scholarly journals Monolithic Si-Based AlGaN/GaN MIS-HEMTs Comparator and Its High Temperature Characteristics

2021 ◽  
Vol 11 (24) ◽  
pp. 12057
Author(s):  
Fan Li ◽  
Ang Li ◽  
Yuhao Zhu ◽  
Chengmurong Ding ◽  
Yubo Wang ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Wide Band ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Static Characteristics ◽  
Wide Band Gap ◽  
Mixed Signal Circuits ◽  
Promising Application ◽  
Recessed Gate

Monolithic GaN High Electron Mobility Transistor (HEMT)-integrated circuits are a promising application of wide band-gap materials. To date, most GaN-based devices behave as NMOS-like transistors. As only NMOS GaN HEMT is currently commercially available, its control circuit requires special design if monolithic integration is desired. This article analyzes the schematics of a GaN-based comparator, and three comparator structures are compared through ADS simulation. The optimal structure with the bootstrapped technique is fabricated based on AlGaN/GaN Metal–Insulator–Semiconductor (MIS) HEMT with the recessed gate method. The comparator has excellent static characteristics when the reference voltage increases from 3 V to 8 V. Dynamic waveforms from 10 kHz to 1 MHz are also obtained. High-temperature tests from 25 °C to 250 °C are applied upon both DC and AC characteristics. The mechanisms of instability issues are explained under dynamic working condition. The results prove that the comparator can be used in the state-of-art mixed-signal circuits, demonstrating the potential for the monolithic all-GaN integrated circuits.

High Temperature Silicon Carbide CMOS Integrated Circuits

2011 ◽  
Vol 679-680 ◽  
pp. 726-729 ◽  
Author(s):  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
Dave A. Smith ◽  
Robin. F. Thompson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Band Gap ◽  
High Temperatures ◽  
Wide Band ◽  
Cmos Technology ◽  
Cmos Integrated Circuits ◽  
Wide Band Gap ◽  
Circuit Performance

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

A High Temperature Passive GaN-HEMT Mixer for Downhole Communications

2016 ◽  
Vol 2016 (HiTEC) ◽  
pp. 000272-000277 ◽  
Author(s):  
Jebreel M. Salem ◽  
Dong Sam Ha
Keyword(s):  
High Temperature ◽  
Oil And Gas ◽  
Wide Band ◽  
High Electron Mobility Transistor ◽  
Oil And Gas Industry ◽  
Heat Extraction ◽  
High Electron ◽  
Reliable Operation ◽  
Gas Industry ◽  
Gap Technology

Abstract Declining reserves of easily accessible natural resources have motivated the oil and gas industry to drill deeper. Temperatures in these hostile wells can exceed 210 °C. Cooling and conventional heat extraction techniques are impractical in such a harsh environment. Reliable electronic designs that can sustain high temperature become necessary. This paper presents a high temperature passive RF mixer that is suited for downhole communications. The proposed mixer is designed to upconvert or downconvert the incoming signal with a low conversion loss (CL) and high linearity and reliable operation at temperature up to 250 °C. Gallium Nitride (GaN) is a wide band gap technology that can provide a reliable operation at the elevated ambient temperature, and the proposed mixer adopts a commercial GaN high electron mobility transistor (HEMT) technology. Measurement results indicate that the proposed mixer achieves CL of 6.5 dB at LO power of 2.5 dBm for the downconversion from 230–253 MHz to 97.5 MHz at 250 °C and input P1dB compression point lies at 5 dBm. The power dissipation of the mixer is virtually zero.

InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance

2018 ◽  
Vol 11 (9) ◽  
pp. 094101 ◽  
Author(s):  
Yachao Zhang ◽  
Tao Zhang ◽  
Hong Zhou ◽  
Yao Li ◽  
Shengrui Xu ◽  
...  
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Temperature Performance

A Resistive GaN-HEMT Mixer for a Cable Modem Operable up to 250°C for Downhole Communications

2017 ◽  
Vol 14 (1) ◽  
pp. 17-25 ◽  
Author(s):  
Jebreel M. Salem ◽  
Dong Sam Ha
Keyword(s):  
High Temperature ◽  
Oil And Gas ◽  
High Electron Mobility Transistor ◽  
Oil And Gas Industry ◽  
Intermediate Frequency ◽  
Local Oscillator ◽  
Heat Extraction ◽  
High Electron ◽  
Reliable Operation ◽  
Ambient Temperatures

It is necessary for the oil and gas industry to drill deeper due to decrease of easily accessible natural reserves. Temperatures of deep wells can exceed 210°C, and conventional cooling and heat extraction techniques are impractical in such a harsh environment. Reliable electronic designs that can sustain high temperature become necessary. This article presents a high-temperature passive radio frequency (RF) mixer for downhole communications. The proposed mixer is designed to upconvert or downconvert the incoming signal with low conversion loss (CL), high linearity, and reliable operation at the ambient temperature up to 250°C. GaN is a wide-bandgap technology that can provide a reliable operation at high ambient temperatures, and the proposed mixer adopts a commercial GaN high-electron-mobility transistor. Measurement results indicate that the proposed mixer achieves a CL of 7.1 dB at local oscillator (LO) power of 2.5 dBm for the downconversion from 230–253 to 97.5 MHz at 250°C and the input P1dB compression point lies at 5 dBm. The designed mixer also achieves 24.5 dB RF-to-intermediate frequency (IF) isolation and 28 dB LO-to-IF isolation at 250°C. The power dissipation of the mixer is virtually zero.

Test Results of Sintered Nanosilver Paste Die Attach for High-Temperature Applications

2016 ◽  
Vol 13 (1) ◽  
pp. 6-16 ◽  
Author(s):  
Paul Croteau ◽  
Sayan Seal ◽  
Ryan Witherell ◽  
Michael Glover ◽  
Shashank Krishnamurthy ◽  
...  
Keyword(s):  
High Temperature ◽  
Cooling System ◽  
Wide Band ◽  
Power Converter ◽  
Test Results ◽  
Wide Band Gap ◽  
Strain Behavior ◽  
Die Attach ◽  
Nanosilver Paste ◽  
Sintered Silver

The emergence of wide band gap devices has pushed the boundaries of power converter operations and high power density applications. It is desirable to operate a power inverter at high switching frequencies to reduce passive filter weight and at high temperature to reduce the cooling system requirement. Therefore, materials and components that are reliable at temperatures ranging from −55°C to 200°C, or higher, are needed. Sintered silver is receiving significant attention in the power electronic industry. The porous nature of sintered nanosilver paste with a reduced elastic modulus has the potential to provide strain relief between the die component and substrate while maintaining its relatively high melting point after sintering. The test results presented herein include tensile testing to rupture of sintered silver film to characterize stress-strain behavior, as well as die shear and thermal cyclic tests of sintered silver-bonded silicon die specimens to copper substrates to determine shear strength and reliability.

Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO2/SiN

2020 ◽  
Vol 20 (8) ◽  
pp. 4678-4683
Author(s):  
Jun Hyeok Jung ◽  
Min Su Cho ◽  
Won Douk Jang ◽  
Sang Ho Lee ◽  
Jaewon Jang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Gate Insulator ◽  
High Electron ◽  
Insulator Layer ◽  
Metal Insulator ◽  
High Electron Mobility ◽  
Metal Insulator Semiconductor ◽  
Dual Gate ◽  
Recessed Gate

In this work, we present a normally-off recessed-gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) using a TiO2/SiN dual gate-insulator. We analyzed the electrical characteristics of the proposed device and found that the dual gate-insulator device achieves higher on-state currents than the device using a SiN gate-insulator because the high-k insulator layer of the dual gate-insulator improves the gate-controllability. The device using a TiO2/SiN gate-insulator shows better gate leakage current characteristics than the device with only TiO2 gate-insulator because of the high quality SiN gate-insulator. Therefore, the device using a dual gate-insulator can overcome disadvantages of a device using only TiO2 gate-insulator. To better predict the power consumption and the switching speed, we simulated the specific on-resistance (Ron, sp) according to the gate-to-drain distance (LGD) using the two-dimensional ATLAS simulator. The proposed device exhibits a threshold voltage of 2.3 V, a maximum drain current of 556 mA/mm, a low Ron, sp of 1.45 mΩ·cm2, and a breakdown voltage of 631 V at an off-state current of 1 μA/mm with VGS = 0 V. We have confirmed that a normally-off recessed-gate AlGaN/GaN MIS-HEMT using a TiO2/SiN dual gate-insulator is a promising candidate for power electronic applications.

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