Growth Mode Diagram for the Epitaxial Growth on the Vicinal Surface of Strained Si (001)

2007 ◽

Vol 124-126 ◽

pp. 547-550

Author(s):

Pil Ryung Cha

Keyword(s):

Epitaxial Growth ◽

Film Growth ◽

Thin Film Growth ◽

Growth Mode ◽

Vicinal Surface ◽

Strained Si ◽

Elastic Interactions ◽

Operation Conditions ◽

Instability Growth ◽

Step Step

We present the linear stability analysis for the epitaxial thin film growth on the vicinal surface of strained Si and the growth mode diagrams of the epitaxial growth under various operation conditions. Competition between step-step elastic interactions and the asymmetry of incorporation of adatoms from the terraces to step edge is considered. Force monopoles at steps and their interaction lead to it on the vicinal surface while kinetic asymmetry of the adatom incorporation at steps due to Ehrlich-Schwoebel barrier prevents the step bunching instability. Growth mode on the vicinal surface is determined by the competition between elastic step-step interactions and Ehrlich-Schwoebel barrier.

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Epitaxial growth of the topological insulator Bi2Se3 on Si(111): Growth mode, lattice parameter, and strain state

Applied Physics Letters ◽

10.1063/1.4821181 ◽

2013 ◽

Vol 103 (11) ◽

pp. 111909 ◽

Cited By ~ 18

Author(s):

M. Vyshnepolsky ◽

C. Klein ◽

F. Klasing ◽

A. Hanisch-Blicharski ◽

M. Horn-von Hoegen

Keyword(s):

Epitaxial Growth ◽

Topological Insulator ◽

Strain State ◽

Lattice Parameter ◽

Growth Mode

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NiSi2/Si interface chemistry and epitaxial growth mode

EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany ◽

10.1007/978-3-540-85226-1_14 ◽

2008 ◽

pp. 27-28

Author(s):

S. B. Mi ◽

C. L. Jia ◽

K. Urban ◽

Q. T. Zhao ◽

S. Mantl

Keyword(s):

Epitaxial Growth ◽

Growth Mode ◽

Interface Chemistry

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Auger electron spectroscopy study of the epitaxial growth mode of (Ca, Sr)F2 on GaAs(100)

Surface Science ◽

10.1016/0039-6028(86)90900-3 ◽

1986 ◽

Vol 168 (1-3) ◽

pp. 681-687 ◽

Cited By ~ 8

Author(s):

C. Fontaine ◽

J.L. Castano ◽

J. Castagné ◽

A. Munoz-Yague

Keyword(s):

Auger Electron Spectroscopy ◽

Epitaxial Growth ◽

Electron Spectroscopy ◽

Auger Electron ◽

Growth Mode ◽

Spectroscopy Study

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Auger electron spectroscopy study of the epitaxial growth mode of (Ca, Sr)F2 on GaAs(100)

Surface Science Letters ◽

10.1016/0167-2584(86)90490-1 ◽

1986 ◽

Vol 168 (1-3) ◽

pp. A138

Author(s):

C. Fontaine ◽

J.L. Castano ◽

J. Castagné ◽

A. Munoz-Yague

Keyword(s):

Auger Electron Spectroscopy ◽

Epitaxial Growth ◽

Electron Spectroscopy ◽

Auger Electron ◽

Growth Mode ◽

Spectroscopy Study

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Surfactant-Mediated Epitaxial Growth of Metallic Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.117.55 ◽

2010 ◽

Vol 117 ◽

pp. 55-61

Author(s):

Masao Kamiko ◽

Ryoichi Yamamoto

Keyword(s):

Thin Film ◽

Thin Films ◽

Epitaxial Growth ◽

Film Growth ◽

Thin Film Growth ◽

Growth Mode ◽

Metallic Thin Films ◽

Layer By Layer ◽

Metallic Films ◽

Heteroepitaxial Growth

The effects of several surfactants on the homoepitaxial and heteroepitaxial growth of metallic films and multilayers have been studied and compared. Our measurements clearly revealed that pre-deposition of a small amount of surfactant prior to the adatom deposition changed thin film growth mode and structure. The pre-deposited surfactant enhanced layer-by-layer (LBL) growth of the homoepitaxial and heteroepitaxial growth of metallic films. The surfactant also enhanced the epitaxial growth of metallic multilayer.

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Maximal monotone operator theory and its applications to thin film equation in epitaxial growth on vicinal surface

Calculus of Variations and Partial Differential Equations ◽

10.1007/s00526-018-1326-x ◽

2018 ◽

Vol 57 (2) ◽

Cited By ~ 3

Author(s):

Yuan Gao ◽

Jian-Guo Liu ◽

Xin Yang Lu ◽

Xiangsheng Xu

Keyword(s):

Thin Film ◽

Epitaxial Growth ◽

Monotone Operator ◽

Maximal Monotone Operator ◽

Operator Theory ◽

Maximal Monotone ◽

Vicinal Surface ◽

Thin Film Equation ◽

Monotone Operator Theory

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CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode

Materials Science Forum ◽

10.4028/www.scientific.net/msf.924.116 ◽

2018 ◽

Vol 924 ◽

pp. 116-119 ◽

Cited By ~ 3

Author(s):

Shi Yang Ji ◽

Ryoji Kosugi ◽

Kazutoshi Kojima ◽

Kazuhiro Mochizuki ◽

Yasuyuki Kawada ◽

...

Keyword(s):

Aspect Ratio ◽

Epitaxial Growth ◽

Growth Rates ◽

Low Risk ◽

Growth Mode ◽

Flow Rates ◽

Defect Generation ◽

Selective Epitaxial Growth ◽

Dependent Growth

By mapping the source and HCl flow rates dependent growth rates, the evolving trend of a quasi-selective epitaxial growth (quasi-SEG) that growing very thin epilayer on mesa top and ensuring an extremely low risk of voids defect generation was firstly figured out on a 5-μm 4H-SiC trench. Then, basing on the acquired knowledge, a 25-μm 4H-SiC trench with an aspect ratio up to ~10 was completely filled in the quasi-SEG mode.

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