Effect of Dopants on ZnO Mediated Photocatalysis of Dye Bearing Wastewater: A Review

2013 ◽  
Vol 757 ◽  
pp. 165-174 ◽  
Author(s):  
Parameswara Rao Potti ◽  
Vimal Chandra Srivastava
Keyword(s):  
Zinc Oxide ◽  
Surface Modification ◽  
Band Gap ◽  
Solar Surface ◽  
Wide Band ◽  
High Energy ◽  
Light Sources ◽  
Wide Band Gap ◽  
Degradation Of Dyes

This article provides the brief overview on effect of dopant on the performance of zinc oxide (ZnO) as photocatalysts for the degradation of dye wastewaters. ZnO itself is a semi conductor having wide band gap (3.37eV), thus requiring high energy to work as a photocatalyst. To decrease the band gap or to alter its requirement of high energy from light sources like UV to visible (solar), surface modification or doping of ZnO is necessary. This paper discusses how dopant modifies the characteristics of ZnO which helps in degradation of dyes in colored wastewaters.

Novel sputtering method to obtain wide band gap and low resistivity in as-deposited magnesium doped zinc oxide films

2019 ◽  
Vol 104 ◽  
pp. 104646 ◽  
Author(s):  
M. Loeza-Poot ◽  
R. Mis-Fernández ◽  
I. Rimmaudo ◽  
E. Camacho-Espinosa ◽  
J.L. Peña
Keyword(s):  
Zinc Oxide ◽  
Band Gap ◽  
Oxide Films ◽  
Wide Band ◽  
Wide Band Gap ◽  
Low Resistivity ◽  
Zinc Oxide Films

Solar Hydrogen Generation with Wide-Band-Gap Semiconductors: GaP(100) Photoelectrodes and Surface Modification

ChemPhysChem ◽  
2012 ◽  
Vol 13 (12) ◽  
pp. 3053-3060 ◽  
Author(s):  
Bernhard Kaiser ◽  
Dominic Fertig ◽  
Jürgen Ziegler ◽  
Joachim Klett ◽  
Sascha Hoch ◽  
...  
Keyword(s):  
Surface Modification ◽  
Band Gap ◽  
Hydrogen Generation ◽  
Wide Band ◽  
Wide Band Gap ◽  
Solar Hydrogen ◽  
Wide Band Gap Semiconductors

Defect-induced magnetism in undoped and Mn-doped wide band gap zinc oxide grown by aerosol spray pyrolysis

2014 ◽  
Vol 311 ◽  
pp. 14-26 ◽  
Author(s):  
D.E. Motaung ◽  
I. Kortidis ◽  
D. Papadaki ◽  
S.S. Nkosi ◽  
G.H. Mhlongo ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Wide Band ◽  
Wide Band Gap ◽  
Aerosol Spray ◽  
Mn Doped ◽  
Aerosol Spray Pyrolysis

Aluminum doped zinc oxide wide band-gap n-type optical window for μc-Si superstrate solar cell

Vacuum ◽  
2015 ◽  
Vol 120 ◽  
pp. 14-18 ◽  
Author(s):  
F. Khaled ◽  
A. Bouloufa ◽  
K. Djessas ◽  
R. Mahamdi ◽  
I. Bouchama
Keyword(s):  
Zinc Oxide ◽  
Solar Cell ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Optical Window ◽  
Aluminum Doped Zinc Oxide

Transport in high mobility amorphous wide band gap indium zinc oxide films

2005 ◽  
Vol 202 (9) ◽  
pp. R95-R97 ◽  
Author(s):  
R. Martins ◽  
P. Barquinha ◽  
A. Pimentel ◽  
L. Pereira ◽  
E. Fortunato
Keyword(s):  
Zinc Oxide ◽  
Band Gap ◽  
Oxide Films ◽  
High Mobility ◽  
Wide Band ◽  
Wide Band Gap ◽  
Zinc Oxide Films ◽  
Indium Zinc Oxide

scholarly journals Stabilization of wide band-gap p-type wurtzite MnTe thin films on amorphous substrates

2018 ◽  
Vol 6 (23) ◽  
pp. 6297-6304 ◽  
Author(s):  
Sebastian Siol ◽  
Yanbing Han ◽  
John Mangum ◽  
Philip Schulz ◽  
Aaron M. Holder ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Indium Zinc Oxide ◽  
Amorphous Substrates ◽  
Oxide Substrate ◽  
P Type

The wurtzite polymorph of MnTe with a wider band gap and moderate p-type doping is stabilized on an amorphous indium zinc oxide substrate.

scholarly journals Laser Assisted Flow Deposition: a New Method to Grow ZnO

2012 ◽  
Vol 18 (S5) ◽  
pp. 87-88 ◽  
Author(s):  
J. Rodrigues ◽  
M. R. N. Soares ◽  
A. J. S. Fernandes ◽  
T. Monteiro ◽  
F. M. Costa
Keyword(s):  
Zinc Oxide ◽  
Band Gap ◽  
Bulk Material ◽  
Wide Band ◽  
Modern Technology ◽  
New Method ◽  
Wide Band Gap ◽  
Fundamental Science ◽  
Technology Applications

Zinc oxide (ZnO) has been one of the most studied materials in the last decades. Either as bulk material, epilayers or nanostructures, this direct wide band gap semiconductor is known to possess great potential for fundamental science and modern technology applications.

Halide‐Modulated Functionality of Wide Band Gap Zinc Oxide Semiconductor Nanoparticle

2018 ◽  
Vol 3 (23) ◽  
pp. 6382-6393 ◽  
Author(s):  
Tuhin Kumar Maji ◽  
Prasenjit Kar ◽  
Harahari Mandal ◽  
Chinmoy Bhattacharya ◽  
Debjani Karmakar ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Band Gap ◽  
Wide Band ◽  
Oxide Semiconductor ◽  
Wide Band Gap ◽  
Semiconductor Nanoparticle

First Principles Study of the Electronic Structure of In1-xGaxN

2012 ◽  
Vol 502 ◽  
pp. 144-148
Author(s):  
Ling Ling Mi ◽  
Guo Zhong Zhao
Keyword(s):  
Electronic Structure ◽  
Energy Level ◽  
Band Gap ◽  
Valence Band ◽  
Density Functional ◽  
Wide Band ◽  
Blue Shift ◽  
High Energy ◽  
Wide Band Gap ◽  
High Energy Level

The In1-xGaxN electronic structure is calculated by First principle based on density functional theory. The energy band structures and density of state is calculated. It can be found that the hybridization of the Ga4s4p and N2p，In5s5p is stronger than that of N2p，In5s5p in the undoped system. And it leads to the valence band moving towards to low energy level and the conduction band moving to the high energy level. Correspondingly, we can find a larger band gap than that of undoped InN. In conclusion, the wide band gap lead to the blue shift and Moss-Burstein effect occurs near the top valence band.

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