High Quality NiFe/Ag Superlattices Made by Pulsed Laser Deposition (PLD)

1995 ◽  
Vol 382 ◽  
Author(s):  
Randolph E. Treece ◽  
Paul Dorsey ◽  
James S. Horwitz ◽  
Syed Qadri ◽  
Douglas B. Chrisey
Keyword(s):  
Magnetic Field ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Fused Silica ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
High Quality ◽  
Target Holder ◽  
Field Dependent ◽  
First Time

ABSTRACTHigh-quality thin-film superlattices of permalloy (NiFe) and silver (Ag) have been grown by pulsed laser deposition (PLD) for the first time. The alternating metallic layers weregrown from individual NiFe and Ag targets utilizing an automated multi-target holder coupled to a conventional PLD system. The targets were ablated at a base pressure of 4×10−7 Torr and the material deposited on room-temperature (100) silicon and on fused silica substrates. The films were characterized by X-ray diffraction (XRD), magnetic field-dependent resistivity, and ferromagnetic resonance (FMR). XRD was used to confirm uniform bilayer thicknesses. The magnetic field-dependent resistance measurements indicated the presence of magnetoresistance in the deposited films. An as-deposited film with a bilayer thickness of 75 Å demonstrated a roomtemperature magnetoresistive effect of 0.15 %. FMR has been used to determine the relationship between NiFe magnetism and the observed magnetoresistance.

Preparation of Doped Lanthanum Gallate Electrolyte for SOFC by Pulsed Laser Deposition

2002 ◽  
Vol 730 ◽  
Author(s):  
Seiji Kanazawa ◽  
Takeshi Ito ◽  
Kenji Yamada ◽  
Toshikazu Ohkubo ◽  
Yukiharu Nomoto ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Incident Angle ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Lanthanum Gallate ◽  
X Ray Diffraction ◽  
Target Holder ◽  
Gas Leakage ◽  
Krf Excimer Laser ◽  
Deposited Films

AbstractIn this study, doped lanthanum gallate (LSGM with the composition La0.9Sr0.1Ga0.8Mg0.2O3-δ, LSGMC with the composition La0.8Sr0.2Ga0.8Mg0.15Co0.05O3-δ) films for an electrolyte of the solid oxide fuel cell (SOFC) were prepared by pulsed laser deposition (PLD) technique. In the vacuum chamber, LSGM or LSGMC targets were set on the rotating target holder. A KrF excimer laser was introduced into the chamber at an incident angle of about 45 degree. The doped LaGaO3 film was deposited onto NiO substrates without heating in argon ambient gas. The NiO substrate can be used directly as an electrode in the fabrication of the SOFC. The deposited LSGM films were characterized by X-ray diffraction (XRD), secondary ion mass spectroscopy (SIMS) and scanning electron microscopy (SEM). As-deposited films were amorphous. After post annealing at 1273K for 6-10 hours, crystalline LaGaO3 was obtained. Films with thickness greater than several 10 μm showed an uniform and dense morphology. No gas leakage was found using thick films, which is an important characteristic for an electrolyte in fuel cells. The composition of the deposited films was slightly different to that of the target.

Thin Films of Semiconducting SnSi Alloys Grown by Pulsed Laser Deposition

1994 ◽  
Vol 358 ◽  
Author(s):  
Randolph E. Treece ◽  
J. S. Horwitz ◽  
D. B. Chrisey ◽  
J. Tang ◽  
R. S. Williams
Keyword(s):  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Rays ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Target Holder ◽  
X Ray ◽  
Potential Applications

ABSTRACTSemiconducting SnxSi1−x (0≤x≤0.6) thin-film alloys have been grown by pulsed laser deposition (PLD). These new materials are amorphous to X-rays and display small positive optical band gaps, suggesting potential applications in solar cells. The tin silicide films were grown by depositing very thin (1–30 Å) alternating atomic layers from individual Sn and Si targets utilizing an automated multi-target holder coupled to a conventional PLD system. The value of x was selected by controlling the thickness of the atomic layers. The films were characterized by X-ray diffraction, optical absorption, Rutherford backscattering spectroscopy, temperature-dependent resistivity, and X-ray photoelectron spectroscopy. Tin segregation is prevented by keeping the Sn layer thickness below a critical value. Compositions beyond x > 0.6 led to semimetallic SnxSi1−x films with tin crystallites.

Growth and Characterization of Hard Nitrides Films Prepared by Pulsed Laser Deposition

1995 ◽  
Vol 403 ◽  
Author(s):  
R. B. Inturi ◽  
Ashok Kumar ◽  
U. Ekanayake ◽  
N. Shu ◽  
J. A. Barnard
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Elevated Temperatures ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Temperature Strength ◽  
X Ray Diffraction ◽  
High Quality ◽  
Thin Film Coatings ◽  
Deposition Parameters

AbstractTransition metal of nitrides have many desirable properties for application at elevated temperatures because of extremely high melting point, hardness, high temperature strength, good thermal shock resistance, and high thermal conductivity. We have investigated the thin film coatings of nitrides (titanium nitride, and composite carbon nitride) on various commercial useful substrates by the pulsed laser deposition (PLD) method. The PLD method is unique process for depositing high quality thin films with novel microstructure and properties. The laser parameters: energy density, pulse rate, target/substrate distance and substrate temperature have been optimized to improve the quality of thin films. The mechanical properties of the films have been evaluated at different processed conditions by nanoindentation technique. The films were characterized by X-ray diffraction, scanning electron microscope and FTIR techniques. Optimization of laser deposition parameters to obtain high quality thin films will be discussed in detail.

Fabrication Of Nd:YVO4 Thin Film Waveguide Grown on Si/SiO2 by Pulsed Laser Deposition

2008 ◽  
Vol 373-374 ◽  
pp. 142-145
Author(s):  
Hong Xia Li ◽  
Ren Guo Song ◽  
Xin Wu ◽  
Ji Yang Wang
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Force Microscopy ◽  
Preparation Conditions ◽  
Atomic Force

High quality Nd:YVO4 thin films were fabricated successfully by using a pulsed laser deposition technique. The properties of the samples were characterized by using X-ray diffraction, atomic force microscopy, and prism-coupling measurements. According to above discussion, we concluded the optimal preparation conditions for Nd:YVO4 films prepared on Si/SiO2 substrates.

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

Columnar Growth of BiFeO3Films Prepared by Magnetic-field-assisted Pulsed Laser Deposition

2014 ◽  
Vol 466 (1) ◽  
pp. 63-73 ◽  
Author(s):  
T. Kanashima ◽  
J. M. Park ◽  
D. Ricinschi ◽  
M. Okuyama
Keyword(s):  
Magnetic Field ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Columnar Growth

Pulsed laser deposition of films on fused silica in waveguide form

1998 ◽  
Vol 31 (22) ◽  
pp. 3185-3187 ◽  
Author(s):  
J Yin ◽  
Z C Wu ◽  
Z L Wang ◽  
Y Y Zhu ◽  
Z G Liu
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Fused Silica ◽  
Laser Deposition

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

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