Finite Element Analysis on Structural Stress of 8×8 Infrared Focal Plane Array Integrating with Microlens Arrays

2012 ◽  
Vol 442 ◽  
pp. 162-166
Author(s):  
Li Wen Zhang ◽  
Ming Shao ◽  
Qiang Yu ◽  
Peng Fei Li
Keyword(s):  
Finite Element Analysis ◽  
Finite Element ◽  
Focal Plane ◽  
Maximum Stress ◽  
Focal Plane Array ◽  
Structural Stress ◽  
Element Analysis ◽  
Microlens Arrays ◽  
Infrared Focal Plane Array ◽  
Indium Bump

Based on finite element analysis, the structural stress of 8×8 InSb Infrared Focal Plane Array integrating with microlens arrays dependent on indium bump sizes is systemically researched. Simulation results show that as the diameters of indium bump increase from 16μm to 38μm in step of 2μm, the maximum stress existing in InSb chip first reduces, then increases, and reaches minimum with indium bump diameter 32μm. Yet the maximum stress in the indium bump array is almost unchangeable and keeps at 16.5MPa. The maximum stress in Si readout integrated circuit almost half stress in InSb chip. Besides, the stress appearing on those regions situating just on microlens array is much smaller than its surrounding regions, and the stress distribution is uniform at contacting areas between InSb chip and indium bump.

Finite Element Analysis on Structural Stress of 8×8 InSb Infrared Focal Plane Array

2010 ◽  
Vol 34-35 ◽  
pp. 207-211 ◽  
Author(s):  
Qing Duan Meng ◽  
Xiao Ling Zhang ◽  
Xiao Lei Zhang ◽  
Wei Guo Sun
Keyword(s):  
Finite Element ◽  
Focal Plane ◽  
Maximum Stress ◽  
Focal Plane Array ◽  
Von Mises Stress ◽  
Design Parameters ◽  
Structural Stress ◽  
Infrared Focal Plane Array ◽  
Indium Bump ◽  
Von Mises

Based on viscoplastic Anand’s model, the structural stress of 8×8 InSb infrared focal plane array (IRFPA) detector is systemically analyzed by finite element method, and the impacts of design parameters including indium bump diameters, heights and InSb chip thicknesses on both von Mises stress and its distribution are discussed in this manuscript. Simulation results show that as the diameters of indium bump decreases from 36 μm to 24 μm in step of 2 μm, the maximum stress existing in InSb chip reduces first, increases then linearly with reduced indium bump diameters, and reaches minimum with indium bump diameter 30 μm, the stress distribution at the contacts areas is uniform and concentrated. Furthermore, the varied tendency has nothing to do with indium bump standoff height. With indium bump diameter 30 μm, as the thickness of InSb chip reduces from 21 μm to 9 μm in step of 3 μm, the varying tendency of the maximum stress value in InSb chip is just like the letter U, as the indium bump thickness decreases also from 21 μm to 6 μm in step of 3 μm, the maximum stress in 8×8 InSb IRPFA decreases from 260 MPa to 102 MPa, which is the smallest von Mises stress value obtained with the indium diameter 30 μm, thickness 9 μm and InSb thickness 12 μm.

Finite Element Analysis on Structural Stress of Large Format InSb Infrared Focal Plane Array

2010 ◽  
Vol 152-153 ◽  
pp. 1721-1725 ◽  
Author(s):  
Qing Duan Meng ◽  
Qing Song Lin ◽  
Xiao Lei Zhang ◽  
Wei Guo Sun
Keyword(s):  
Finite Element ◽  
Stress Distribution ◽  
Focal Plane ◽  
Focal Plane Array ◽  
Von Mises Stress ◽  
Bottom Surface ◽  
Element Analysis ◽  
Infrared Focal Plane Array ◽  
Indium Bump ◽  
Von Mises

Two-step method is used to research stress and its distribution in 64×64 InSb infrared focal plane array (IRFPA) employing finite element method. First, a small 8×8 InSb IRFPA is studied by changing indium bump diameters from 24μm to 36μm, with indium bump thickness 20μm and InSb thickness 10μm, the simulated results show that von Mises stress in InSb chip is dependent on indium bump diameters, the varying tendency is just like the letter V, here when indium bump diameters is set to 30μm, the smallest von Mises stress is achieved and its distribution in InSb chip is uniform at contacting areas. Then, InSb IRFPA array scale is doubled once again from 8×8 to 64×64 to learn the effect from array size, thus, the stress and its distribution of 64×64 InSb IRFPA is obtained in a short time. Simulation results show that von Mises stress maximum in InSb chip and Si readout integrated circuit almost do not increases with array scale, and the largest von Mises stress is located in InSb chips. Besides, stress distribution on the bottom surface of InSb chip is radiating, and decreases from core to four corners, and stress value at contacting area is smaller than those on its surrounding areas, contrary to stress distribution on top surface of InSb chip.

Finite Element Analysis on Structural Stress of 8×8 InSb Infrared Focal Plane Array with Underfill

2011 ◽  
Vol 201-203 ◽  
pp. 108-112
Author(s):  
Qing Duan Meng ◽  
Li Gong Sun ◽  
Jie Xin Pu
Keyword(s):  
Finite Element ◽  
Focal Plane ◽  
Chip Thickness ◽  
Focal Plane Array ◽  
Von Mises Stress ◽  
Structural Stress ◽  
Infrared Focal Plane Array ◽  
Bump Height ◽  
Indium Bump ◽  
Von Mises

Based on viscoplastic Anand’s model, the structural stress of 8×8 InSb infrared focal plane array (IRFPA) detector is systemically analyzed by finite element method, and the impacts of design parameters including indium bump diameters, heights and InSb chip thicknesses on both Von Mises stress and its distribution are discussed in this manuscript. Simulation results show that the maximum stress existing in InSb chip reaches minimum with indium bump diameter 32μm. Under this condition, for the fixed indium height, as the InSb chip thickness reduces from 21µm to 9µm in step of 3µm, Von Mises stress maximum values of InSb chip seems increases gradually, and when the indium bump height reduces from 21µm to 9µm in step of 3µm, its maximum Von Mises stress increase at random increment, do not show certain rules, and indium bump height seems to have a comparable effect on stress value with InSb chip thickness. When indium diameter, height and InSb chip thickness are set to 32µm, 15µm, and 12µm, respectively, the maximal Von Mises value existing in InSb chip reaches minimal value 628MPa, simultaneously the stress distribution at the contacts areas is uniform and concentrated, and this structure is promising to avoid device invalidation.

Finite Element Analysis on Structural Stress of 16×16 InSb IRFPA with Viscoelastic Underfill

2011 ◽  
Vol 314-316 ◽  
pp. 530-534 ◽  
Author(s):  
Li Wen Zhang ◽  
Jin Chan Wang ◽  
Qian Yu ◽  
Qing Duan Meng
Keyword(s):  
Finite Element ◽  
Maximum Stress ◽  
Viscoelastic Model ◽  
Finite Element Method Simulation ◽  
Von Mises Stress ◽  
Structural Stress ◽  
Element Analysis ◽  
Indium Bump ◽  
Final Yield ◽  
Von Mises

The thermal stress and strain, from the thermal mismatch of neighboring materials, are the major causes of fracture in InSb IRFPA. Basing on viscoelastic model describing underfill, the structural stress of 16×16 InSb IRFPA under thermal shock is studied with finite element method. Simulation results show that as the diameters of indium bump increase from 20μm to 36μm in step of 2μm, the maximum stress existing in InSb chip first increases slightly, and fluctuates near 28µm, then decreases gradually. Furthermore, the varied tendency seems to have nothing to do with indium bump standoff height, and with thicker indium bump height, the maximal Von Mises stress in InSb chip is smaller. All these mean that the thicker underfill is in favor of reducing the stress in InSb chip and improving the final yield.

Finite Element Analysis on Structural Stress of 64×64 InSb Infrared Focal Plane Array

2010 ◽  
Vol 34-35 ◽  
pp. 212-216 ◽  
Author(s):  
Qing Duan Meng ◽  
Xiao Ling Zhang ◽  
Xiao Lei Zhang ◽  
Wei Guo Sun
Keyword(s):  
Finite Element ◽  
Stress Distribution ◽  
Focal Plane ◽  
Focal Plane Array ◽  
Von Mises Stress ◽  
Bottom Surface ◽  
Element Analysis ◽  
Infrared Focal Plane Array ◽  
Stress Maximum ◽  
Von Mises

Two-step method is used to research stress and its distribution in 64×64 InSb infrared focal plane array (IRFPA) employing finite element method. First, a small 8×8 InSb IRFPA is systemically studied by varying indium bump diameters, standoff heights and InSb chip thicknesses in suitable range, with indium diameter 30μm, thickness 9μm and InSb thickness 12μm, von Mises stress in InSb chip is the smallest and its distribution is uniform at contacting areas. Then, the sizes of InSb IRFPA is doubled once again from 8×8 to 64×64 to learn the effect from chip sizes, thus, the stress and its distribution of 64×64 InSb IRFPA is obtained in a short time. Simulation results show that von Mises stress maximum in InSb chip almost increases linearly with array scale, yet von Mises stress maximum in Si ROIC decreases slightly with increased array sizes, and the largest von Mises stress is located in InSb chips. Besides, stress distribution on the bottom surface of InSb chip is radiating, and decreases from core to four corners, and stress value at contacting area is smaller than those on its surrounding areas, contrary to stress distribution on top surface of InSb chip.

Bionic design of the tower for wind turbine

2021 ◽  
pp. 095440622110046
Author(s):  
Yuqiao Zheng ◽  
Fugang Dong ◽  
Huquan Guo ◽  
Bingxi Lu ◽  
Zhengwen He
Keyword(s):  
Finite Element Analysis ◽  
Finite Element ◽  
Maximum Stress ◽  
Natural Frequencies ◽  
Bionic Design ◽  
Analytic Hierarchy ◽  
Element Analysis ◽  
Maximum Deformation ◽  
Overall Stability ◽  
Biological Selection

The study obtains a methodology for the bionic design of the tower for wind turbines. To verify the rationality of the biological selection, the Analytic Hierarchy Procedure (AHP) is applied to calculate the similarity between the bamboo and the tower. Creatively, a bionic bamboo tower (BBT) is presented, which is equipped with four reinforcement ribs and five flanges. Further, finite element analysis is employed to comparatively investigate the performance of the BBT and the original tower (OT) in the static and dynamic. Through the investigation, it is suggested that the maximum deformation and maximum stress can be reduced by 5.93 and 13.75% of the BBT. Moreover, this approach results in 3% and 1.1% increase respectively in the First two natural frequencies and overall stability.

Elastic Thermal Stresses in Bimetallic Pipe Welds

1980 ◽  
Vol 102 (4) ◽  
pp. 430-432 ◽  
Author(s):  
R. D. Blevins
Keyword(s):  
Finite Element Analysis ◽  
Finite Element ◽  
Stress Intensity ◽  
Maximum Stress ◽  
Thermal Stresses ◽  
Simple Expression ◽  
Element Analysis ◽  
Maximum Stress Intensity ◽  
Bimetallic Pipe ◽  
Uniform Change

The elastic thermal stresses in a welded transition between two pipes of the same size but different alloys are explored. A stress-free temperature is postulated and the stress due to a uniform change in temperature is characterized by the maximum stress intensity in the weld. A simple expression for predicting this maximum stress intensity is developed based on the results of finite element analysis.

Strength-based design of a sunflower stalk cutter machine design using finite element analysis and experimental validation

2021 ◽  
pp. 095440622110597
Author(s):  
Gürkan İrsel
Keyword(s):  
Finite Element Analysis ◽  
Finite Element ◽  
Stress Analysis ◽  
Strain Gage ◽  
Experimental Validation ◽  
Experimental Studies ◽  
Fatigue Analysis ◽  
Structural Stress ◽  
Element Analysis ◽  
Strength Based

In this study, the total algorithm of the strength-based design of the system for mass production has been developed. The proposed algorithm, which includes numerical, analytical, and experimental studies, was implemented through a case study on the strength-based structural design and fatigue analysis of a tractor-mounted sunflower stalk cutting machine (SSCM). The proposed algorithm consists of a systematic engineering approach, material selection and testing, design of the mass criteria suitability, structural stress analysis, computer-aided engineering (CAE), prototype production, experimental validation studies, fatigue calculation based on an FE model and experimental studies (CAE-based fatigue analysis), and an optimization process aimed at minimum weight. Approximately 85% of the system was designed using standard commercially available cross-section beams and elements using the proposed algorithm. The prototype was produced, and an HBM data acquisition system was used to collect the strain gage output. The prototype produced was successful in terms of functionality. Two- and three-dimensional mixed models were used in the structural analysis solution. The structural stress analysis and experimental results with a strain gage were 94.48% compatible in this study. It was determined using nCode DesignLife software that fatigue damage did not occur in the system using the finite element analysis (FEA) and experimental data. The SSCM design adopted a multi-objective genetic algorithm (MOGA) methodology for optimization with ANSYS. With the optimization solved from 422 iterations, a maximum stress value of 57.65 MPa was determined, and a 97.72 kg material was saved compared to the prototype. This study provides a useful methodology for experimental and advanced CAE techniques, especially for further study on complex stress, strain, and fatigue analysis of new systematic designs desired to have an optimum weight to strength ratio.

Optimization of indium bump preparation in infrared focal plane array fabrication

2014 ◽  
Author(s):  
Zhijin Hou ◽  
Junjie Si ◽  
Wei Wang ◽  
Haizhen Wang ◽  
Liwen Wang
Keyword(s):  
Focal Plane ◽  
Focal Plane Array ◽  
Infrared Focal Plane Array ◽  
Indium Bump ◽  
Array Fabrication
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