Metastable Zincblende MnTe and MnSe: MBE Growth and Characterization

1989 ◽  
Vol 151 ◽  
Author(s):  
R. L. Gunshor ◽  
L. A. Kolodziejski ◽  
M. Kobayashi ◽  
A. V. Nurmikko ◽  
N. Otsuka
Keyword(s):  
Molecular Beam ◽  
Magnetic Measurements ◽  
Magnetic Ordering ◽  
Thin Layers ◽  
Optical Measurements ◽  
Double Barrier ◽  
Mbe Growth ◽  
Hole Confinement ◽  
Reflectance Measurements ◽  
Insight Into

ABSTRACTEpilayers of metastable zincblende MnSe and MnTe have been grown by molecular beam epitaxy. The MnSe structures have been used to study magnetic ordering in thin layers by means of optical and magnetic measurements. Preliminary optical reflectance measurements performed on samples of zincblende MnTe indicate a bandgap of approximately 3.15eV, while double barrier quantum structures demonstrate optical transitions corresponding to 2D electron and hole confinement. Optical measurements further provide insight into the band offsets existing between MnTe and CdTe, as well as between MnTe and ZnTe epilayers.

scholarly journals Sensitive RHEED signature of Ti-excess enabling enhanced cationic composition control during the molecular beam epitaxy of SrTiO3 based solid solutions

CrystEngComm ◽  
2021 ◽  
Author(s):  
Masoumeh Razaghi Pey Ghaleh ◽  
Marc d'Esperonnat ◽  
Claude Botella ◽  
Sébastien Cueff ◽  
Romain Bachelet ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Solid Solutions ◽  
Molecular Beam ◽  
Thin Layers ◽  
Mbe Growth ◽  
Cationic Composition ◽  
Composition Control ◽  
Improved Accuracy

Monitoring the appearance of half-order streaks along the [210] RHEED azimuths instead of along the [100] azimuths during the MBE growth of SrTiO3 thin layers provides an improved accuracy of ±6.7% on the control of the cationic composition.

Growth of Epitaxial IrSi3 Layers on Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
T. L. Lin ◽  
C. W. Nieh
Keyword(s):  
Surface Morphology ◽  
Molecular Beam ◽  
Solid Phase ◽  
Single Mode ◽  
Growth Conditions ◽  
Tem Analysis ◽  
Mbe Growth ◽  
Good Surface ◽  
Transmission Electron

AbstractEpitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.

Optical Properties of (Pb,Eu)Te Thin Films and Superlattices

1986 ◽  
Vol 89 ◽  
Author(s):  
W. C. Goltsos ◽  
A. V. Nurmikko ◽  
D. L. Partin
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spin Exchange ◽  
Optical Measurements ◽  
Optical Gap ◽  
Exchange Processes ◽  
Reflectance Measurements

AbstractPhotoluminescence, transmission, and reflectance measurements have yielded information about the states defining an optical gap in thin films and superlattices based on the (Pb,Eu)Te system, including the limit of high Eu concentration. Magneto-optical measurements show the presence of finite spin exchange processes at low Eu-concentrations.

X-Ray Diffraction Study of Rare Earth Epitaxial Structures Grown by MBE onto (111) GaAs

1989 ◽  
Vol 151 ◽  
Author(s):  
W. R. Bennett ◽  
R. F. C. Farrow ◽  
S. S. P. Parkin ◽  
E. E. Marinero
Keyword(s):  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Rare Earth Metal ◽  
Molecular Beam ◽  
Earth Metal ◽  
Magnetic Ordering ◽  
Metal Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Strain Components

ABSTRACTWe report on the new epitaxial system LaF3/Er/Dy/Er/LaF3/GaAs (111) grown by molecular beam epitaxy. X-ray diffraction studies have been used to determine the epitaxial relationships between the rare earths, the LaF3 and the substrate. Further studies of symmetric and asymmetric reflections yielded the in-plane and perpendicular strain components of the rare earth layers. Such systems may be used to probe the effects of magnetoelastic interactions and dimensionality on magnetic ordering in rare earth metal films and multilayers.

Magnetic ordering in relaxor ferroelectric (1 − x)Pb(Fe2/3W1/3)O3–xPbTiO3 single crystals

2007 ◽  
Vol 22 (8) ◽  
pp. 2116-2124 ◽  
Author(s):  
Li Feng ◽  
Haiyan Guo ◽  
Zuo-Guang Ye
Keyword(s):  
Single Crystals ◽  
Magnetic Measurements ◽  
Ferroelectric Properties ◽  
Magnetic Ordering ◽  
Magnetic Behavior ◽  
Relaxor Ferroelectric ◽  
X Ray Diffraction ◽  
Ferroelectric State ◽  
Temperature Changes ◽  
Temperature Solution

Single crystals of the perovskite solid solution (1 − x)Pb(Fe2/3W1/3)O3–xPbTiO3, with x = 0, 0.07, 0.27, and 0.75, have been synthesized by the high-temperature solution growth using PbO as flux and characterized by x-ray diffraction and dielectric and magnetic measurements. The crystal structure at room temperature changes from a pseudocubic to a tetragonal phase with the PbTiO3 (PT) content increasing to x ⩾ 0.27. As the amount of PT increases, the relaxor ferroelectric behavior of Pb(Fe2/3W1/3)O3 (PFW) is transformed toward a normal ferroelectric state with sharp and nondispersive peaks of dielectric permittivity at TC. Two types of magnetic orderings are observed on the temperature dependence of the magnetization in the crystals with x ⩽ 0.27. This behavior is explained based on the relationships among the magnetic ordering, perovskite structure, composition, and relaxor ferroelectric properties. Furthermore, the macroscopic magnetization of the system was measured under the application of a magnetic field, which demonstrates different magnetic behavior associated with the weakly ferromagnetic, antiferromagnetic, and paramagnetic ordering in the temperature range of 2 to 390 K. Interestingly, the low-temperature ferromagnetism is enhanced by the addition of ferroelectric PT up to x = 0.27.

scholarly journals Beating in the RHEED Intensity Oscillations during Surfactant Mediated GaAs Molecular Beam Epitaxy: Process Physics and Modeling

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 405-408
Author(s):  
Vamsee K. Pamula ◽  
R. Venkat
Keyword(s):  
Molecular Beam ◽  
Flux Ratio ◽  
High Energy ◽  
Equation Model ◽  
High Energy Electron ◽  
Fixed Temperature ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Monolayer Coverage ◽  
Period Of Oscillation

In a recent work, beating in the reflection high energy electron diffraction (RHEED) intensity oscillations were observed during molecular beam epitaxial (MBE) growth of GaAs with Sn as a surfactant. The strength of beating is found to be dependent on the Sn submonolayer coverage with strong beating observed for 0.4 monolayer coverage. For a fixed temperature and flux ratio (Ga to As), the period of oscillation decreases with increasing Sn coverage. In this work, we have developed a rate equation model of growth to investigate this phenomenon. In our model, the GaAs covered by the Sn is assumed to grow at a faster rate compared to the GaAs not covered by Sn. Assuming that the electron beams reflected from the Sn covered surface and the rest of the surface are incoherent, the results of the dependence of the RHEED oscillations on Sn submonolayer coverages for various Sn coverages were obtained and compared with experimental data and the agreement is good.

MBE Growth and Characterization of SxGe1−x Multilayer Structures on Si (100) for Use as a Substrate for GaAs Heteroepitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
J. B. Posthill ◽  
D. P. Malta ◽  
R. Venkatasubramanian ◽  
P. R. Sharps ◽  
M. L. Timmons ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Lattice Mismatch ◽  
Antiphase Domain ◽  
Multilayer Structures ◽  
Si Substrate ◽  
Mbe Growth ◽  
Etch Pit ◽  
Layer Structures ◽  
Domain Boundaries

ABSTRACTInvestigation has continued into the use of SixGe1−x multilayer structures (MLS) as a buffer layer between a Si substrate and a GaAs epitaxial layer in order to accommodate the 4.1% lattice mismatch. SixGe1−x 4-layer and 5-layer structures terminating in pure Ge have been grown using molecular beam epitaxy. Subsequent GaAs heteroepitaxy has allowed evaluation of these various GaAs/SixGe1−xMLS/Si (100) structures. Antiphase domain boundaries have been eliminated using vicinal Si (100) substrates tilted 6° off-axis toward [011], and the etch pit density in GaAs grown on a 5-layer SixGe1−x MLS on vicinal Si (lOO) was measured to be 106 cm−2.

scholarly journals Chemical Design and Magnetic Ordering in Thin Layers of 2D Metal–Organic Frameworks (MOFs)

2021 ◽  
Author(s):  
Javier López-Cabrelles ◽  
Samuel Mañas-Valero ◽  
Iñigo J. Vitórica-Yrezábal ◽  
Makars Šiškins ◽  
Martin Lee ◽  
...  
Keyword(s):  
Metal Organic Frameworks ◽  
Magnetic Ordering ◽  
Thin Layers ◽  
Chemical Design ◽  
Metal Organic

High Mobility GaInAs Thin Layers Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 24 (Part 2, No. 2) ◽  
pp. L119-L121 ◽  
Author(s):  
Takashi Mizutani ◽  
Kazuyuki Hirose
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Mobility ◽  
Thin Layers

Insight into the halogen-bond nature of noble gas-chlorine systems by molecular beam scattering experiments, ab initio calculations and charge displacement analysis

2019 ◽  
Vol 21 (14) ◽  
pp. 7330-7340 ◽  
Author(s):  
Francesca Nunzi ◽  
Diego Cesario ◽  
Leonardo Belpassi ◽  
Francesco Tarantelli ◽  
Luiz F. Roncaratti ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Ab Initio Calculations ◽  
Ab Initio ◽  
Molecular Beam ◽  
Halogen Bond ◽  
Noble Gas ◽  
Molecular Beam Scattering ◽  
Beam Scattering ◽  
Charge Displacement ◽  
Insight Into

A weak halogen bond, together with charge transfer from a noble gas to Cl2, characterizes the intermolecular interaction between a noble gas atom and Cl2 in a collinear configuration.

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