p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

2003 ◽  
Vol 433-436 ◽  
pp. 969-974
Author(s):  
Alexander M. Ivanov ◽  
Nikita B. Strokan ◽  
D.V. Davydov ◽  
N.S. Savkina ◽  
Anatoly M. Strel'chuk ◽  
...  
Keyword(s):  
Ionization Radiation ◽  
The Creation ◽  
P Type ◽  
Sic Films

N and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle Detectors

2002 ◽  
Vol 389-393 ◽  
pp. 1439-1444 ◽  
Author(s):  
Alexander M. Ivanov ◽  
Nikita B. Strokan ◽  
Alexander A. Lebedev ◽  
D.V. Davydov ◽  
N.S. Savkina ◽  
...  
Keyword(s):  
Particle Detectors ◽  
Nuclear Particle ◽  
The Creation ◽  
P Type ◽  
Sic Films

Growth, Doping, Device Development and Characterization of CVD Beta-SiC Epilayers on Si(100) and Alpha-SiC(0001)

1987 ◽  
Vol 97 ◽  
Author(s):  
H. Kong ◽  
H. J. Kim ◽  
J. A. Edmond ◽  
J. W. Palmour ◽  
J. Ryu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Elevated Temperatures ◽  
Deep Level ◽  
Schottky Diodes ◽  
Free Carriers ◽  
Device Development ◽  
Post Annealing ◽  
P Type ◽  
Sic Films

ABSTRACTMonocrystalline β-SiC films have been chemically vapor deposited on Si(100) and c-SiC(0001) at 1660K-1823K and 0.1 MPa using SiH4 and C2H4 carried in H2. Films grown directly on Si(100) contained substantial concentrations of dislocations, stacking faults and antiphase boundaries (APB); those on α-SiC(0001) contained double positioning boundaries. Both the APBs and the double positioning boundaries were eliminated by using off-axis orientations of the respective substrates. Films produced on Si(100) have also been doped during growth and via ion implantation with B or Al (p-type) or P or N (n-type) at LN, room and elevated temperatures. Results from the former procedure showed the ionized dopant/total dopant concentration ratios for N, P, B and Al to be 0.1, 0.2, 0.002 and 0.01, respectively. The solubility limits of N, P and B at 1660K were determined to be ∼ 2E20, 1E18 and 8E18 cm−3, respectively; that of Al exceeds 2E19 cm−3. High temperature ion implantation coupled with dynamic and post annealing resulted in a markedly reduced defect concentration relative to that observed in similar research at the lower temperatures. Schottky diodes, p-n junctions, and MOSFET devices have been fabricated. The p-n junctions have the characteristics of insulators containing free carriers and deep level traps. The MOSFETs show very good I-V characteristics up to 673K, but have not been optimized.

The Growth of Si on SiC Complex Substrate by CVD

2012 ◽  
Vol 490-495 ◽  
pp. 3840-3844
Author(s):  
W. Cheng ◽  
P. Han ◽  
F. Yu ◽  
L. Yu ◽  
L.H. Cheng ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Crystalline Quality ◽  
X Ray Diffraction ◽  
Crystalline Orientation ◽  
X Ray ◽  
Measurement Results ◽  
Different Temperatures ◽  
P Type ◽  
Sic Film ◽  
Sic Films

In this work, the Si layer is deposited on the SiC complex substrate which is composed of Si(111) substrate and 3C-SiC film grown on it. These Si and 3C–SiC films grown under different temperatures in a chemical vapor deposition system are analyzed. The crystalline orientation, the crystalline quality and the conduction type of the films are measured by X-ray diffraction, Raman scattering ,Scanning electron microscope, and 1150 °C is found the optimized temperature for the epitaxial growth of SiC film grown on the carbonized layer. Measurement results also show that the epitaxial layer is n-type 3C-SiC which has the same crystalline orientation with the Si (111) substrate. Si film grown on the SiC complex substrate under the temperature of 690 °C has the best crystalline quality. This film is composed of p-type monocrystal Si and has the same crystalline orientation with the substrate.

Status of Amorphous Silicon and Related Alloys Prepared by Photochemical Vapor Deposition

1986 ◽  
Vol 70 ◽  
Author(s):  
Makoto Konagai
Keyword(s):  
Current Status ◽  
List Type ◽  
Solar Cell Performance ◽  
Superlattice Structures ◽  
Si Films ◽  
P Type ◽  
Photochemical Vapor Deposition ◽  
Preparation Techniques ◽  
Sic Films

ABSTRACTA review is given of the current status of amorphous Si(a-Si) and related alloys prepared by photo-CVD. Preparation techniques and film quality of the following materials will be reviewed; •undoped a-Si films,•highly conductive n-type and p-type μc-Si films, a-SiGe films.•a-SiC films, superlattice structures.Finally, the present status of a-Si solar cell performance prepared by photo-CVD will be introduced and the merit of photo-CVD will be discussed.

Novel Carbon Source (1,3-Disilabutane) for the Deposition of P-Type a-SiC

2002 ◽  
Vol 715 ◽  
Author(s):  
Shuhei Yagi ◽  
Takashi Okabayashi ◽  
Katsuya Abe ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Carbon Source ◽  
Vapor Deposition ◽  
Energy Gap ◽  
Hydrogenated Amorphous Silicon ◽  
Type A ◽  
Optical Energy Gap ◽  
P Type ◽  
Photochemical Vapor Deposition ◽  
Hydrogenated Amorphous ◽  
Sic Films

AbstractWe proposed a new carbon source, 1,3-disilabutane (H3Si-CH2-SiH2-CH3:1,3-DSB), to grow hydrogenated amorphous silicon carbide (a-SiC:H) films by mercury-sensitized photochemical vapor deposition (photo-CVD). We described preliminary results of undoped and p-type a-SiC films deposited using 1,3-DSB. It was found that the optical energy gap of the films was changed even at very small 1,3-DSB/silane ratios of few percents. P-type doping was carried out by using diborane and we obtained the films with a darkconductivity of 1.3x10-4 S/cm at the optical bandgap of 2.1 eV. In addition, we applied this material for a p-layer of a p-i-n type a-Si based solar cell and we have achieved relatively high conversion efficiency of 9.55%.

Hot-wire chemical vapor deposition and characterization of p-type nanocrystalline SiC films and their use in Si heterojunction solar cells

2012 ◽  
Vol 520 (6) ◽  
pp. 2110-2114 ◽  
Author(s):  
Hsin-Yuan Mao ◽  
Dong-Sing Wuu ◽  
Bing-Rui Wu ◽  
Shih-Yung Lo ◽  
Hsin-Yu Hsieh ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Sic Films

p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum

2016 ◽  
Vol 858 ◽  
pp. 137-142 ◽  
Author(s):  
Marcin Zielinski ◽  
Roxana Arvinte ◽  
Thierry Chassagne ◽  
Adrien Michon ◽  
Marc Portail ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Process Conditions ◽  
Substrate Orientation ◽  
Al Content ◽  
Role Of Principal ◽  
Temperature And Pressure ◽  
P Type ◽  
Sic Films

Exhaustive experimental study of aluminum incorporation in epitaxial 4H-SiC and 3C‑SiC films grown by chemical vapor deposition (CVD) was performed. The influence of polytype and substrate orientation was verified. Role of principal process conditions (growth temperature and pressure, deposition rate, chemical environment) was investigated in details. Finally, the evolution of optical properties of resulting SiC films with Al content was examined.

A TEM Study of Cr Based Contacts to (0001) 6H-SiC

2000 ◽  
Vol 6 (S2) ◽  
pp. 1064-1065
Author(s):  
R.-J. Liu ◽  
M. J. Kim ◽  
R. W. Carpenter ◽  
L. M. Porter ◽  
L. P. Scheunemann ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Optoelectronic Devices ◽  
Wide Band ◽  
Electron Beam Evaporation ◽  
Rapid Thermal Anneal ◽  
Wide Band Gap ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
P Type ◽  
Sic Films

6H-SiC is a wide band-gap semiconductor. In recent years, a variety of high-power, -temperature, -speed and optoelectronic devices have been produced in SiC films. The search for metals which can form thermally stable, uniform ohmic contacts with SiC with low resistivity is still ongoing. In this study, Cr and CrBx (1<x<2) films were deposited by electron beam evaporation onto p-type, vicinal Si-terminated (0001) 6H-SiC surface. Both contacts exhibited rectifying behavior in the as-deposited condition. Ohmic-like behavior was observed for Cr/SiC system after annealing at 1000 °C for 240 seconds in a rapid thermal anneal furnace in an Ar atmosphere. It was also reported that ohmic behavior was observed for CrB2 /SiC system after annealing at 1100 °C for 2 minutes at a pressure of 5x10“7 Torr.2 The microstructure and chemistry of these two contact systems in both as-deposited and annealed conditions were investigated by transmission electron microscopy (TEM).

Characteristics of Porous 3C-SiC Thin Films Formed with Nitrogen Doping Concentrations

2010 ◽  
Vol 645-648 ◽  
pp. 391-394
Author(s):  
Kang San Kim ◽  
Gwiy Sang Chung
Keyword(s):  
Thin Films ◽  
Photo Luminescence ◽  
X Ray Diffraction ◽  
Average Pore ◽  
X Ray ◽  
Uv Led ◽  
N Doping ◽  
P Type ◽  
Sic Films

This paper describes the characteristics of porous 3C-SiC with in-situ N-doping concentrations. Polycrystalline (poly) 3C-SiC thin films were deposited on p-type Si (100) substrates by APCVD using hexamethyildisilane (HMDS: Si2(CH3)6). The porous 3C-SiC (pSiC) was achieved by anodized with 380 nm UV-LED. The characteristics of the N2 doped pSiC were evaluated using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and photo luminescence (PL). Average pore diameter is about 50 nm and etched area was increased with N2 doping rate. These results are attributed to decrease the crystallinity by N2 doping. The band gaps of poly 3C-SiC films and porous 3C-SiC films were 2.5 eV and 2.7 eV, respectively.

XPS characterization and photoelectrochemical behaviour of p-type 3C-SiC films on p-Si substrates for solar water splitting

2012 ◽  
Vol 45 (32) ◽  
pp. 325101 ◽  
Author(s):  
Quan-Bao Ma ◽  
Bernhard Kaiser ◽  
Jürgen Ziegler ◽  
Dominic Fertig ◽  
Wolfram Jaegermann
Keyword(s):  
Water Splitting ◽  
Solar Water ◽  
Si Substrates ◽  
Solar Water Splitting ◽  
Xps Characterization ◽  
P Type ◽  
Sic Films
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