scholarly journals Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7637
Author(s):  
Joshua Grant ◽  
Grey Abernathy ◽  
Oluwatobi Olorunsola ◽  
Solomon Ojo ◽  
Sylvester Amoah ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Great Promise ◽  
High Quality ◽  
Reactor Material ◽  
Monolithically Integrated ◽  
Vapor Deposition Technique

Group-IV alloy GeSn holds great promise for the high-performance optoelectronic devices that can be monolithically integrated on Si for near- and mid-infrared applications. Growth of GeSn using chemical vapor deposition technique with various Sn and Ge precursors has been investigated worldwide. To achieve relatively high Sn incorporation, the use of higher pressure and/or higher order Ge hydrides precursors were reported. In this work, we successfully demonstrated the growth of high-quality GeSn with Sn composition of 16.7% at low pressure of 12 Torr. The alloy was grown using the commercially available GeH4 and SnCl4 precursors via a chemical vapor deposition reactor. Material and optical characterizations were performed to confirm the Sn incorporation and to study the optical properties. The demonstrated growth results reveal a low-pressure growth window to achieve high-quality and high Sn alloys for future device applications.

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

Process Optimization for Synthesis of High-Quality Graphene Films by Low-Pressure Chemical Vapor Deposition

2012 ◽  
Vol 51 (6S) ◽  
pp. 06FD21 ◽  
Author(s):  
Dongheon Lee ◽  
Kihwan Lee ◽  
Saebyuk Jeong ◽  
Juhyun Lee ◽  
Bosik Choi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Process Optimization ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Graphene Films ◽  
Pressure Chemical

New Trends in Wide Bandgap Semiconductors: Synthesis of Single Crystalline Silicon Carbide Layers by Low Pressure Chemical Vapor Deposition Technique on P-Type Silicon (100 and/or 111) and their Characterization

2010 ◽  
Vol 442 ◽  
pp. 195-201
Author(s):  
F. Iqbal ◽  
A. Ali ◽  
A. Mehmood ◽  
M. Yasin ◽  
A. Raja ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Single Crystalline ◽  
Type Silicon ◽  
Vapor Deposition Technique ◽  
Pressure Chemical ◽  
P Type

We report the growth of SiC layers on low cost p-type silicon (100 and/or 111) substrates maintained at constant temperature (1050 - 1350oC, ∆T=50oC) in a low pressure chemical vapor deposition reactor. Typical Fourier transform infrared spectrum showed a dominant peak at 800 cm-1 due to Si-C bond excitation. Large area x-ray diffraction spectra revealed single crystalline cubic structures of 3C-SiC(111) and 3C-SiC(200) on Si(111) and Si(100) substrates, respectively. Cross-sectional views exposed by scanning electron microscopy display upto 104 µm thick SiC layer. Energy dispersive spectroscopy of the layers demonstrated stiochiometric growth of SiC. Surface roughness and morphology of the films were also checked with the help of atomic force microscopy. Resistivity of the as-grown layers increases with increasing substrate temperature due to decrease of isolated intrinsic defects such as silicon and/or carbon vacanies having activation energy 0.59 ±0.02 eV.

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