. Alawad ◽  
...  
Keyword(s):  
Grain Size ◽  
Equal Channel Angular Pressing ◽  
Cross Section ◽  
Room Temperature ◽  
Pure Copper ◽  
High Density ◽  
Ecap Processing ◽  
Heterogeneous Distribution ◽  
Angular Pressing ◽  
Average Grain Size

The current study presents a detailed investigation for the equal channel angular pressing of pure copper through two regimes. The first was equal channel angular pressing (ECAP) processing at room temperature and the second was ECAP processing at 200 °C for up to 4-passes of route Bc. The grain structure and texture was investigated using electron back scattering diffraction (EBSD) across the whole sample cross-section and also the hardness and the tensile properties. The microstructure obtained after 1-pass at room temperature revealed finer equiaxed grains of about 3.89 µm down to submicrons with a high density of twin compared to the starting material. Additionally, a notable increase in the low angle grain boundaries (LAGBs) density was observed. This microstructure was found to be homogenous through the sample cross section. Further straining up to 2-passes showed a significant reduction of the average grain size to 2.97 µm with observable heterogeneous distribution of grains size. On the other hand, increasing the strain up to 4-passes enhanced the homogeneity of grain size distribution. The texture after 4-passes resembled the simple shear texture with about 7 times random. Conducting the ECAP processing at 200 °C resulted in a severely deformed microstructure with the highest fraction of submicron grains and high density of substructures was also observed. ECAP processing through 4-passes at room temperature experienced a significant increase in both hardness and tensile strength up to 180% and 124%, respectively.

scholarly journals On the multiplying factor for the estimation of the average grain size in thin films

2021 ◽  
Vol 196 ◽  
pp. 113748
Author(s):  
Srinivas K. Yadavalli ◽  
Mingyu Hu ◽  
Nitin P. Padture
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Average Grain Size

LiNiO2 Thin Films Fabricated by Diffusion of Li on Ni Tapes

2007 ◽  
Vol 336-338 ◽  
pp. 505-508
Author(s):  
Cheol Jin Kim ◽  
In Sup Ahn ◽  
Kwon Koo Cho ◽  
Sung Gap Lee ◽  
Jun Ki Chung
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Grain Size ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Cold Isostatic Pressing ◽  
Tube Furnace ◽  
Treatment Conditions ◽  
Average Grain Size ◽  
Cold Rolling And Annealing

LiNiO2 thin films for the application of cathode of the rechargeable battery were fabricated by Li ion diffusion on the surface oxidized NiO layer. Bi-axially textured Ni-tapes with 50 ~ 80 μm thickness were fabricated using cold rolling and annealing of Ni-rod prepared by cold isostatic pressing of Ni powder. Surface oxidation of Ni-tapes were conducted using tube furnace or line-focused infrared heater at 700 °C for 150 sec in flowing oxygen atmosphere, resulted in NiO layer with thickness of 400 and 800 μm, respectively. After Li was deposited on the NiO layer by thermal evaporation, LiNiO2 was formed by Li diffusion through the NiO layer during subsequent heat treatment using IR heater with various heat treatment conditions. IR-heating resulted in the smoother surface and finer grain size of NiO and LiNiO2 layer compared to the tube-furnace heating. The average grain size of LiNiO2 layer was 0.5~1 μm, which is much smaller than that of sol-gel processed LiNiO2. The reacted LiNiO2 region showed homogeneous composition throughout the thickness and did not show any noticeable defects frequently found in the solid state reacted LiNiO2, but crack and delamination between the reacted LiNiO2 and Ni occurred as the reaction time increased above 4hrs.

ATOMIC FORCE MICROSCOPY AND XRD ANALYSIS OF SILVER FILMS DEPOSITED BY THERMAL EVAPORATION

2006 ◽  
Vol 20 (02) ◽  
pp. 217-231 ◽  
Author(s):  
MUHAMMAD MAQBOOL ◽  
TAHIRZEB KHAN
Keyword(s):  
Atomic Force Microscopy ◽  
Grain Size ◽  
Surface Characterization ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Xrd Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Average Grain Size ◽  
20 Nm

Thin films of pure silver were deposited on glass substrate by thermal evaporation process at room temperature. Surface characterization of the films was performed using X-ray diffraction (XRD) and atomic force microscopy (AFM). Thickness of the films varied between 20 nm and 72.8 nm. XRD analysis provided a sharp peak at 38.75° from silver. These results indicated that the films deposited on glass substrates at room temperature are crystalline. Three-dimension and top view pictures of the films were obtained by AFM to study the grain size and its dependency on various factors. Average grain size increased with the thickness of the deposited films. A minimum grain size of 8 nm was obtained for 20 nm thick films, reaching 41.9 nm when the film size reaches 60 nm. Grain size was calculated from the information provided by the XRD spectrum and averaging method. We could not find any sequential variation in the grain size with the growth rate.

scholarly journals Effect of Solution Conditions on the Properties of Sol–Gel Derived Potassium Sodium Niobate Thin Films on Platinized Sapphire Substrates

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1600 ◽  
Author(s):  
Alexander Tkach ◽  
André Santos ◽  
Sebastian Zlotnik ◽  
Ricardo Serrazina ◽  
Olena Okhay ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Low Cost ◽  
Sol Gel ◽  
Precursor Solution ◽  
Dissipation Factor ◽  
Solution Concentration ◽  
Potassium Sodium Niobate ◽  
Sapphire Substrates ◽  
Average Grain Size

If piezoelectric micro-devices based on K0.5Na0.5NbO3 (KNN) thin films are to achieve commercialization, it is critical to optimize the films’ performance using low-cost scalable processing conditions. Here, sol–gel derived KNN thin films are deposited using 0.2 and 0.4 M precursor solutions with 5% solely potassium excess and 20% alkali (both potassium and sodium) excess on platinized sapphire substrates with reduced thermal expansion mismatch in relation to KNN. Being then rapid thermal annealed at 750 °C for 5 min, the films revealed an identical thickness of ~340 nm but different properties. An average grain size of ~100 nm and nearly stoichiometric KNN films are obtained when using 5% potassium excess solution, while 20% alkali excess solutions give the grain size of 500–600 nm and (Na + K)/Nb ratio of 1.07–1.08 in the prepared films. Moreover, the 5% potassium excess solution films have a perovskite structure without clear preferential orientation, whereas a (100) texture appears for 20% alkali excess solutions, being particularly strong for the 0.4 M solution concentration. As a result of the grain size and (100) texturing competition, the highest room-temperature dielectric permittivity and lowest dissipation factor measured in the parallel-plate-capacitor geometry were obtained for KNN films using 0.2 M precursor solutions with 20% alkali excess. These films were also shown to possess more quadratic-like and less coercive local piezoelectric loops, compared to those from 5% potassium excess solution. Furthermore, KNN films with large (100)-textured grains prepared from 0.4 M precursor solution with 20% alkali excess were found to possess superior local piezoresponse attributed to multiscale domain microstructures.

Dielectric Properties of Nanograined BaTiO3 Ceramics Fabricated by Aerosol Deposition Method

2011 ◽  
Vol 485 ◽  
pp. 183-186 ◽  
Author(s):  
Tsutomu Furuta ◽  
Saki Hatta ◽  
Yoichi Kigoshi ◽  
Takuya Hoshina ◽  
Hiroaki Takeda ◽  
...  
Keyword(s):  
Grain Size ◽  
Room Temperature ◽  
Annealing Treatment ◽  
Aerosol Deposition ◽  
Dielectric Measurement ◽  
Deposition Method ◽  
Grain Sizes ◽  
Average Grain Size ◽  
Aerosol Deposition Method ◽  
Polarization Electric Field

Freestanding BaTiO3 ceramics films were fabricated using the aerosol deposition (AD) method and the size effect of nanograined BaTiO3 ceramics was demonstrated. Dense BaTiO3 thick film fabricated by the AD method was crystallized and detached from substrate by an annealing treatment at 600 °C, and then the grain size was controlled by a reannealing treatment at various temperatures. As a result, freestanding BaTiO3 thick films with various grain sizes from 24 to 170 nm were successfully obtained. Polarization–electric field (P–E) measurement revealed that BaTiO3 ceramics with grain sizes of more than 58 nm showed ferroelectricity, whereas BaTiO3 ceramics with an average grain size of 24 nm showed paraelectricity at room temperature. Dielectric measurement indicated that the permittivity decreased with decreasing grain size in the range of 170 to 24 nm.

Sign in / Sign up

Export Citation Format

Share Document