scholarly journals Electrical Characterization of MOVPE-Grown P-Type GaN:Mg Against Annealing Temperature

1999 ◽  
Vol 4 (S1) ◽  
pp. 665-670 ◽  
Author(s):  
Shizuo Fujita ◽  
Mitsuru Funato ◽  
Doo-Cheol Park ◽  
Yoshifumi Ikenaga ◽  
Shigeo Fujita
Keyword(s):  
Annealing Temperature ◽  
Hole Concentration ◽  
Electrical Characterization ◽  
Sapphire Substrates ◽  
Electrical Degradation ◽  
Scattering Centers ◽  
Hall Effect Measurements ◽  
P Type ◽  
Mg Doped

Hall effect measurements have been applied for the electrical characterization of p-type Mg-doped GaN grown by metalorganic vapor-phase epitaxy on sapphire substrates in terms of annealing temperature for dehydrogenation (N2 annealing) and hydrogenation (H2 annealing) of the acceptors. With the N2 annealing temperature from 600 to 900 °C for dehydrogenation, both hole concentration and mobility increases, showing more activation of acceptors and less incorporation of unfavorable scattering centers probably originating from Mg-H bondings. The N2 annealing at higher than the growth temperature results in reduced hole concentration, but the mobility gets higher. Some defects compensating acceptors may be induced at high temperature annealing, but they seem to be no scattering centers and be inactivated by successive hydrogenation and re-dehydrogenation at the optimum dehydrogenation temperature 900 °C. The electrical degradation of GaN due to thermal damage is not very destructive and can be well recovered by annealing treatments.

Electrical Characterization of MOVPE-GROWN P-Type GaN:Mg Against Annealing Temperature

1998 ◽  
Vol 537 ◽  
Author(s):  
Shizuo Fujita ◽  
Mitsuru Funato ◽  
Doo-Cheol Park ◽  
Yoshifumi Ikenaga ◽  
Shigeo Fujita
Keyword(s):  
Annealing Temperature ◽  
Hole Concentration ◽  
Electrical Characterization ◽  
Sapphire Substrates ◽  
Electrical Degradation ◽  
Scattering Centers ◽  
Hall Effect Measurements ◽  
P Type ◽  
Mg Doped

AbstractHall effect measurements have been applied for the electrical characterization of p-type Mg-doped GaN grown by metalorganic vapor-phase epitaxy on sapphire substrates in terms of annealing temperature for dehydrogenation (N2 annealing) and hydrogenation (H2 annealing) of the acceptors. With the N2 annealing temperature from 600 to 900°C for dehydrogenation, both hole concentration and mobility increases, showing more activation of acceptors and less incorporation of unfavorable scattering centers probably originating from Mg-H bondings. The N2 annealing at higher than the growth temperature results in reduced hole concentration, but the mobility gets higher. Some defects compensating acceptors may be induced at high temperature annealing, but they seem to be no scattering centers and be inactivated by successive hydrogenation and re-dehydrogenation at the optimum dehydrogenation temperature 900°C. The electrical degradation of GaN due to thermal damage is not very destructive and can be well recovered by annealing treatments.

MBE GROWTH AND CHARACTERIZATION OF Mg-DOPED III-NITRIDES ON SAPPHIRE

2009 ◽  
Vol 19 (01) ◽  
pp. 113-119
Author(s):  
X. CHEN ◽  
K. D. MATTHEWS ◽  
D. HAO ◽  
W. J. SCHAFF ◽  
L. F. EASTMAN ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Strong Surface ◽  
Photo Response ◽  
Molecular Beam Epitaxial Growth ◽  
P Type ◽  
Iv Curves ◽  
Mg Doped

Plasma-assisted molecular beam epitaxial growth of Mg -doped GaN and InGaN on a sapphire substrate is investigated in this study. Electrical characteristics of p -type GaN strongly depend on the flux of Mg acceptors and the growth temperature. Only the intermediate range of Mg fluxes (beam equivalent pressures near 1×10-9T) produce p -type GaN with good electrical properties, and a maximum hole concentration of 3.5 × 1018 cm-3 is obtained with a Hall mobility of 2.1 cm2/V·s. Due to the strong surface accumulation of electrons, Hall measurements do not indicate p -type polarity for In fraction beyond 11%. In contrast, hot probe measurements show that p -polarity can be measured for the entire range of Mg -doped In mole fractions. Electroluminescence also indicates p -polarity for Ga -rich mole fractions. In x Ga1- x N p - n homojunctions are fabricated and tested. All GaN devices show low series resistance (0.03 ohm-cm2) and insignificant parasitic leakage. IV curves of all three InGaN homojunctions show rectifying characteristics under dark conditions and photo-response under outdoor sunlight, indicating the existence of holes in InGaN with up to 40% In content.

scholarly journals Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

Coatings ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 699 ◽  
Author(s):  
Thi Tran Anh Tuan ◽  
Dong-Hau Kuo ◽  
Phuong Thao Cao ◽  
Van Sau Nguyen ◽  
Quoc-Phong Pham ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Forward Bias ◽  
Electrical Characterization ◽  
Leakage Currents ◽  
Te Mode ◽  
Current Densities ◽  
P Type ◽  
Gan Film ◽  
Mg Doped

The modeling of p–InxGa1−xN/n–Si hetero junction diodes without using the buffer layer were investigated with the “top-top” electrode. The p–Mg-GaN and p–Mg-In0.05Ga0.95N were deposited directly on the n–Si (100) wafer by the RF reactive sputtering at 400 °C with single cermet targets. Al and Pt with the square size of 1 mm2 were used for electrodes of p–InxGa1−xN/n–Si diodes. Both devices had been designed to prove the p-type performance of 10% Mg-doped in GaN and InGaN films. By Hall measurement at the room temperature (RT), the holes concentration and mobility were determined to be Np = 3.45 × 1016 cm−3 and µ = 145 cm2/V·s for p–GaN film, Np = 2.53 × 1017 cm−3, and µ = 45 cm2/V·s for p–InGaN film. By the I–V measurement at RT, the leakage currents at −5 V and turn-on voltages were found to be 9.31 × 10−7 A and 2.4 V for p–GaN/n–Si and 3.38 × 10−6 A and 1.5 V for p–InGaN/n–Si diode. The current densities at the forward bias of 20 V were 0.421 and 0.814 A·cm−2 for p–GaN/n–Si and p–InGaN/n–Si devices. The electrical properties were measured at the temperature range of 25 to 150 °C. By calculating based on the TE mode, Cheungs’ and Norde methods, and other parameters of diodes were also determined and compared.

Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 455-458 ◽  
Author(s):  
Giovanni Alfieri ◽  
Tsunenobu Kimoto ◽  
Gerhard Pensl
Keyword(s):  
High Purity ◽  
Deep Level ◽  
Electrical Characterization ◽  
Current Mode ◽  
Deep Levels ◽  
Light Illumination ◽  
Hall Effect Measurements ◽  
Transient Spectroscopy ◽  
P Type

We report on the electrical characterization of high-purity semi-insulating 4H-SiC after annealing at temperatures between room temperature and 1700 oC by current-mode deep level transient spectroscopy (I-DLTS). I-V and Hall-effect measurements revealed that the investigated substrates possess p-type conductivity. Four deep levels were detected by I-DLTS with activation energies in the 0.15-1.29 eV range. We studied their thermal stability as well as their stability with respect to light illumination.

P-type Conduction in Bulk ZnSe by Nitrogen Ion-Implantation

1991 ◽  
Vol 228 ◽  
Author(s):  
M. K. Jin ◽  
T. Yasuda ◽  
K. Shahzad ◽  
J. L. Merz
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Hole Concentration ◽  
Implantation Damage ◽  
Hall Effect Measurements ◽  
Nitrogen Ion ◽  
P Type ◽  
Optical Behavior ◽  
Type Conduction

ABSTRACTP-type conduction in bulk ZnSe has been achieved using 1×1016 cm−2 nitrogen (N) ionimplantation followed by a high temperature rapid thermal annealing. Room temperature Hall effect measurements of the sample show that the hole concentration is ∼1×1017 cm−3, and the mobility is ∼30 cm2/V-s. Photoluminescence (PL) measurements were performed to study the optical behavior of the samples, and the results show that the ion implantation damage can be partially repaired by thermal annealing at 900°C or higher. Thermal degradation and recovery of the ion-implantation damage were studied as a function of the annealing temperature.

P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE

2004 ◽  
Vol 831 ◽  
Author(s):  
A. Usikov ◽  
O. Kovalenkov ◽  
V. Ivantsov ◽  
V. Sukhoveev ◽  
V. Dmitriev ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Hole Mobility ◽  
Hydride Vapor Phase Epitaxy ◽  
Electrically Conducting ◽  
Sapphire Substrates ◽  
High Hole Concentration ◽  
P Type ◽  
Initial Results ◽  
Mg Doped ◽  
Effect Technique

ABSTRACTIn this paper we report p-GaN growth by hydride vapor phase epitaxy (HVPE) on sapphire substrates. Mg or Zn impurities were used for doping. Layer thickness ranged from 2 to 5 microns. For both impurities, as-grown GaN layers had p-type conductivity. Concentration NA-ND was varied from 1016 to 1018 cm−3. An annealing procedure at 750°C in argon ambient typically increased the concentration NA-ND in 1.5–3.5 times. For Mg doped GaN layers, room temperature hole mobility of 80 cm2V−1s−1 was measured by conventional Van Der Pau Hall effect technique for material having hole concentration of about 1x1018 cm−3. Initial results on highly electrically conducting p-type AlGaN/GaN heterostructures doped with Zn are also reported.

Elaboration and Characterization of Mg-Doped ZnO Thin Films by Thermal Evaporation: Annealing Temperature Effect

2021 ◽  
Author(s):  
Fouaz Lekoui ◽  
Salim Hassani ◽  
Mohammed Ouchabane ◽  
Hocine Akkari ◽  
Driss Dergham ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Effect ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Mg Doped

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

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