Synthesize of GaN/quartz Nanostructure Using Pulsed Laser Ablation in Liquid for Optoelectronic Devices

This study involves synthesizing gallium nitride (GaN) nanoparticles (NPs) under six different ablation energies using the pulsed laser ablation method. The nanoparticle was deposited using drop cast method on a quartz substrate. XRD pattern shows two peaks of h-GaN nanoparticles at 2θ = 34.64 and 37.98, reflected from (002) and (100) planes. The morphological properties indicate the hexagonal crystal nature of GaN that shows in the XRD pattern. Photoluminescence (PL) spectra show the highest laser power, 2000 mj has a minor emission peaked at 3.34 eV. The maximum emission peak 3.83 eV at 1400 mJ. The study depends on the pulsed laser to generate nanoparticles with different characteristics.