scholarly journals Sidewall Slope Control of InP Via Holes for 3D Integration

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 89
Author(s):  
Jongwon Lee ◽  
Kilsun Roh ◽  
Sung-Kyu Lim ◽  
Youngsu Kim
Keyword(s):  
Inductively Coupled Plasma ◽  
Sio2 Layer ◽  
Etch Depth ◽  
Rf Power ◽  
3D Integration ◽  
Inductively Coupled ◽  
Wide Range ◽  
Via Holes ◽  
Dry Etch ◽  
Icp Etcher

This is the first demonstration of sidewall slope control of InP via holes with an etch depth of more than 10 μm for 3D integration. The process for the InP via holes utilizes a common SiO2 layer as an InP etch mask and conventional inductively coupled plasma (ICP) etcher operated at room temperature and simple gas mixtures of Cl2/Ar for InP dry etch. Sidewall slope of InP via holes is controlled within the range of 80 to 90 degrees by changing the ICP power in the ICP etcher and adopting a dry-etched SiO2 layer with a sidewall slope of 70 degrees. Furthermore, the sidewall slope control of the InP via holes in a wide range of 36 to 69 degrees is possible by changing the RF power in the etcher and introducing a wet-etched SiO2 layer with a small sidewall slope of 2 degrees; this wide slope control is due to the change of InP-to-SiO2 selectivity with RF power.

Advances in sample digestion using microwave-ultraviolet radiations: phosphorus and sulfur determination in animal feed

2020 ◽  
Vol 16 ◽  
Author(s):  
Diogo L. R. Novo ◽  
Priscila T. Scaglioni ◽  
Rodrigo M. Pereira ◽  
Filipe S. Rondan ◽  
Gilberto S. Coelho Junior ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Animal Feed ◽  
Optical Emission ◽  
Emission Spectrometry ◽  
Official Method ◽  
Dissolved Carbon ◽  
Inductively Coupled ◽  
Relative Standard ◽  
Wide Range ◽  
Sulfur Determination

Background: Conventional analytical methods for phosphorus and sulfur determination in several matrices present normally analytical challenges regarding inaccuracy, detectability and waste generation. Objective: The main objective is proposing a green and feasible analytical method for phosphorus and sulfur determination in animal feed. Methods: Synergic effect between microwave and ultraviolet radiations during sample preparation was evaluated for the first time for the animal feed digestion associated with further phosphorus and sulfur determination by ion chromatography with conductivity detection. Dissolved carbon and residual acidity in final digests were used for the proposed method assessment. Phosphorus and sulfur values were compared with those obtained using conventional microwave-assisted wet digestion in closed vessels associated with inductively coupled plasma optical emission spectrometry and with those obtained using Association of Official Analytical Chemists International official method. Recovery tests and certified reference material analysis were performed. Animal feeds were analyzed using the proposed method. Results: Sample masses of 500 mg were efficiently digested using only 2 mol L -1 HNO3. The results obtained by the proposed method was not differing significantly (p > 0.05) from those obtained by the conventional and official methods. Suitable recoveries (from 94 to 99%), agreement with certified values (101 and 104%) and relative standard deviations (< 8%) were achieved. Phosphorus and sulfur content in commercial products varied in a wide range (P: 5,873 to 28,387 mg kg-1 and S: 2,165 to 4,501 mg kg-1 ). Conclusion: The proposed method is a green, safe, accurate, precise and sensitive alternative for animal feed quality control.

scholarly journals The Survival of Haloferax mediterranei under Stressful Conditions

2021 ◽  
Vol 9 (2) ◽  
pp. 336
Author(s):  
Laura Matarredona ◽  
Mónica Camacho ◽  
Basilio Zafrilla ◽  
Gloria Bravo-Barrales ◽  
Julia Esclapez ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Sea Water ◽  
Industrial Applications ◽  
Growth Responses ◽  
Haloferax Mediterranei ◽  
Inductively Coupled ◽  
Icp Ms ◽  
Wide Range ◽  
High Metal ◽  
Plasma Mass Spectrometry

Haloarchaea can survive and thrive under exposure to a wide range of extreme environmental factors, which represents a potential interest to biotechnology. Growth responses to different stressful conditions were examined in the haloarchaeon Haloferax mediterranei R4. It has been demonstrated that this halophilic archaeon is able to grow between 10 and 32.5% (w/v) of sea water, at 32–52 °C, although it is expected to grow in temperatures lower than 32 °C, and between 5.75 and 8.75 of pH. Moreover, it can also grow under high metal concentrations (nickel, lithium, cobalt, arsenic), which are toxic to most living beings, making it a promising candidate for future biotechnological purposes and industrial applications. Inductively Coupled Plasma Mass Spectrometry (ICP-MS) analysis quantified the intracellular ion concentrations of these four metals in Hfx. mediterranei, concluding that this haloarchaeon can accumulate Li+, Co2+, As5+, and Ni2+ within the cell. This paper is the first report on Hfx. mediterranei in which multiple stress conditions have been studied to explore the mechanism of stress resistance. It constitutes the most detailed study in Haloarchaea, and, as a consequence, new biotechnological and industrial applications have emerged.

Detrital zircon geochronology and provenance of Devono-Mississippian strata in the northern Canadian Cordilleran miogeoclineThis article is one of a series of papers published in this Special Issue on the theme of Geochronology in honour of Tom Krogh.Northwest Territories Geoscience Office Contribution 0047. Geological Survey of Canada Contribution 20100432.

2011 ◽  
Vol 48 (2) ◽  
pp. 515-541 ◽  
Author(s):  
Yvon Lemieux ◽  
Thomas Hadlari ◽  
Antonio Simonetti
Keyword(s):  
Detrital Zircon ◽  
Inductively Coupled Plasma ◽  
Source Region ◽  
Upper Devonian ◽  
Detrital Zircons ◽  
Detrital Zircon Geochronology ◽  
Inductively Coupled ◽  
Arctic Alaska ◽  
Wide Range ◽  
Late Neoproterozoic

U–Pb ages have been determined on detrital zircons from the Upper Devonian Imperial Formation and Upper Devonian – Lower Carboniferous Tuttle Formation of the northern Canadian Cordilleran miogeocline using laser ablation – multicollector – inductively coupled plasma – mass spectrometry. The results provide insights into mid-Paleozoic sediment dispersal in, and paleogeography of, the northern Canadian Cordillera. The Imperial Formation yielded a wide range of detrital zircon dates; one sample yielded dominant peaks at 1130, 1660, and 1860 Ma, with smaller mid-Paleozoic (∼430 Ma), Neoproterozoic, and Archean populations. The easternmost Imperial Formation sample yielded predominantly late Neoproterozoic – Cambrian zircons between 500 and 700 Ma, with lesser Mesoproterozoic and older populations. The age spectra suggest that the samples were largely derived from an extensive region of northwestern Laurentia, including the Canadian Shield, igneous and sedimentary provinces of Canada’s Arctic Islands, and possibly the northern Yukon. The presence of late Neoproterozoic – Cambrian zircon, absent from the Laurentian magmatic record, indicate that a number of grains were likely derived from an exotic source region, possibly including Baltica, Siberia, or Arctic Alaska – Chukotka. In contrast, zircon grains from the Tuttle Formation show a well-defined middle Paleoproterozoic population with dominant relative probability peaks between 1850 and 1950 Ma. Additional populations in the Tuttle Formation are mid-Paleozoic (∼430 Ma), Mesoproterozoic (1000–1600 Ma), and earlier Paleoproterozoic and Archean ages (>2000 Ma). These data lend support to the hypothesis that the influx of sediments of northerly derivation that supplied the northern miogeocline in Late Devonian time underwent an abrupt shift to a source of predominantly Laurentian affinity by the Mississippian.

Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode

2009 ◽  
Vol 615-617 ◽  
pp. 663-666
Author(s):  
In Ho Kang ◽  
Wook Bahng ◽  
Sung Jae Joo ◽  
Sang Cheol Kim ◽  
Nam Kyun Kim
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Diodes ◽  
Annealing Process ◽  
Activation Process ◽  
Electrical Characteristics ◽  
Inductively Coupled ◽  
Edge Termination ◽  
Post Annealing ◽  
Surface Damages ◽  
Dry Etch

The effects of post annealing etch process on electrical performances of a 4H-SiC Schottky diodes without any edge termination were investigated. The post etch was carried out using various dry the dry etch techniques such as Inductively Coupled Plasma (ICP) and Neutral Beam Etch (NBE) in order to eliminate suspicious surface damages occurring during a high temperature ion activation process. The leakage current of diodes treated by NBE measured at -100V was about one order lower than that of diode without post etch and a half times lower than that of diode treated by ICP without a significant degradation of forward electrical characteristics. Based on the above results, the post annealing process was adapted to a junction barrier Schottky diode with a field limiting ring. The blocking voltages of diode without post annealing etch and diodes treated by ICP and NBE were -1038V, -1125V, and -1595V, respectively.

A Comprehensive Review of Minerals, Trace Elements, and Heavy Metals in Saffron

2022 ◽  
Vol 23 ◽  
Author(s):  
Sayyed Mohammad Ali Noori ◽  
Mohammad Hashemi ◽  
Sajjad Ghasemi
Keyword(s):  
Heavy Metals ◽  
Trace Elements ◽  
Inductively Coupled Plasma ◽  
Chemical Elements ◽  
Absorption Spectrometry ◽  
Atomic Emission ◽  
Emission Spectrometry ◽  
Inductively Coupled ◽  
Wide Range ◽  
The World

Abstract: Saffron is one of the most expensive spices in the world, and its popularity as a tasty food additive is spreading rapidly through many cultures and cuisines. Minerals and heavy metals are minor components found in saffron, which play a key role in the identification of the geographical origin, quality control, and food traceability, while they also affect human health. The chemical elements in saffron are measured using various analytical methods, such as techniques based on spectrometry or spectroscopy, including atomic emission spectrometry, atomic absorption spectrometry, inductively coupled plasma optical emission spectrometry, and inductively coupled plasma mass spectrometry. The present study aimed to review the published articles about heavy metals and minerals in saffron across the world. To date, 64 chemical elements have been found in different types of saffron, which could be divided into three groups of macro-elements, trace elements, and heavy metals (trace elements with a lower gravity/greater than five times that of water and other inorganic sources). Furthermore, the chemical elements in the saffron samples of different countries have a wide range of concentrations. These differences may be affected by geographical condition such as physicochemical properties of the soil, weather and other environmental conditions like saffron cultivation and its genotype.

Plasma and electrical characteristics depending on an antenna position in an inductively coupled plasma with a passive resonant antenna

2021 ◽  
Author(s):  
Ju Ho Kim ◽  
Chin-Wook Chung
Keyword(s):  
Inductively Coupled Plasma ◽  
Metal Plate ◽  
Electrical Characteristics ◽  
Coupling Loss ◽  
Rf Power ◽  
Ion Density ◽  
Electron Kinetics ◽  
Inductively Coupled ◽  
Cylindrical Reactor ◽  
Antenna Position

Abstract We investigated the plasma and electrical characteristics depending on the antenna position in an inductively coupled plasma with a passive resonant antenna. When the powered antenna and passive resonant antenna are installed near the top plate and in the middle of the cylindrical reactor (Setup A), respectively, the ion density at the resonance is about 2.4 times to 9 times higher than that at non-resonance. This is explained by the reduction in power loss in the powered antenna (including the matching circuits) and the increase in power absorbed by the plasma discharge. However, when the powered antenna and passive resonant antenna are interchanged (Setup B), the ion density at the resonance is not significantly different from that at the non-resonance. When RF power is changed from 50 W to 200 W, the ion density at the resonance of Setup B is 1.6 times to 5.4 times higher than at the non-resonance of Setup A. To analyse this difference, the profile of the z-axis ion density is measured and the electric and magnetic field simulations are investigated. The results are discussed along with the electron kinetics effect and the coupling loss between the antenna and the metal plate.

scholarly journals Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar ( 11 2 ¯ 2 ) and Non-Polar ( 11 2 ¯ 0 ) GaN Nanorods

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2562
Author(s):  
Pierre-Marie Coulon ◽  
Peng Feng ◽  
Tao Wang ◽  
Philip A. Shields
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Defect Density ◽  
Rf Power ◽  
Resonant Cavities ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Dc Bias ◽  
The Impact

The formation of gallium nitride (GaN) semi-polar and non-polar nanostructures is of importance for improving light extraction/absorption of optoelectronic devices, creating optical resonant cavities or reducing the defect density. However, very limited studies of nanotexturing via dry etching have been performed, in comparison to wet etching. In this paper, we investigate the formation and morphology of semi-polar (112¯2) and non-polar (112¯0) GaN nanorods using inductively coupled plasma (ICP) etching. The impact of gas chemistry, pressure, temperature, radio-frequency (RF) and ICP power and time are explored. A dominant chemical component is found to have a significant impact on the morphology, being impacted by the polarity of the planes. In contrast, increasing the physical component enables the impact of crystal orientation to be minimized to achieve a circular nanorod profile with inclined sidewalls. These conditions were obtained for a small percentage of chlorine (Cl2) within the Cl2 + argon (Ar) plasma combined with a low pressure. Damage to the crystal was reduced by lowering the direct current (DC) bias through a reduction of the RF power and an increase of the ICP power.

Sign in / Sign up

Export Citation Format

Share Document