XPS Studies on ZrO2 Thin Films Deposited on Glass Substrate by Sol-Gel

2008 ◽  
Vol 368-372 ◽  
pp. 1277-1279 ◽  
Author(s):  
Xin Gang Yu ◽  
Yi Gong ◽  
Wen Yue Bi ◽  
Xue Chun Tian ◽  
Hong Wen Ma ◽  
...  

The chemical composition and the valence state of elements on the surface of ZrO2 thin films deposited on glass substrates have been studied by X-ray photoelectron spectroscopy. Results show that: elements of Na, Mg, Zr, Ca exist in the form of their respective stable state, such as Na2O, MgO, ZrO2, CaO, when heat treated at 500°C for 0.5h; but Si is unstable, and exhibit stoichiometrical disturbances. Results of chemical composition and their content by atom percent of ZrO2 thin films surface reveal that: Si, and Ca diffuse from glass to the thin films in scale; Na diffuses few and Mg collects to the thin films surface. The diffusion of Mg2+ and Ca2+ from glass to ZrO2 thin films is negative diffusion.

2007 ◽  
Vol 336-338 ◽  
pp. 2652-2654
Author(s):  
Xin Gang Yu ◽  
Lan Yun Liu ◽  
Yi Gong ◽  
Hong Wen Ma ◽  
Wen Yue Bi ◽  
...  

The influence of heat-treated temperature and the CeO2 content on the chemical composition and the valence state of elements on surface of ZrO2-CeO2 thin films deposited on metal substrates has been studied by X-ray photoelectron spectroscopy. Results show that: elements of Fe, Cr, Zr, Ce exist in the form of their respective stable state, such as Fe2O3, (Fe0.6Cr0.4)O3, ZrO2, CeO2, when heat treated at 600°C and 700°C for 2h respectively; with the increase of heat-treated temperature, the area of oxygen with O1s peak corresponding to value of bonding energy 529.28ev increases, but the area of oxygen with O1s peak corresponding to value of bonding energy 531.7ev decreases.


2005 ◽  
Vol 475-479 ◽  
pp. 1647-1650 ◽  
Author(s):  
Xin Gang Yu ◽  
Hong Wen Ma ◽  
Fei Long ◽  
Hui Feng Zhao ◽  
Wenrue Bi ◽  
...  

Through X-ray photoelectron spectroscopy, by the aid of Ar+ sputtering, chemical composition and the valence state of elements on surface and at depth of TiO2-SiO2 thin films and metal substrates have been studied. Results show that: on surface, elements of Cr, Mn, Ti, Fe exist in the form of their respective stable state, but Si is unstable and exhibits stoichiometrical disturbance when heat treated at 800°C; at depth, after sputtering for 5 minutes and 17 minutes, elements of Cr, Mn, Ti and Ni exist in the form of their respective stable state, but Si and Fe are unstable and exhibit stoichiometrical disturbances; at depth, after sputtering for 57 minutes, all of the Cr, Mn, Ti, Si, Ni and Fe exist in the form of their respective stable state. Results of chemical composition and their content by weight percent of TiO2-SiO2 thin films and metal substrates reveal that: Fe, Cr, and Mn diffuse from metal substrates to the thin films in scale; Ni diffuses few and Si collects to the metal substrate surface


Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.


2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.


2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.


Author(s):  
Jie Chen ◽  
Jun Wang

Hexagon-shaped Zn oxide nano-pole films with terraces and steps have been successfully fabricated by means of a combined approach involving sol-gel process, high-temperature heat treatment, and the hydrothermal method. The surface chemistry and morphological features of the films were characterized by means of x-ray photoelectron spectroscopy and scanning electron microcopy. All the diffraction peaks in x-ray diffraction pattern match with those of the hexagonal wurtzite phase of Zn oxide. Transmittance measurements show that the optical transmittance of the sample synthesized at 520°C on quartz glass substrate is the highest, reaching about 65% in the visible-light region. Based on the detailed structural characterization and the nucleation-growth kinetics, we find that the whole crystallization process of wurtzite Zn oxide nano-poles includes nanocatalysis and layer-by-layer growth mechanism. The present study provides an important understanding of the growth mechanism for nano-pole synthesis of Zn oxide and related materials.


2019 ◽  
Vol 9 (21) ◽  
pp. 4509
Author(s):  
Weijia Yang ◽  
Fengming Wang ◽  
Zeyi Guan ◽  
Pengyu He ◽  
Zhihao Liu ◽  
...  

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.


2009 ◽  
Vol 79-82 ◽  
pp. 747-750 ◽  
Author(s):  
Dong Qing Liu ◽  
Wen Wei Zheng ◽  
Hai Feng Cheng ◽  
Hai Tao Liu

Thermochromic vanadium dioxide (VO2) exhibits a semi-conducting to metallic phase transition at about 68°C, involving strong variations in electrical and optical properties. A simple method was proposed to prepare VO2 thin films from easily gained V2O5 thin films. The detailed thermodynamic calculation was done and the results show that V2O5 will decompose to VO2 when the post annealing temperature reaches 550°C at the atmospheric pressure of less than 0.06Pa. The initial V2O5 films were prepared by sol-gel method on fused-quartz substrates. Different post annealing conditions were studied. The derived VO2 thin film samples were characterized using X-ray diffraction and X-ray photoelectron spectroscopy. The electrical resistance and infrared emissivity of VO2 thin films under different temperatures were measured. The results show that the VO2 thin film derived from the V2O5 thin film annealed at 550°C for 10 hours is pure dioxide of vanadium without other valences. It was observed that the resistance of VO2 thin film with thickness about 600nm can change by 4 orders of magnitude and the 7.5-14μm emissivity can change by 0.6 during the phase transition.


2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
E. Barrera-Calva ◽  
J. Méndez-Vivar ◽  
M. Ortega-López ◽  
L. Huerta-Arcos ◽  
J. Morales-Corona ◽  
...  

Silica-copper oxide (silica-CuO) composite thin films were prepared by a dipping sol-gel route using ethanolic solutions comprised TEOS and a copper-propionate complex. Sols with different TEOS/Cu-propionate (Si/Cu) molar ratios were prepared and applied on stainless steel substrates using dipping process. During the annealing process, copper-propionate complexes developed into particulate polycrystalline CuO dispersed in a partially crystallized silica matrix, as indicated by the X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses. The gel thermal analysis revealed that the prepared material might be stable up to400°C. The silica-CuO/stainless steel system was characterized as a selective absorber surface and its solar selectivity parameters, absorptance (α), and emittance (ε) were evaluated from UV-NIR reflectance data. The solar parameters of such a system were mostly affected by the thickness and phase composition of theSiO2-CuO film. Interestingly, the best solar parameters (α= 0.92 andε= 0.2) were associated to the thinnest films, which comprised a CuO-Cu2Omixture immersed in the silica matrix, as indicated by XPS.


2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.


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