Thin Film Transistors Made From Hydrogenated Microcrystalline Silicon

1993 ◽  
Vol 321 ◽  
Author(s):  
K. C. Wang ◽  
B. Y. Chen ◽  
K. C. Hsu ◽  
T. R. Yew ◽  
H. L. Hwang
Keyword(s):  
Thin Film ◽  
Nuclear Magnetic Resonance ◽  
Hydrogen Atom ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Resonance Raman Spectroscopy ◽  
Chemical Vapor ◽  
Treatment Method ◽  
Microcrystalline Silicon ◽  
Microcrystalline Materials

ABSTRACTMicrocrystalline silicon films were deposited by diluted-hydrogen method and hydrogen-atom-treatment method at 250°C in a plasma enhanced chemical vapor deposition system and they were characterized by nuclear magnetic resonance, Raman spectroscopy, and optical bandgap Measurements. One-Mask a-Si:H thin film transistors (TFT's) were fabricated with those microcrystalline materials as the channel layer. The highest electron mobilities of the TFT's fabricated by diluted-hydrogen method and hydrogen-atom-treatment method were 1.23 and 1.04 cm2/V•s, respectively without any thermal treatment steps.

scholarly journals A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD

10.30544/128 ◽  
2015 ◽  
Vol 21 (1) ◽  
pp. 7-14
Author(s):  
Meysam Zarchi ◽  
Shahrokh Ahangarani
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Intrinsic Stress ◽  
Hot Wire ◽  
Microcrystalline Silicon

The effect of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H) thin film transistors (TFTs) has been studied. It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic stress in the a-Si:H layer. Amorphous and microcrystalline silicon films were deposited by radiofrequency plasma enhanced chemical vapor deposition (RF-PECVD) and hot-wire chemical vapor deposition (HW-CVD) at 100 ºC and 25 ºC. Structural properties of these films were measured by Raman Spectroscopy. Electronic properties were measured by dark conductivity, σd, and photoconductivity, σph. For amorphous silicon films deposited by RF-PECVD on PET, photosensitivity's of >105 were obtained at both 100 º C and 25 ºC. For amorphous silicon films deposited by HW-CVD, a photosensitivity of > 105 was obtained at 100 ºC. Microcrystalline silicon films deposited by HW-CVD at 95% hydrogen dilution show σph~ 10-4 Ω-1cm-1, while maintaining a photosensitivity of ~102 at both 100 ºC and 25 ºC. Microcrystalline silicon films with a large crystalline fraction (> 50%) can be deposited by HW-CVD all the way down to room temperature.

Properties of Amorphous Silicon Thin Film Transistors with Phosphorous-Doped Hydrogenated Microcrystalline Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
J. H. Choi ◽  
C. W. Kim ◽  
H. G. Yang ◽  
J. H. Souk
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Chemical Vapor ◽  
Field Effect Mobility ◽  
Rf Power ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
Threshold Voltages

AbstractPhosphorous (P) doped hydrogenated microcrystallme silicon (n+μ c-Si:H) films have been prepared by using the hydrogen-diluted plasma enhanced chemical vapor deposition (PECVD) method. The crystallinity of films deposited over the range of SiH4/H2 flow ratios and RF-power is studied by Raman spectroscopy. For a 900 Å thick film deposited at 250°C, a conductivity of 71Ω−1cm−1 and an average crystallinity of 49% is obtained. n+ μ c-Si:H films as well as n+ a-Si:H films are used for both etch stopper and back channel etch type TFTs and the I4-V8 characteristics are compared. For the etch stopper type TFT, the field effect mobility of 0.85 cm2/V.sec, threshold voltages of 2 – 3 V and Ion/Ioff ratio of ∼107 are obtained.

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

Thin-film transistors deposited by hot-wire chemical vapor deposition

2003 ◽  
Vol 430 (1-2) ◽  
pp. 220-225 ◽  
Author(s):  
B. Stannowski ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Hot Wire

scholarly journals Dual-gate low-voltage transparent electric-double-layer thin-film transistors with a top gate for threshold voltage modulation

RSC Advances ◽  
2020 ◽  
Vol 10 (14) ◽  
pp. 8093-8096
Author(s):  
Wei Dou ◽  
Yuanyuan Tan
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Double Layer ◽  
Vapor Deposition ◽  
Electric Double Layer ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Chemical Vapor ◽  
Dual Gate ◽  
Layer Thin Film

Dual gate (DG) low-voltage transparent electric-double-layer (EDL) thin-film transistors (TFTs) with microporous-SiO2 for both top and bottom dielectrics have been fabricated, both dielectrics were deposited by plasma-enhanced chemical vapor deposition (PECVD).

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