A Sub-1V High Precision CMOS Bandgap Reference

2013 ◽  
Vol 427-429 ◽  
pp. 1097-1100
Author(s):  
Qian Neng Zhou ◽  
Rong Xue ◽  
Hong Juan Li ◽  
Jin Zhao Lin ◽  
Yun Song Li ◽  
...  
Keyword(s):  
Temperature Coefficient ◽  
Power Supply ◽  
Output Voltage ◽  
Supply Voltage ◽  
Piecewise Linear ◽  
Cmos Process ◽  
Bandgap Reference ◽  
Power Supply Voltage ◽  
Compensation Technique ◽  
Simulation Results

In this paper, a low temperature coefficient bandgap voltage (BGR) is designed for A/D converter by adopting piecewise-linear compensation technique. The designed BGR is analyzed and simulated in SMIC 0.18μm CMOS process. Simulation results show that the PSRR of the designed BGR achieves-72.51dB, -72.49dB, and-70.58dB at 10Hz, 100Hz and 1kHz respectively. The designed BGR achieve the temperature coefficient of 1.57 ppm/°C when temperature is in the range from-35°C to 125°C. When power supply voltage VDD changes from 1V to 7V, the deviation of the designed BGR output voltage VREF is only 4.465μV.

A Curvature-Compensated, High Power Supply Rejection CMOS Bandgap Reference for MEMS Micro-Accelerometer

2011 ◽  
Vol 483 ◽  
pp. 481-486 ◽  
Author(s):  
Xiao Wei Liu ◽  
Bing Jun Lv ◽  
Peng Fei Wang ◽  
Liang Yin ◽  
Na Xu
Keyword(s):  
Temperature Coefficient ◽  
High Power ◽  
Power Supply ◽  
Supply Voltage ◽  
Reference Voltage ◽  
Cmos Process ◽  
Bandgap Reference ◽  
Power Supply Rejection Ratio ◽  
Compensation Technique ◽  
Supply Rejection

The reference is an important part in the accelerometer system. With the development of science and technology, the request of the performance of accelerometers is increasingly higher and the precision of reference directly affects the performance of accelerometers. Therefore, a reference voltage applicable to accelerometers is presented based on the analysis of basic principles of conventional bandgap reference (BGR) in this paper. A high-order curvature compensation technique, which uses a temperature dependent resistor ratio generated by a high poly resistor and a nwell resistor, effectively serves to reduce temperature coefficient of proposed reference voltage circuit and to a large extent improve its performance. To achieve a high power supply rejection ratio (PSRR) over a broad frequency range, a pre-regulator is introduced to remain the supply voltage of the core circuit of BGR relatively independent of the global supply voltage. The proposed circuitry is designed in standard 2.0μm CMOS process. The simulated result shows that the average temperature coefficient is less than 2ppm/°C in the temperature range from -40 to 120°C. The improvement on temperature coefficient (TC) is about 10 times reduction compared to the conventional approach. And the PSR at DC frequency and 1kHz achieves -107 and -71dB respectively at 9.0V supply voltage.

A Bandgap Reference with Temperature Coefficient of 13.2 ppm/°C

2014 ◽  
Vol 981 ◽  
pp. 66-69
Author(s):  
Ming Yuan Ren ◽  
En Ming Zhao
Keyword(s):  
Power Supply ◽  
Process Simulation ◽  
Output Voltage ◽  
Operating Temperature ◽  
Cmos Process ◽  
Bandgap Reference ◽  
Analysis Method ◽  
Operation Condition ◽  
Reference Circuit ◽  
Simulation Results

This paper presents a design and analysis method of a bandgap reference circuit. The Bandgap design is realized through the 0.18um CMOS process. Simulation results show that the bandgap circuit outputs 1.239V in the typical operation condition. The variance rate of output voltage is 0.016mV/°C? with the operating temperature varying from-60°C? to 160°C?. And it is 3.27mV/V with the power supply changes from 1.8V to 3.3V.

Single Inductor Bipolar Outputs DC-DC Converter with Current Mode Control Circuit

2013 ◽  
Vol 534 ◽  
pp. 220-226 ◽  
Author(s):  
Nobukazu Takai ◽  
Takashi Okada ◽  
Kenji Takahashi ◽  
Hajime Yokoo ◽  
Shunsuke Miwa ◽  
...  
Keyword(s):  
Power Supply ◽  
Supply Voltage ◽  
Current Mode ◽  
Cmos Process ◽  
Power Supply Voltage ◽  
Negative Power ◽  
Current Mode Control ◽  
Mode Control ◽  
Digital Still Camera ◽  
Simulation Results

Mobile equipment such as organic-EL display, digital still camera and so on re-quire both positive and negative power supply voltage to obtain high quality. Single InductorMultiple-Output (SIMO) DC-DC converter can provide a pair of positive and negative outputvoltages with only one external inductor. This paper describes SIMO DC-DC Converter usingproposed current-mode control (CMC) circuit. The proposed CMC circuit realizes high responsespeed for the change of load current. Spectre simulations with 0.18m CMOS process parameterare performed to verify the validity of the proposed converter. The simulation results indicatethat the proposed converter has higher response time compared with conventional converter.

scholarly journals None Operational Amplifier (OPA) Based: Design of Analogous Bandgap Reference Voltage

2018 ◽  
Vol 201 ◽  
pp. 02002
Author(s):  
Hao-Ping Chan ◽  
Yu-Cherng Hung
Keyword(s):  
Temperature Coefficient ◽  
Operational Amplifier ◽  
Supply Voltage ◽  
Reference Voltage ◽  
Cmos Process ◽  
Bandgap Reference ◽  
Chip Design ◽  
Chip Area ◽  
Voltage Variation ◽  
Current Variation

By using 0.35-um CMOS process, this work achieves a design of analogous band-gap reference voltage circuit with low temperature coefficient. The proposed circuit operates at 3V and generates a reference current of 44 uA. The HSPICE simulation results show the temperature coefficient of this circuit is 23 ppm/°C at range of -10 °C to 100 °C, and the line regulation (the ratio of output current variation to supply voltage variation) is estimated as 1.95 uA/V from supply voltage variation of 3 V to 5 V. The experimental chip is fabricated and measured. The circuit provides adjustable capability for output voltage among temperature variation of -10 - 100 °C. The chip area is 534 × 695 um2. In this new design, the operational amplifier is not necessary. The chip design effort can be great reduced.

Low Power FGSRAM Cell Using Sleepy and LECTOR Technique

2016 ◽  
Vol 4 (2) ◽  
pp. 333 ◽  
Author(s):  
Kanan Bala Ray ◽  
Sushanta Kumar Mandal ◽  
Shivalal Patro
Keyword(s):  
Low Power ◽  
Power Supply ◽  
High Stability ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Floating Gate ◽  
Power Supply Voltage ◽  
Operation Analysis ◽  
Sram Cell ◽  
Simulation Results

<em>In this paper floating gate MOS (FGMOS) along with sleep transistor technique and leakage control transistor (LECTOR) technique has been used to design low power SRAM cell. Detailed investigation on operation, analysis and result comparison of conventional 6T, FGSRAM, FGSLEEPY, FGLECTOR and FGSLEEPY LECTOR has been done. All the simulations are done in Cadence Virtuoso environment on 45 nm standard CMOS technology with 1 V power supply voltage. Simulation results show that FGSLEEPY LECTOR SRAM cell consumes very low power and achieves high stability compared to conventional FGSRAM Cell</em>

A High-Order CMOS Bandgap Voltage Reference

2014 ◽  
Vol 989-994 ◽  
pp. 1165-1168
Author(s):  
Qian Neng Zhou ◽  
Yun Song Li ◽  
Jin Zhao Lin ◽  
Hong Juan Li ◽  
Chen Li ◽  
...  
Keyword(s):  
Power Supply ◽  
Supply Voltage ◽  
Absolute Temperature ◽  
High Order ◽  
Cmos Process ◽  
Voltage Reference ◽  
Power Supply Voltage ◽  
Power Supply Rejection Ratio ◽  
Voltage Deviation ◽  
Bandgap Voltage Reference

A high-order bandgap voltage reference (BGR) is designed by adopting a current which is proportional to absolute temperature T1.5. The high-order BGR is analyzed and simulated in SMIC 0.18μm CMOS process. Simulation results show that the designed high-order BGR achieves temperature coefficient of 2.54ppm/°C when temperature ranging from-55°C to 125°C. The high-order BGR at 10Hz, 100Hz, 1kHz, 10kHz and 100kHz achieves, respectively, the power supply rejection ratio of-64.01dB, -64.01dB, -64dB, -63.5dB and-53.2dB. When power supply voltage changes from 1.7V to 2.5V, the output voltage deviation of BGR is only 617.6μV.

A High-Order Curvature-Compensated Bandgap Voltage Reference for Micro-Gyroscope

2012 ◽  
Vol 503 ◽  
pp. 12-17
Author(s):  
Qiang Li ◽  
Xiao Yun Tan ◽  
Guan Shi Wang
Keyword(s):  
Power Supply ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Bandgap Reference ◽  
Voltage Reference ◽  
Temperature Dependent ◽  
Power Supply Voltage ◽  
Gyroscope System ◽  
Bandgap Voltage Reference ◽  
Reference Circuit

The reference is an important part of the micro-gyroscope system. The precision and stability of the reference directly affect the precision of the micro-gyroscope. Unlike the traditional bandgap reference circuit, a circuit using a temperature-dependent resistor ratio generated by a highly-resistive poly resistor and a diffusion resistor in CMOS technology is proposed in this paper. The complexity of the circuit is greatly reduced. Implemented with the standard 0.5μm CMOS technology and 9V power supply voltage, in the range of -40~120°C, the temperature coefficient of the proposed bandgap voltage reference can achieve to about 1.6 ppm/°C. The PSRR of the circuit is -107dB.

scholarly journals None Operational Amplifier (OPA) Based: Design of Analogous Bandgap Reference Voltage

2016 ◽  
Author(s):  
Hao-Ping Chan ◽  
Yu-Cherng Hung
Keyword(s):  
Temperature Coefficient ◽  
Operational Amplifier ◽  
Supply Voltage ◽  
Reference Voltage ◽  
Cmos Process ◽  
Bandgap Reference ◽  
Chip Design ◽  
Chip Area ◽  
Voltage Variation ◽  
Current Variation

By using 0.35-um CMOS process, this work achieves a design of analogous band-gap reference voltage circuit with low temperature coefficient. The proposed circuit operates at 3V and generates a reference current of 44 uA. The HSPICE simulation results show the temperature coefficient of this circuit is 23 ppm/℃ at range of -10 ℃ to 100 ℃, and the line regulation (the ratio of output current variation to supply voltage variation) is estimated as 1.95 uA/V from supply voltage variation of 3 V to 5 V. The experimental chip is fabricated and measured. The circuit provides adjustable capability for output voltage among temperature variation of -10 - 100 ℃. The chip area is 534 &times; 695 um^2. In this new design, the operational amplifier is not necessary. The chip design effort can be great reduced.

A High Order Curvature-Compensated Bandgap Voltage Reference with a Novel Error Amplifier

2017 ◽  
Vol 26 (09) ◽  
pp. 1750127 ◽  
Author(s):  
Gongyuan Zhao ◽  
Mao Ye ◽  
Yiqiang Zhao ◽  
Kai Hu ◽  
Ruishan Xin
Keyword(s):  
Monte Carlo Simulation ◽  
Power Supply ◽  
Supply Voltage ◽  
High Order ◽  
Cmos Process ◽  
Voltage Reference ◽  
Temperature Dependent ◽  
Error Amplifier ◽  
Bandgap Voltage Reference ◽  
Simulation Results

This paper presents a bandgap voltage reference (BGR), utilizing high order curvature-compensated technique with the temperature dependent resistor. Based on an improved error amplifier, [Formula: see text]80[Formula: see text]dB power supply rejection (PSR) @1[Formula: see text]kHz is achieved without additional complicated circuits. The circuit is fabricated in a standard [Formula: see text]m CMOS process, consuming 50[Formula: see text][Formula: see text]A at 25[Formula: see text]C with a supply voltage of 3.3[Formula: see text]V. Simulation results show that the proposed BGR can achieve a temperature coefficient as low as 1.18[Formula: see text]ppm/[Formula: see text]C over the temperature range from [Formula: see text]C to 120[Formula: see text]C. Monte Carlo simulation and Experimental Results validate the design.

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